Abstract: An apparatus of manufacturing a semiconductor device is provided. The apparatus including a controller configured to: expose a first region of a photoresist layer with a light pattern, expose a second region of the photoresist layer with at least in part the same light pattern, wherein the second region and the first region overlap in an overlap region of the photoresist layer, and wherein light pattern is configured to form, in exposing the first region, a first portion of individual markings in the overlap region of the photoresist layer, and to form, in exposing the second region, a second portion of individual markings in the overlap region of the photoresist layer. By measuring the composite pattern formed in photoresist by overlapping the first exposure with the second exposure, the relative position of the two exposures can be determined and controlled.

Abstract: Gate-all-around integrated circuit structures having adjacent island structures are described. For example, an integrated circuit structure includes a semiconductor island on a semiconductor substrate. A first vertical arrangement of horizontal nanowires is above a first fin protruding from the semiconductor substrate. A channel region of the first vertical arrangement of horizontal nanowires is electrically isolated from the fin. A second vertical arrangement of horizontal nanowires is above a second fin protruding from the semiconductor substrate. A channel region of the second vertical arrangement of horizontal nanowires is electrically isolated from the second fin. The semiconductor island is between the first vertical arrangement of horizontal nanowires and the second vertical arrangement of horizontal nanowires.

Abstract: In one embodiment, a wafer alignment system, comprises a radiation source to generate radiation, a radiation directing assembly to direct at least a portion of the radiation onto a surface of a wafer, the radiation having a polarization state, an optical analyzer to collect at least a portion of the radiation reflected from the wafer, the wafer including at least a first region having a first grating pattern oriented in a first direction and at least a second region having a second grating pattern oriented in a second direction, different from the first direction.

Abstract: In one embodiment, a wafer alignment system, comprises a radiation source to generate radiation, a radiation directing assembly to direct at least a portion of the radiation onto a surface of a wafer, the radiation having a polarization state, an optical analyzer to collect at least a portion of the radiation reflected from the wafer, the wafer including at least a first region having a first grating pattern oriented in a first direction and at least a second region having a second grating pattern oriented in a second direction, different from the first direction.