Patents by Inventor William T. Conner

William T. Conner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7257494
    Abstract: A method of monitoring a microelectronic manufacturing process includes the implementation of a monitoring sensor that is configured to operate in an inter-process mode. During an inter-process mode, a first valve is opened in order to initiate transfer of a processing substrate between at least one processing chamber and a transfer chamber. The monitoring sensor is programmed to monitor the interior of the at least one processing chamber only after the first valve is opened.
    Type: Grant
    Filed: May 11, 2005
    Date of Patent: August 14, 2007
    Assignee: Inficon, Inc.
    Inventors: William T. Conner, Craig Garvin, Steven J. Lakeman, Igor Tepermeister, Chenglong Yang
  • Patent number: 5958504
    Abstract: A process for the production of a hydroxyapatite coated article includes contacting a coating comprising hydroxyapatite with a recrystallization medium, pressurizing the recrystallization medium, heating the coated article under conditions of reduced oxygen activity at a temperature in the range of 100 to 350.degree. C. A process for the production of highly crystalline hydroxyapatite coated articles includes contacting a coating comprising hydroxyapatite with recrystallization medium containing hydroxyapatite particles, pressurizing the recrystallization medium, and heating the immersed coated article under conditions effective to crystallize hydroxyapatite.
    Type: Grant
    Filed: December 18, 1996
    Date of Patent: September 28, 1999
    Assignee: Etex Corporation
    Inventors: Dusuk Duke Lee, William T. Conner
  • Patent number: 5763092
    Abstract: A process for the production of a hydroxyapatite coated article includes contacting a coating comprising hydroxyapatite with a recrystallization medium, pressurizing the recrystallization medium, heating the coated article under conditions of reduced oxygen activity at a temperature in the range of 100.degree. to 350.degree. C. A process for the production of highly crystalline hydroxyapatite coated articles includes contacting a coating comprising hydroxyapatite with recrystallization medium containing hydroxyapatite particles, pressurizing the recrystallization medium, and heating the immersed coated article under conditions effective to crystallize hydroxyapatite.
    Type: Grant
    Filed: January 2, 1996
    Date of Patent: June 9, 1998
    Assignee: Etex Corporation
    Inventors: Dusuk Duke Lee, William T. Conner
  • Patent number: 5543019
    Abstract: The invention features a method of depositing a coating on a medical device. The method includes: a) placing the medical device in an evacuated chamber, b) introducing a noble gas into the chamber, c) providing at least one target in the chamber, spaced from the device, and d) sputter depositing a coating onto the device by applying power to the target so that the noble gas forms a plasma in the vicinity of the target and material is sputtered from the target by ion bombardment and deposited on the device.In another aspect, the invention features a medical device having a coating deposited by a plasma sputtering process. Preferably, the coating is a calcium containing compound.
    Type: Grant
    Filed: February 6, 1995
    Date of Patent: August 6, 1996
    Assignee: Etex Corporation
    Inventors: Dosuk D. Lee, William T. Conner
  • Patent number: 5450205
    Abstract: A new technique has been developed to measure etching or deposition rate uniformity in situ using a CCD camera which views the wafer during plasma processing. The technique records the temporal modulation of plasma emission or laser illumination reflected from the wafer; this modulation is caused by interferometry as thin films are etched or deposited. The measured etching rates compare very well with those determined by Helium-Neon laser interference. This technique is capable of measuring etching rates across 100-mm or larger wafers. It can resolve etch rate variations across a wafer or within a die. The invention can also be used to make endpoint determinations in etching operations as well as measuring the absolute thickness of thin films.
    Type: Grant
    Filed: May 28, 1993
    Date of Patent: September 12, 1995
    Assignee: Massachusetts Institute of Technology
    Inventors: Herbert H. Sawin, William T. Conner, Timothy J. Dalton, Emanuel M. Sachs