Patents by Inventor William T. Powers

William T. Powers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8081074
    Abstract: An apparatus for deterring removal of electrical wiring that is installed in a building includes a controller, and a wiring module responsive to the controller and forming a monitored circuit with installed electrical wiring by coupling to an end of the wiring located at a load distribution junction. The other end of the wiring is electrically coupled, and can be coupled with a controlled impedance, or with a protected asset. The apparatus is configured with control logic to issue an alert if the integrity of the monitored circuit has been compromised.
    Type: Grant
    Filed: September 11, 2008
    Date of Patent: December 20, 2011
    Inventors: Jack L. Marshall, John Allen Burnham, Rodney L. Weaver, Ronald E. Smith, William T. Powers
  • Publication number: 20090066526
    Abstract: An apparatus for deterring removal of electrical wiring that is installed in a building includes a controller, and a wiring module responsive to the controller and forming a monitored circuit with installed electrical wiring by coupling to an end of the wiring located at a load distribution junction. The other end of the wiring is electrically coupled, and can be coupled with a controlled impedance, or with a protected asset. The apparatus is configured with control logic to issue an alert if the integrity of the monitored circuit has been compromised.
    Type: Application
    Filed: September 11, 2008
    Publication date: March 12, 2009
    Inventors: Jack L. Marshall, John Allen Burnham, Rodney L. Weaver, Ronald E. Smith, William T. Powers
  • Patent number: 6240785
    Abstract: A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.
    Type: Grant
    Filed: December 10, 1996
    Date of Patent: June 5, 2001
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: John J. Chapman, Qamar A. Shams, William T. Powers
  • Patent number: 5955678
    Abstract: A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.
    Type: Grant
    Filed: December 18, 1997
    Date of Patent: September 21, 1999
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: John J. Chapman, Qamar A. Shams, William T. Powers