Abstract: Embodiments of the invention provide an image sensor that includes a barrier region for isolating devices. The image sensor comprises a substrate and an array of pixel cells formed on the substrate. Each pixel cell comprises a photo-conversion device. The array comprises a first pixel cell having a first configuration, a second pixel cell having a second configuration, and at least one barrier region formed between the first and second pixel cells for capturing and removing charge. The barrier region comprises a charge accumulation region of a particular conductivity type in a substrate electrically connected to a voltage source terminal. The charge accumulation region accumulates charge and prevents charge transference from a pixel cell or peripheral circuitry on one side of the barrier region to a pixel cell on another side of the barrier region.

Abstract: Embodiments of the invention provide an image sensor that includes a barrier region for isolating devices. The image sensor comprises a substrate and an array of pixel cells formed on the substrate. Each pixel cell comprises a photo-conversion device. The array comprises a first pixel cell having a first configuration, a second pixel cell having a second configuration, and at least one barrier region formed between the first and second pixel cells for capturing and removing charge. The barrier region comprises a charge accumulation region of a particular conductivity type in a substrate electrically connected to a voltage source terminal. The charge accumulation region accumulates charge and prevents charge transference from a pixel cell or peripheral circuitry on one side of the barrier region to a pixel cell on another side of the barrier region.

Abstract: Embodiments of the invention provide a barrier region for isolating devices of an image sensor. The barrier region comprises a charge accumulation region of a particular conductivity type in a substrate electrically connected to a voltage source terminal. The charge accumulation region is adjacent to at least one pixel cell of a pixel array. The charge accumulation region accumulates charge and prevents charge transference from a pixel cell or peripheral circuitry on one side of the barrier region to a pixel cell on another side of the barrier region.

Abstract: A thermally stable booster explosive and process for the manufacture of the explosive. The product explosive is 2,4,7,9-tetranitro-10H-benzo[4,5]furo[3,2-b]indole (TNBFI). A reactant/solvent such as n-methylpyrrolidone (NMP) or dimethyl formamide (DMF) is made slightly basic. The solution is heated to reduce the water content. The solution is cooled and hexanitrostilbene is added. The solution is heated to a predetermined temperature for a specific time period, cooled, and the product is collected by filtration.

Abstract: An improved process for synthesizing 4-amino-1,2,4-triazole. Hydrazine hydrate solution is mixed into ethyl formate, ethanol, and an acidic ion exchange resin in a condenser. The solution is held at 75 degrees Celsius until no more liquid exits the condenser. The solution is then heated to between 130 and 133 degrees Celsius and kept at this temperature long enough to remove water and ethanol and to complete the synthesis. The solution is then cooled to 60 degrees Celsius and filtered to remove the ion-exchange resin. The filtered liquid is then cooled to ambient temperature.

Abstract: A thermally stable booster explosive and process for the manufacture of the explosive. The product explosive is 2,4,7,9-tetranitro-10H-benzo[4,5]furo[3,2-b]indole (TNBFI). A reactant/solvent such as n-methylpyrrolidone (NMP) or dimethyl formamide (DMF) is made slightly basic. The solution is heated to reduce the water content. The solution is cooled and hexanitrostilbene is added. The solution is heated to a predetermined temperature for a specific time period, cooled, and the product is collected by filtration.

Abstract: Embodiments of the invention provide a barrier region for isolating devices of an image sensor. The barrier region comprises a charge accumulation region of a particular conductivity type in a substrate electrically connected to a voltage source terminal. The charge accumulation region is adjacent to at least one pixel cell of a pixel array. The charge accumulation region accumulates charge and prevents charge transference from a pixel cell or peripheral circuitry on one side of the barrier region to a pixel cell on another side of the barrier region.

Abstract: A process for the manufacture of ultra-fine-particle hexanitrostilbene (HNS). Hexanitrostilbene is mixed in n-methylpyrrolidone (NMP) and the solution is steam heated for approximately one hour. The solution is rapidly mixed with cold water by means of drawing it through an aspirator through which water is flowing. The produced slurry is captured in a receiver and then filtered through a 0.45-micron filter. The recovered HNS product is then freeze dried.