Abstract: Methods, apparatuses, and computer program products are provided where fluid, such as a blood sample, is entered into a microfluidic channel in a microchip where the microfluidic channel possesses a micro/nanopillar array for sorting molecules by size. When the fluid passes through the micro/nanopillar array it is separated into particles of interest or particles not of interest or both. When particles of interest are lit by a light source via a first waveguide in the microchip connecting the light source to the microfluidic channel, then lighted particles of interest can be detected by an optical detector via a second waveguide in the microchip connecting the optical detector to the microfluidic channel. The information from the optical detector can be analyzed further by connecting the microchip to a mobile computing device with its own processing abilities or abilities via the internet or cloud.

Abstract: Monolithic, lateral series photovoltaic and photodiode devices on an insulating substrate are provided. In one aspect, a method of forming a photovoltaic device includes: forming a photovoltaic stack on an insulating substrate that includes: a bottom contact layer disposed on the insulating substrate, a BSF layer disposed on the bottom contact layer, a junction layer disposed on the BSF layer, a window layer disposed on the junction layer, and a top contact layer disposed on the window layer; patterning the top contact layer, the window layer, the junction layer, the BSF layer and the bottom contact layer into individual device stacks; forming contact pads on patterned portions of the bottom/top contact layers in each of the device stacks; and forming interconnects in contact with the contact pads that serially connect the device stacks. A photovoltaic device is also provided.

Abstract: A semiconductor structure for optical power conversion and a method of forming the semiconductor structure are provided. In an aspect, the method may include removing a first portion of the semiconductor structure from a first region, wherein the semiconductor structure comprises a layered photovoltaic structure on a silicon-on-insulator structure. A second portion of the semiconductor structure may be removed from a second region, wherein the second region is located adjacent to the first region, and wherein an insulator layer of the silicon-on-insulator structure is exposed by the removed second portion. A passivation layer pattern may be formed over the semiconductor structure. Electrodes may be formed on portions of the surfaces of the semiconductor structure that are uncovered by the passivation layer.

Abstract: A fluorescence detection system is provided. The fluorescence detection system includes a light source adapted to emit excitation light; a sample unit in which a sample is disposed; a first optical fiber adapted to connect the light source to the sample unit; an avalanche photodiode array detector adapted to receive fluorescent light generated by the sample when the sample is irradiated with the excitation light; and a second optical fiber adapted to connect the sample unit to the avalanche photodiode array detector, wherein the second optical fiber has a numerical aperture of equal to or greater than about 0.15 and the second optical fiber is positioned such that a longitudinal axis of the second optical fiber is orthogonal to a longitudinal axis of the first optical fiber. A method for detecting fluorescence and a computer-implemented method for detecting fluorescence are also provided.

Abstract: In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plurality of semiconductor pillars is positioned near the first end of the trench and includes integrated light sources. A second plurality of semiconductor pillars is positioned near the second end of the trench and includes integrated photodetectors.

Abstract: Described herein are microfluidic devices and methods of detecting an analyte in a sample that includes flowing the sample though a microfluidic device, wherein the presence of the analyte is detected directly from the microfluidic device without the use of an external detector at an outlet of the microfluidic device. In a more specific aspect, detection is performed by incorporating functional nanopillars, such as detector nanopillars and/or light source nanopillars, into a microchannel of a microfluidic device.

Abstract: A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.

Abstract: A semiconductor structure includes a first optical waveguide and a second optical waveguide located on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate.

Abstract: A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.

Abstract: A semiconductor device used for fluorescent-based molecule detection and a method for manufacturing the same are provided. The semiconductor device has a fluid channel layer defining a fluid channel through which a sample stream flows. A target cell coupled with a fluorescent source is contained by the sample stream. The semiconductor device also has an excitation light source for generating excitation light that reaches the target cell coupled with the fluorescent source to generate fluorescent light. The semiconductor device also has a light filter layer for permitting the fluorescent light to pass through and to block the excitation light and a light detection layer for detecting the fluorescent light. The functional components of the device are highly integrated. Leakage of the excitation light and background noise into the light detection component can be minimized to improve the quality of detection.

Abstract: In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plurality of semiconductor pillars is positioned near the first end of the trench and includes integrated light sources. A second plurality of semiconductor pillars is positioned near the second end of the trench and includes integrated photodetectors.

Abstract: Described herein are microfluidic devices and methods of detecting an analyte in a sample that includes flowing the sample though a microfluidic device, wherein the presence of the analyte is detected directly from the microfluidic device without the use of an external detector at an outlet of the microfluidic device. In a more specific aspect, detection is performed by incorporating functional nanopillars, such as detector nanopillars and/or light source nanopillars, into a microchannel of a microfluidic device.

Abstract: After sequentially forming a first multilayer structure comprising a first set of semiconductor layers suitable for formation of a photodetector, an etch stop layer and a second multilayer structure comprising a second set of semiconductor layers suitable for formation of a light source over a substrate, the second multilayer structure is patterned to form a light source in a first region of the substrate. A first trench is then formed extending through the etch stop layer and the first multilayer structure to separate the first multilayer structure into a first part located underneath the light source and a second part that defines a photodetector located in a second region of the substrate. Next, an interlevel dielectric (ILD) layer is formed over the light source, the photodetector and the substrate. A second trench that defines a microfluidic channel is formed within the ILD layer and above the photodetector.

Abstract: Described herein are microfluidic devices and methods of detecting an analyte in a sample that includes flowing the sample though a microfluidic device, wherein the presence of the analyte is detected directly from the microfluidic device without the use of an external detector at an outlet of the microfluidic device. In a more specific aspect, detection is performed by incorporating functional nanopillars, such as detector nanopillars and/or light source nanopillars, into a microchannel of a microfluidic device.

Abstract: A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.

Abstract: A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.

Abstract: A semiconductor structure includes a first optical waveguide and a second optical waveguide located on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate.

Abstract: A semiconductor device used for fluorescent-based molecule detection and a method for manufacturing the same are provided. The semiconductor device has a fluid channel layer defining a fluid channel through which a sample stream flows. A target cell coupled with a fluorescent source is contained by the sample stream. The semiconductor device also has an excitation light source for generating excitation light that reaches the target cell coupled with the fluorescent source to generate fluorescent light. The semiconductor device also has a light filter layer for permitting the fluorescent light to pass through and to block the excitation light and a light detection layer for detecting the fluorescent light. The functional components of the device are highly integrated. Leakage of the excitation light and background noise into the light detection component can be minimized to improve the quality of detection.

Abstract: In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plurality of semiconductor pillars is positioned near the first end of the trench and includes integrated light sources. A second plurality of semiconductor pillars is positioned near the second end of the trench and includes integrated photodetectors.

Abstract: In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plurality of semiconductor pillars is positioned near the first end of the trench and includes integrated light sources. A second plurality of semiconductor pillars is positioned near the second end of the trench and includes integrated photodetectors.