Abstract: The present invention provides an optical switch. The switch includes a substrate and a first waveguide holding member. The switch also includes a second waveguide holding member disposed over the substrate and movable relative to the first waveguide holding member to provide a switching function. A movement guiding member is provided for guiding the movement of the second waveguide holding member. A registration element is disposed at the movement guiding member for positioning the second waveguide holding member at a selected location relative to the first waveguide holding member. The selected location is one that provides alignment between a selected waveguide of the first waveguide holding member and a selected waveguide of the second waveguide holding member.

Abstract: In an improved method for growing an oxide layer on a silicon surface of a semiconductor body, the semiconductor body is first provided with a silicon surface. A first oxide layer portion is then grown over the silicon surface in a first thermal oxidation process at a temperature of less than about 1000.degree. C. The semiconductor device is then annealed in a nonoxidizing ambient at a temperature above about 1000.degree. C., and finally a second oxide layer portion is then grown over the first oxide layer portion in a second thermal oxidation process to complete the growth of the oxide layer. The silicon surface may be of either polycrystalline or monocrystalline material. This method avoids both the dopant outdiffusion problems associated with present high-temperature oxidation processes and the stress-related irregularities associated with known low-temperature oxidation processes.

Abstract: In fabricating a PROM cell, an electrical isolation mechanism (44 and 32) is formed in a semiconductive body to separate islands of an upper zone (36) of first type conductivity (N) in the body. A semiconductor is introduced into one of the islands to produce a region (48) of opposite type conductivity (P) that forms a PN junction with adjacent semiconductive material of the island. Ions are implanted to convert a surface layer (60) of the region into a highly resistive amorphous form which is irreversibly switchable to a low resistance state. A path of first type conductivity extending from the PN junction through another of the islands to its upper surface is created in the body to complete the basic cell.

Abstract: A magnetic structure for the propagation of magnetic bubbles at elevated velocity. A magnetic bubble layer is grown on a [110] face of a substrate, the lattice misfit being between -6.times.10.sup.-3 and -2.times.10.sup.-3, and the magnetic layer having a composition on the basis of europium-iron garnet and a damping parameter .ltoreq.3.times.10.sup.-7 Oe.sup.2 sec/rad.