Abstract: A technique for making acicular, branched, conductive dendrites, and a technique for using the dendrites to form a conductive compressible pad-on-pad connector are provided. To form the dendrites, a substrate is provided on which dendrites are grown, preferably on a metal film. The dendrites are then removed from the substrate, preferably by etching metal from the substrate. The so formed dendrites are incorporated into a compressible dielectric material, which then forms a compressible pad-on-pad connector between two conducting elements, such as connector pads on electrical devices, e.g. an I/C chip mounted on a substrate, such as a chip carrier.

Abstract: A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer includes a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer.

Abstract: A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer comprises a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer.

Abstract: A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer comprises a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer.

Abstract: A technique for making acicular, branched, conductive dendrites, and a technique for using the dendrites to form a conductive compressible pad-on-pad connector are provided. To form the dendrites, a substrate is provided on which dendrites are grown, preferably on a metal film. The dendrites are then removed from the substrate, preferably by etching metal from the substrate. The so formed dendrites are incorporated into a compressible dielectric material, which then forms a compressible pad-on-pad connector between two conducting elements, such as connector pads on electrical devices, e.g. an I/C chip mounted on a substrate, such as a chip carrier.

Abstract: A technique for making acicular, branched, conductive dendrites, and a technique for using the dendrites to form a conductive compressible pad-on-pad connector are provided. To form the dendrites, a substrate is provided on which dendrites are grown, preferably on a metal film. The dendrites are then removed from the substrate, preferably by etching metal from the substrate. The so formed dendrites are incorporated into a compressible dielectric material, which then forms a compressible pad-on-pad connector between two conducting elements, such as connector pads on electrical devices, e.g. an I/C chip mounted on a substrate, such as a chip carrier.