Abstract: A method of estimating a nitrogen site carbon concentration, in a first epitaxial layer made of carbon-doped gallium nitride of an electronic component, including steps of: estimating an electric capacitance of a stack interposed between the first layer and a first electrode of the component; heating the component; measuring an offset of a threshold voltage of the component; and deducing therefrom a nitrogen site carbon surface concentration in the first layer.

Abstract: A method of characterizing a field-effect transistor, including: a step of application, to the transistor gate, of a single voltage ramp; and a step of interpretation both of gate capacitance variations and of drain current variations of the transistor.

Abstract: A method for determining a CET mapping characterizing the capture and emission time of traps in a transistor for a given stress voltage and a given temperature, called an optimal CET mapping, this determination being made from an experimental measurement of the time course of the change in the threshold voltage V_TH for the same stress voltage and the same temperature and from a distribution function of the traps, the distribution function may be defined by N_par parameters. More particularly, the method implements a genetic algorithm whose parameters are regularly updated in order to optimize the computation time while decreasing the risk of reaching a local minimum in the determination of the optimal CET mapping.

Abstract: A method of characterizing a field-effect transistor, including: a step of application, to the transistor gate, of a single voltage ramp; and a step of interpretation both of gate capacitance variations and of drain current variations of the transistor.

Abstract: A method of estimating a nitrogen site carbon concentration, in a first epitaxial layer made of carbon-doped gallium nitride of an electronic component, including steps of: estimating an electric capacitance of a stack interposed between the first layer and a first electrode of the component; heating the component; measuring an offset of a threshold voltage of the component; and deducing therefrom a nitrogen site carbon surface concentration in the first layer.

Abstract: The invention relates to a characterization device for a power diode including: first and second power supply nodes; a power supply (including a first voltage source connected to the first node; a second voltage source; a first resistor connected in series between the second voltage source and said second node; and a controlled switch for selectively connecting the second node to a potential lower than a first potential); and a voltage clipping circuit (including a third voltage source; a second resistor and a first diode connected in series between the third voltage source and said second node; and a measurement terminal, connected to an intermediate node between the second resistor and the first diode).

Abstract: The invention concerns an optoelectronic semiconductor structure (100) including a semiconductor substrate (110) including a first face (111), a nucleation layer (120) and a nanowire (160) in contact with the nucleation layer. The nucleation layer (120) covers a portion of the first face (111) which is called the “nucleation” face, and where the portion (114) of the first face (111) not covered by the nucleation layer (120) is called the “free” portion. The structure also includes a conducting layer (141) in contact with the free portion (114) of the substrate (110), where the said conducting layer is also in contact with the nanowire over the perimeter of the nanowire (160). The invention also concerns a method of manufacture of such a structure (100).