Abstract: A semiconductor power device including a base plate, a ring frame disposed over the base plate, a semiconductor power die disposed on the base plate and surrounded by the ring frame, an input lead by way the semiconductor power die receives an input signal, wherein the input lead is disposed over a first portion of the ring frame, and an output lead by way an output signal generated by the semiconductor power die is sent to another device, wherein the output lead is disposed over a second portion of the ring frame. The ring frame may be comprised of a relatively high thermal conductivity material, such as beryllium-oxide (Be), silicon-carbide (SiC), diamond, aluminum nitride (AlN), or others. The ring frame produces at least one more heat path between the active region of the semiconductor power die and the base plate so as to reduce the effective thermal impedance.

Abstract: A semiconductor power device including a base plate, a ring frame disposed over the base plate, a semiconductor power die disposed on the base plate and surrounded by the ring frame, an input lead by way the semiconductor power die receives an input signal, wherein the input lead is disposed over a first portion of the ring frame, and an output lead by way an output signal generated by the semiconductor power die is sent to another device, wherein the output lead is disposed over a second portion of the ring frame. The ring frame may be comprised of a relatively high thermal conductivity material, such as beryllium-oxide (Be), silicon-carbide (SiC), diamond, aluminum nitride (AlN), or others. The ring frame produces at least one more heat path between the active region of the semiconductor power die and the base plate so as to reduce the effective thermal impedance.

Abstract: A semiconductor power device including a base plate, a semiconductor power die disposed on the base plate, an input lead by way the semiconductor power die receives an input signal, an output lead by way an output signal generated by the semiconductor power die is sent to another device, and at least one thermal substrate disposed on the base plate adjacent to the semiconductor power die, wherein a set of electrodes of the semiconductor power die are thermally and electrically coupled to a metallization layer on the thermal substrate. The thermal substrate may be comprised of a relatively high thermal conductivity material, such as beryllium-oxide (Be), silicon-carbide (SiC), diamond, aluminum nitride (AlN), or others. The thermal substrate produces at least one more heat path between the active region of the semiconductor power die and the base plate so as to reduce the effective thermal impedance.

Abstract: A high power, low loss RF strip transmission line coupling structure is provided. It includes a multi-layer printed circuit board (PCB), a top cover and a bottom cover. The top and bottom covers provide the ground reference for the strip transmission line coupling structure. The PCB is fastened to the top and bottom covers and is used for: creating the center conductor of an air dielectric strip transmission line and edge coupler; providing a means to transition from microstrip to air dielectric strip transmission line; supporting the air dielectric strip transmission line; routing of other signals; and passing ground to the top and bottom covers. To create an air dielectric strip transmission line, the PCB material is adequately removed to effectively form a rectangular bar of dielectric and metal layers. This rectangular bar is plated along the edges where the PCB material was removed to ensure that the top and bottom PCB metal layers are at the same potential.

Abstract: A high power, low loss RF strip transmission line coupling structure is provided. It includes a multi-layer printed circuit board (PCB), a top cover and a bottom cover. The top and bottom covers provide the ground reference for the strip transmission line coupling structure. The PCB is fastened to the top and bottom covers and is used for: creating the center conductor of an air dielectric strip transmission line and edge coupler; providing a means to transition from microstrip to air dielectric strip transmission line; supporting the air dielectric strip transmission line; routing of other signals; and passing ground to the top and bottom covers. To create an air dielectric strip transmission line, the PCB material is adequately removed to effectively form a rectangular bar of dielectric and metal layers. This rectangular bar is plated along the edges where the PCB material was removed to ensure that the top and bottom PCB metal layers are at the same potential.

Abstract: A circuit and method for modulating the gate bias voltage of a FET transistor in an RF amplifier disclosed. This circuit is used to dynamically control the gate bias of the auxiliary transistor in a Doherty amplifier. The gate bias voltage is modulated so that it tracks the input signal amplitude. Dynamically modulating the gate bias of the auxiliary transistor in the Doherty amplifier improves the peak power and linearity, while maintaining good efficiency.