Abstract: A plasma enhancing baffle plate is employed in conjunction with the anode of an RIE system to provide uniform silicon etching. The baffle plate is conductively coupled to and provided in relatively close proximity to the anode to form a constricted chamber region between anode and baffle plate. With the constricted chamber open to the RIE chamber through aperture means in the baffle plate the total surface area of the anode is increased, such that when the system is biased to operate in an RIE mode an increase in the generation of neutral etching species is effected. Various aperture arrangements may be employed to provide different patterns of neutral etching species generation, in accordance with the peculiar characteristics of the system employed.

Abstract: A method and apparatus for high speed electroplating of steel rods in a bright acid copper bath. The rods bearing a nickel strike coating are supported on racks in vertical tiers, the racks making electrical connections exclusively from the ends of each rod to a cathode bar. The acid copper bath solution is subjected to constant air agitation and constantly recirculated to a heat exchanger for maintenance of a preselected temperature.

Abstract: In an ion implantation apparatus, a beam defining member such as the acceleration plate is constructed such that the member is maintained at a temperature above the condensation point of the vapor emanating from the source of charged particles, thereby preventing the vapor from condensing on the member and providing a self-cleaning effect.

Abstract: In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target.