Patents by Inventor William W. Troutman
William W. Troutman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8987815Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: GrantFiled: January 16, 2014Date of Patent: March 24, 2015Assignee: Enpirion, Inc.Inventors: Ashraf W. Lotfi, Douglas D. Lopata, William W. Troutman, Tanya Nigam
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Publication number: 20140131795Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: ApplicationFiled: January 16, 2014Publication date: May 15, 2014Applicant: Enpirion, Inc.Inventors: Ashraf W. Lotfi, Douglas D. Lopata, William W. Troutman, Tanya Nigam
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Patent number: 8633540Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: GrantFiled: August 15, 2012Date of Patent: January 21, 2014Assignee: Enpirion, Inc.Inventors: Ashraf W. Lotfi, William W. Troutman, Douglas Dean Lopata, Tanya Nigam
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Publication number: 20120306011Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: ApplicationFiled: August 15, 2012Publication date: December 6, 2012Applicant: ENPIRION, INC.Inventors: Ashraf W. Lotfi, William W. Troutman, Douglas Dean Lopata, Tanya Nigam
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Patent number: 8253195Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: GrantFiled: August 28, 2009Date of Patent: August 28, 2012Assignee: Enpirion, Inc.Inventors: Ashraf W. Lotfi, William W. Troutman, Douglas Dean Lopata, Tanya Nigam
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Patent number: 8253196Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: GrantFiled: August 28, 2009Date of Patent: August 28, 2012Assignee: Enpirion, Inc.Inventors: Ashraf W. Lotfi, William W. Troutman, Douglas Dean Lopata, Tanya Nigam
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Patent number: 8253197Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: GrantFiled: August 28, 2009Date of Patent: August 28, 2012Assignee: Enpirion, Inc.Inventors: Ashraf W. Lotfi, William W. Troutman, Douglas Dean Lopata, Tanya Nigam
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Patent number: 8212317Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: GrantFiled: August 28, 2009Date of Patent: July 3, 2012Assignee: Enpirion, Inc.Inventors: Ashraf W. Lotfi, William W. Troutman, Douglas Dean Lopata, Tanya Nigam
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Patent number: 8212316Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: GrantFiled: August 28, 2009Date of Patent: July 3, 2012Assignee: Enpirion, Inc.Inventors: Ashraf W. Lotfi, William W. Troutman, Douglas Dean Lopata, Tanya Nigam
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Patent number: 8212315Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: GrantFiled: August 28, 2009Date of Patent: July 3, 2012Assignee: Enpirion, Inc.Inventors: Ashraf W. Lotfi, William W. Troutman, Douglas Dean Lopata, Tanya Nigam
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Publication number: 20110049621Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: ApplicationFiled: August 28, 2009Publication date: March 3, 2011Applicant: Enpirion Incorporated, A Delaware CorporationInventors: Ashraf W. Lotfi, William W. Troutman, Douglas Dean Lopata, Tanya Nigam
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Publication number: 20100052050Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: ApplicationFiled: August 28, 2009Publication date: March 4, 2010Applicant: Enpirion, IncorporatedInventors: Ashraf W. Lotfi, William W. Troutman, Douglas Dean Lopata, Tanya Nigam
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Publication number: 20100052049Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: ApplicationFiled: August 28, 2009Publication date: March 4, 2010Applicant: Enpirion, Incorporated, A Delaware CorporationInventors: Ashraf W. Lotfi, William W. Troutman, Douglas Dean Lopata, Tanya Nigam
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Publication number: 20100052052Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: ApplicationFiled: August 28, 2009Publication date: March 4, 2010Applicant: Enpirion, IncorporatedInventors: Ashraf W. Lotfi, William W. Troutman, Douglas Dean Lopata, Tanya Nigam
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Publication number: 20100052051Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: ApplicationFiled: August 28, 2009Publication date: March 4, 2010Applicant: Enpirion, Incorporated, A Delaware CorporationInventors: Ashraf W. Lotfi, William W. Troutman, Douglas Dean Lopata, Tanya Nigam
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Publication number: 20100044789Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.Type: ApplicationFiled: August 28, 2009Publication date: February 25, 2010Applicants: Enpirion, IncorporatedInventors: Ashraf W. Lotfi, William W. Troutman, Douglas Dean Lopata, Tanya Nigam