Abstract: A transimpedance amplifier includes a first amplifier, a first MOS resistor device and a first voltage divider circuit. The source terminal of the first MOS resistor device is coupled to the first amplifier inverting input. The voltage divider circuit is coupled between the first amplifier output and the non-inverting input. The output of the first voltage divider is coupled to the first MOS resistor drain terminal. A second amplifier, second MOS resistor device and a second voltage divider circuit is also provided. The output of the second amplifier is coupled to the gate terminal of the first MOS resistor device. The gate terminal of the second MOS resistor device is coupled to the second amplifier output. The drain terminal of the second MOS resistor device is coupled to the second amplifier non-inverting input.

Abstract: A light to frequency converter includes a temperature coefficient generator, a programmable gain amplifier, and a current controlled oscillator having at least one photodiode configured to receive incident light, the at least one photodiode configured for generating a photodiode control current. The temperature coefficient generator outputs a bandgap reference voltage with temperature coefficient compensation (VBG_TC) in response to a bandgap reference voltage (VBG). The programmable gain amplifier is responsive to the bandgap reference voltage with temperature coefficient compensation (VBG_TC) for outputting an oscillator reference voltage (VREF).

Abstract: An integrated circuit for generating a bandgap reference voltage (VBG) includes a first circuit and a second circuit. The first circuit includes an op-amp for equalizing emitter currents of a first bandgap transistor and a second bandgap transistor. The second circuit trims out error in at least one emitter current to achieve a desired frequency tolerance. The second circuit includes at least a single transistor digital to analog converter (DAC).

Abstract: An integrated circuit adapted to output a bandgap reference voltage with temperature coefficient compensation (VBG_TC) includes a first circuit responsive to a bandgap reference voltage (VBG) for generating a temperature stable reference current. A second circuit applies the temperature stable reference current through a current mirror to a current summing junction. A third circuit sums the temperature stable reference current against a current proportional to absolute temperature (IPTAT). Lastly, a fourth circuit converts the summed current into the bandgap reference voltage with temperature coefficient compensation (VBG_TC).

Abstract: Impulse noise suppression upstream of digital processing circuitry contains a sample and hold mechanism which samples the input signal and stores a plurality of sequential sample values respectively representative of the amplitude of the input signal at successive sample times. The contents of the sample and hold mechanism are compared with an input signal sample to determine whether or not the there are abnormal amplitude variations which potentially constitute impulse noise. In one embodiment the comparison is referenced to the average magnitude of the input signal. In another embodiment the input signal is coupled to a cascaded arrangement of sample and hold circuits which sample and store a plurality of sequential sample values. The time differentials between successive sampling times are such there is little likelihood of occurrences of impulse noise spikes during any two successive sample intervals.

Abstract: Integrated circuits with vertical isolated trenches are radiation hardened by providing vertical gate segments, preferably, of doped polycrystalline silicon, in the trenches and connected at the bottom of the trenches to a region of the same conductivity type. The surface devices may be complementary and the vertical gates may also be complementarily doped. A method of fabrication is described for a single crystal wafer, as well as SOI.

Abstract: Integrated circuits with vertical isolated trenches are radiation hardened by providing vertical gate segments, preferably, of doped polycrystalline silicon, in the trenches and connected at the bottom of the trenches to a region of the same conductivity type. The surface devices may be complementary and the vertical gates may also be complementarily doped. A method of fabrication is described for a single crystal wafer, as well as SOI.

Abstract: A transimpedance processor includes a feedback circuit for generating a voltage as a function of the input background level and precharging the capacitor of the input integrator to a negative of the generated voltage in a precharge cycle.