Abstract: A three-axis magnetic sensing device included on a single chip. An example three-axis magnetic sensing device includes first and second sensing components that sense magnetic fields along two orthogonal axes planar to a surface of a substrate and a third sensing component that senses a magnetic field along an axis out of plane of the surface of the substrate. The third sensing component includes a carbon-based material. In one example, the first and second sensing components are anisotropic magnetoresistive sensors. In another example, the carbon-based material includes carbon nanotubes and the third sensing component includes a needle attached to the carbon-based material and electrodes that make contact with the carbon-based material.

Abstract: An enhanced giant magnetoresistive device, and a method of manufacturing the same. The enhanced giant magnetoresistive (GMR) device includes a substrate over which is formed a seed layer. A buffer-oxide layer is formed over the seed layer. Formed over the buffer-oxide layer is a GMR stack. The GMR stack is formed as a three layer sandwich in which the two outside layers are fabricated from ferromagnetic materials, and the inner layer or spacer layer is formed from non-magnetic, conducting materials. The GMR stack may also take the form of spin valves, and/or other GMR stacks. The buffer-oxide layer may be various thicknesses and provide desirable texturing or non-waviness, both of which may allow for a thin spacer layer. Further, the buffer-oxide layer may be configured to prevent Néel-type-orange-peel coupling from dominating RKKY coupling in the GMR device, which may allow for a thin spacer layer.

Abstract: A magnetic-sensing apparatus and methods of making and using thereof are disclosed. The sensing apparatus may have one or more magneto-resistive-sensing elements, one or more reorientation elements for adjusting the magneto-resistive-sensing elements, and semiconductor circuitry having driver circuitry for controlling the reorientation elements. The magneto-resistive-sensing elements, reorientation elements and/or semiconductor circuitry may be disposed in single package and/or monolithically formed on a single chip. Alternatively, some of the semiconductor circuitry may be monolithically formed on a first chip with the magneto-resistive-sensing elements, while a second portion of the semiconductor circuitry may be formed on a second chip. The first and second chips may be placed in close proximity and electrically connected together. Alternatively the chips may have no intentional electrical interaction.

Abstract: At least one magnetic field sensing device and an RF transceiver are integrated in a discrete, single-chip package. Rather than requiring at least two separate chips to wirelessly transmit the device output, an integrated, single chip solution can be used. The single chip integration of the at least one magnetic field sensing device and the RF transceiver can reduce the physical space required and, therefore, allow such devices to be smaller, lighter, and possibly more portable.

Abstract: A magnetic-sensing apparatus and method of making and using thereof is provided. The sensing apparatus may be fabricated from semiconductor circuitry and a magneto-resistive sensor. A dielectric may be disposed between the semiconductor circuitry and the magneto-resistive sensor. In one embodiment, the semiconductor circuitry and magneto-resistive sensor are formed into a single package or, alternatively, monolithically formed into a single chip. In another embodiment, some of the semiconductor circuitry may be monolithically formed on a first chip with the magneto-resistive sensor, while other portions of the semiconductor circuitry may be formed on a second chip. As such, the first and second chips may be placed in close proximity and electrically connected together or alternatively have no intentional electrical interaction.

Abstract: At least one magnetic field sensing device and GPS receiver integrated in a discrete, single-chip package, and a method of manufacture for the same. Rather than requiring at least two separate chips to be used to realize GPS positioning and compassing capabilities in a single device, an integrated, single chip solution can be used. A single chip integration of a GPS receiver and at least one magnetic field sensing device can reduce the physical space required to provide positioning and electronic compassing capabilities in a single device, and therefore allow such devices to be smaller, lighter, and possibly more portable.

Abstract: A magnetic field sensing device can be realized by using a magnetic sensor in electronic compassing as well as switching. A magnet can be brought in close proximity to the magnetic sensor within an electronic compass to generate a signal that a portable information device has been closed. This signal can be input to a processor or other circuitry to initiate a response to the portable information device being closed. When the magnet is moved out of close proximity to the magnetic sensor, the magnetic sensor can be used in the electronic compass. Thus, a magnetic sensor can serve two functions, namely compassing and switching, reducing the need for separate sensors to perform both functions.

Abstract: An integrated three-dimensional magnetic or any field sensing device and a method to fabricate an integrated three-dimensional magnetic sensing device is presented. An integrated three-dimensional magnetic sensing device comprises an apparatus that defines at least a first surface area and at least one sloped surface which is sloped with respect to the first surface area. Two magnetic sensing units could be arranged on the first surface area to provide first and second orthogonal sensing directions, and a third magnetic sensing unit could be arranged on the at least one sloped surface to provide sensing in at least a third sensing direction which is orthogonal to the first and second orthogonal sensing directions. Bias could be applied to the third magnetic sensing unit to cancel a component of the magnetic field sensed by the third magnetic sensing unit so that the third magnetic sensor unit only provides sensing in the third direction.

Abstract: An MRAM device comprising an array of MRAM elements, with each element having an MRAM bit influenced by a magnetic field from a current flowing through a conductor, also includes a magnetic keeper formed adjacent the conductor to advantageously alter the magnetic field. The magnetic keeper alters the magnetic field by concentrating the field within the keeper thereby reducing the extent in which fringe field exists, thus allowing the MRAM elements to be formed closer to increase the areal density of the MRAM device. Increase in magnetic field flux due to the magnetic keeper allows operation of the MRAM device with lowered power. Soft magnetic materials such as nickel iron, nickel iron cobalt, or cobalt iron may be used to form the magnetic keeper.

Abstract: An integrated three-dimensional magnetic or any field sensing device and a method to fabricate an integrated three-dimensional magnetic sensing device is presented. An integrated three-dimensional magnetic sensing device comprises an apparatus that defines at least a first surface area and at least one sloped surface which is sloped with respect to the first surface area. Two magnetic sensing units could be arranged on the first surface area to provide first and second orthogonal sensing directions, and a third magnetic sensing unit could be arranged on the at least one sloped surface to provide sensing in at least a third sensing direction which is orthogonal to the first and second orthogonal sensing directions. Bias could be applied to the third magnetic sensing unit to cancel a component of the magnetic field sensed by the third magnetic sensing unit so that the third magnetic sensor unit only provides sensing in the third direction.

Abstract: The invention relates to methods and apparatus that allow data to be stored in a magnetic memory cell, such as a giant magneto-resistance (GMR) cell, of a magnetoresistive random access memory (MRAM). Embodiments of the invention advantageously wind a word line around a magnetic memory cell to increase the magnetic field induced by the word line. The word line can be formed by connecting a segment in a first layer to a segment in a second layer with the memory cell disposed between the first layer and the second layer. Advantageously, embodiments of the invention can include relatively narrow magnetic memory cells, and/or bit lines, have relatively high write selectivity, and can use relatively low word currents to store data. In one MRAM, current is passed through a word line by allowing current to flow through a corresponding word row line and a corresponding word column line.

Abstract: A method for incorporating magnetic materials in a semiconductor manufacturing process includes manufacturing a semiconductor device including interlayers and dielectric layers, depositing a magnetic layer above a semiconductor device and forming metallized contacts for connecting interlayers of the semiconductor device. With the method of the present invention, the deposition of the magnetic material is integrated with the semiconductor manufacturing process.

Abstract: The invention relates to methods and apparatus that allow data to be stored in a magnetic memory cell, such as a giant magneto-resistance (GMR) cell, of a magnetoresistive random access memory (MRAM). Embodiments of the invention advantageously wind a word line around a magnetic memory cell to increase the magnetic field induced by the word line. The word line can be formed by connecting a segment in a first layer to a segment in a second layer with the memory cell disposed between the first layer and the second layer. Advantageously, embodiments of the invention can include relatively narrow magnetic memory cells, and/or bit lines, have relatively high write selectivity, and can use relatively low word currents to store data. In one MRAM, current is passed through a word line by allowing current to flow through a corresponding word row line and a corresponding word column line.