Patents by Inventor William Worthington Crew, Jr.

William Worthington Crew, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Contact integration for reduced interface and series contact resistance
    Patent number: 9484251
    Abstract: Methods of lightly implanting platinum, iridium, osmium, erbium, ytterbium, dysprosium, and gadolinium in semiconductor material in shallow depths by plasma-immersion ion implantation (PIII) and/or pulsed PIII are provided herein. Methods include depositing a liner layer prior to masking and implanting features to form n-type and p-type semiconductors and implanting materials through the liner layer. Methods are suitable for integration schemes involving fabrication of fin-type field effect transistors (FinFETs).
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: November 1, 2016
    Assignee: Lam Research Corporation
    Inventors: Paul Raymond Besser, William Worthington Crew, Jr., Sanjay Gopinath