Abstract: The invention provides a semiconductor cleaning step, which comprises the following steps: providing a chamber with a bottom surface and a sidewall, the chamber contains a heater on the bottom surface, performing a first deposition step to leave a residual layer on the sidewall of the chamber, performing a carbon deposition step to form a carbon layer on at least the surface of the heater, and performing a plasma cleaning step to simultaneously remove the residual layer on the sidewall of the chamber and the carbon layer on the bottom surface.

Abstract: The invention provides a semiconductor cleaning step, which comprises the following steps: providing a chamber with a bottom surface and a sidewall, the chamber contains a heater on the bottom surface, performing a first deposition step to leave a residual layer on the sidewall of the chamber, performing a carbon deposition step to form a carbon layer on at least the surface of the heater, and performing a plasma cleaning step to simultaneously remove the residual layer on the sidewall of the chamber and the carbon layer on the bottom surface.

Abstract: A metering distribution assembly and a coating system. The metering distribution assembly includes a volumetric cavity pump that comprises a flow passage plate having flow passages, a nozzle plate with a flow passage, a gear fixing plate attached between the flow passage plate and the nozzle plate, and a gear set located in an aperture of the fixing plate. The gear set has a fluid inlet and a fluid outlet on a side of the gear set opposite to the fluid inlet. The fluid inlet is in fluid communication with the flow passages of the flow passage plate, and the fluid outlet is in fluid communication with the flow passage of the nozzle plate. A part of the flow passages of the flow passage plate, which is in direct fluid communication with the fluid inlet, extends in a direction parallel to a rotation axis of the gear set.