Patents by Inventor Willie J. Lawton

Willie J. Lawton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabrication of low dielectric constant porous metal silicate films
    Patent number: 6699797
    Abstract: The present provides a method for forming a porous metal silicate dielectric layer having a dielectric constant of less than 2.0. The porous metal silicate dielectric formed by embodiments of the present invention is suitable for integration into the microelectric device manufacturing process. By carefully controlling the amount and type of surfactant used, the pore size and structure of the dielectric layer can be predetermined.
    Type: Grant
    Filed: December 17, 2002
    Date of Patent: March 2, 2004
    Assignee: Intel Corporation
    Inventors: Michael A. Morris, Kevin M. Ryan, Justin D. Holmes, Willie J. Lawton