Abstract: A residue-free plasma etch of high temperature aluminum copper metallization is provided by the use of a single plasma etcher. The metallization layer is covered by a protective oxide layer. This structure is then placed in the single etcher and a vacuum is established. The protective oxide layer is then etched and without breaking the vacuum or removing the structure from the etcher the metal layer is also etched. This results in the etched surface being residue-free.

Abstract: A method is described for providing a conductive pillar in a via between multiple layers of conductors on planar electronic structures such as integrated circuits while at the same time exposing other large area contact regions such as a bonding pad. A first conductor layer is formed on the device substrate, etched to delineate the bonding pad and the first level interconnects, and covered with a differentially etchable intermediate conductive material which is delineated to form the conductive pillar. A dielectric planarizing layer is applied so as to have a smooth surface contour and a lower thickness above the conductive pillar than over the first level interconnects or the bonding pad. The planarizing dielectric is desirably a negative acting radiation sensitive material such as a polyimide. A mask is used to render the portions of this dielectric planarizing layer above the bonding pad soluble so that it may be dissolved away while leaving the remainder undisturbed.

Abstract: A process is disclosed for fabricating semiconductor devices, and especially for fabricating semiconductor devices having multiple levels of metallization separated by polyimide or other organic materials. The process avoids the sputter etching and redeposition of the lower metal layer during reactive ion etching of openings through the organic layer. Sequential layers overlying the first layer of metallization include a layer of oxide, a layer of organic material, and a second layer of oxide. The second layer of oxide functions as a hard mask for patterning the organic material. The first layer of oxide acts as an etch stop and protective layer to prevent attack of the underlying metal during reactive ion etching of the organic layer. The first layer of oxide is of limited areal extent to avoid subsequent problems with the organic layer.

Abstract: A holder and method for controlling and uniformly maintaining the temperature of work pieces when the work pieces are acted upon by a plasma in a plasma reactor apparatus. Support means which hold the work pieces so as to expose them to the reactive plasma also position metallic plate members which are capable of being heated to an elevated temperature by the plasma when in electrical contact with an electrode of the plasma reactor apparatus. The metallic plate members are all electrically shorted together, but are insulated from the support means. A temperature sensitive switch connects the metallic plate members to an electrode of the plasma apparatus. Work pieces to be acted upon by the plasma are placed in proximity to the metal plate members. In the presence of a plasma and when shorted to the apparatus electrode, the metallic plate members are rapidly heated and heat is conducted to the work pieces to heat them uniformly.