Patents by Inventor Willman Tsai

Willman Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
    Patent number: 10084058
    Abstract: Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
    Type: Grant
    Filed: July 25, 2016
    Date of Patent: September 25, 2018
    Assignee: Intel Corporation
    Inventors: Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey, Titash Rakshit, Willman Tsai
  • QUANTUM WELL MOSFET CHANNELS HAVING LATTICE MISMATCH WITH METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS
    Publication number: 20160372574
    Abstract: Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
    Type: Application
    Filed: July 25, 2016
    Publication date: December 22, 2016
    Inventors: Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey, Titash Rakshit, Willman Tsai
  • Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
    Patent number: 9443936
    Abstract: Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
    Type: Grant
    Filed: April 25, 2013
    Date of Patent: September 13, 2016
    Assignee: Intel Corporation
    Inventors: Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey, Titash Rakshit, Willman Tsai
  • QUANTUM WELL MOSFET CHANNELS HAVING LATTICE MISMATCH WITH METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS
    Publication number: 20130234113
    Abstract: Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
    Type: Application
    Filed: April 25, 2013
    Publication date: September 12, 2013
    Inventors: Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey, Titash Rakshit, Willman Tsai
  • Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains
    Patent number: 8501508
    Abstract: Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: August 6, 2013
    Assignee: Intel Corporation
    Inventors: Prashant Majhi, Mantu Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey, Titash Rakshit, Willman Tsai
  • QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS
    Publication number: 20120231596
    Abstract: Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
    Type: Application
    Filed: May 23, 2012
    Publication date: September 13, 2012
    Inventors: Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey, Titash Rakshit, Willman Tsai
  • Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
    Patent number: 8258498
    Abstract: Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
    Type: Grant
    Filed: January 31, 2011
    Date of Patent: September 4, 2012
    Assignee: Intel Corporation
    Inventors: Prashant Majhi, Mantu Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey, Titash Rakshit, Willman Tsai
  • QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS
    Publication number: 20110121266
    Abstract: Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
    Type: Application
    Filed: January 31, 2011
    Publication date: May 26, 2011
    Inventors: Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey, Titash Rakshit, Willman Tsai
  • Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
    Patent number: 7947971
    Abstract: Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
    Type: Grant
    Filed: April 8, 2010
    Date of Patent: May 24, 2011
    Assignee: Intel Corporation
    Inventors: Prashant Majhi, Mantu Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey, Titash Rakshit, Willman Tsai
  • QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS
    Publication number: 20100193771
    Abstract: Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
    Type: Application
    Filed: April 8, 2010
    Publication date: August 5, 2010
    Inventors: Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey, Titash Rakshit, Willman Tsai
  • Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
    Patent number: 7759142
    Abstract: Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: July 20, 2010
    Assignee: Intel Corporation
    Inventors: Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey, Titash Rakshit, Willman Tsai
  • QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS
    Publication number: 20100163847
    Abstract: Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
    Type: Application
    Filed: December 31, 2008
    Publication date: July 1, 2010
    Inventors: Prashant Majhi, Mantu K. Hudait, Jack T. Kavalieros, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey, Titash Rakshit, Willman Tsai