Abstract: A solid source chemical vapor deposition apparatus and a CVD method for fabricating semiconductor devices are disclosed. In accordance with the process for fabricating semiconductor devices, a CVD reactor chamber having a solid reactant source apparatus coupled thereto is provided. The reactant source apparatus includes a container which can be heated in a controllable manner and which has a gas diffuser located in the container. The container is provided with gas input and output which are located so that a carrier gas can be passed through the gas diffuser and through a finely divided solid reactant source material which is positioned over the gas diffuser. The carrier gas together with any vapor derived from the solid reactant source material is conveyed from the outlet of the reactant source apparatus to the CVD reactor chamber.

Abstract: A quick-release multiple gas injection pipe connector fitting for removable attachment to a gas reaction chamber having a plurality of gas injection passages. The fitting permits a number of gas inlet lines to be removed from or attached to a reaction chamber fixture in one operation without a separate removal or attachment step for each gas line. The fitting also facilitates a process where the reaction gases are preferably mixed only at the reaction site and not before.

Abstract: A heat exchanger apparatus having two sleeves which fit together to seal a sinuous heat exchange fluid channel between them where the channel is open along its length prior to assembly. The sleeves may be made removable to permit easy cleaning of the heat exchange fluid channel. The heat exchange fluid channel may thus be directly cleaned along its entire length in contrast to conventional heat exchangers employing tubes, where the tube interior can be accessed only from the ends. In one embodiment, the channel has a rectangular cross-section to enhance the heat exchange capability of the apparatus.