Patents by Inventor Wilson Hasan Widjaja

Wilson Hasan Widjaja has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Passivation scheme for oxide vertical cavity surface-emitting laser
    Patent number: 6862309
    Abstract: A method for forming an oxide VCSEL (vertical cavity surface-emitting laser) includes forming a VCSEL structure, forming an oxidation cavity partially through the VCSEL structure, oxidizing a layer in the VCSEL structure, forming a first passivation layer over a surface of the oxidation cavity, and forming a second passivation layer over the first passivation layer. An oxide VCSEL structure includes a bottom mirror region, an active region atop the bottom mirror region, a top mirror region atop the active region, an oxidation cavity partially through the top mirror region, a first passivation layer covering a surface of the oxidation cavity, and a second passivation layer covering the first passivation layer. In both the method and the structure, the first passivation layer can be made of silicon nitride (SiN) while the second passivation layer can be made of silicon oxynitride (SiON).
    Type: Grant
    Filed: February 6, 2003
    Date of Patent: March 1, 2005
    Assignee: Agilent Technologies, Inc.
    Inventors: Gregory N. DeBrabander, An-Nien Cheng, Suning Xie, Wilson Hasan Widjaja
  • Passivation scheme for oxide vertical cavity surface-emitting laser
    Publication number: 20040156410
    Abstract: A method for forming an oxide VCSEL (vertical cavity surface-emitting laser) includes forming a VCSEL structure, forming an oxidation cavity partially through the VCSEL structure, oxidizing a layer in the VCSEL structure, forming a first passivation layer over a surface of the oxidation cavity, and forming a second passivation layer over the first passivation layer. An oxide VCSEL structure includes a bottom mirror region, an active region atop the bottom mirror region, a top mirror region atop the active region, an oxidation cavity partially through the top mirror region, a first passivation layer covering a surface of the oxidation cavity, and a second passivation layer covering the first passivation layer. In both the method and the structure, the first passivation layer can be made of silicon nitride (SiN) while the second passivation layer can be made of silicon oxynitride (SiON).
    Type: Application
    Filed: February 6, 2003
    Publication date: August 12, 2004
    Inventors: Gregory N. DeBrabander, An-Nien Cheng, Suning Xie, Wilson Hasan Widjaja