Abstract: The disclosed technology generally relates to superconducting devices, and more particularly to superconducting rings, qubits comprising the superconducting rings and methods of coherently coupling flux states of the superconducting rings. In one aspect, a qubit includes a superconducting ring around a hole. The qubit additionally includes an electric field generator adapted for applying an electric field in a plane of the superconducting ring over at least part of the superconducting ring, and a magnetic field generator adapted for applying a magnetic field component orthogonal to the plane of the superconducting ring such that the magnetic field component at least crosses the hole of the ring.

Abstract: The disclosed technology generally relates to superconducting devices, and more particularly to superconducting rings, qubits comprising the superconducting rings and methods of coherently coupling flux states of the superconducting rings. In one aspect, a qubit includes a superconducting ring around a hole. The qubit additionally includes an electric field generator adapted for applying an electric field in a plane of the superconducting ring over at least part of the superconducting ring, and a magnetic field generator adapted for applying a magnetic field component orthogonal to the plane of the superconducting ring such that the magnetic field component at least crosses the hole of the ring.

Abstract: The present disclosure relates to semiconductor devices with gate-controlled energy filtering. One example embodiment includes a semiconductor device. The semiconductor device includes a first electrode, a second electrode, and a channel therebetween. The semiconductor device also includes a first interference structure located in the channel. Further, the semiconductor device includes a first gate for controlling a voltage over the first interference structure. The first interference structure is formed to induce a local mini-band structure that can be shifted by the voltage controlled by the first gate, such that the first local mini-band structure is: (1) aligned with a band structure in the semiconductor device to turn the semiconductor device on; and (2) misaligned with the band structure in the semiconductor device to turn the semiconductor device off.

Abstract: The present disclosure relates to semiconductor devices with gate-controlled energy filtering. One example embodiment includes a semiconductor device. The semiconductor device includes a first electrode, a second electrode, and a channel therebetween. The semiconductor device also includes a first interference structure located in the channel. Further, the semiconductor device includes a first gate for controlling a voltage over the first interference structure.

Abstract: A Field Effect Transistor (FET) semiconductor device comprising at least one nanostructure, comprises at least a uniformly doped beam-shaped nanostructure having two major surfaces, a gate electrode provided at either major surface of the nanostructure, and an insulating layer between each of the major surfaces of the nanostructure and the gate electrodes to form a double gate nanostructure pinch-off FET. It is an advantage of such FET that pinch-off voltage and current of the FET can be independently tuned.

Abstract: In order to design on-chip interconnect structures in a flexible way, a CAD approach is advocated in three dimensions, describing high frequency effects such as current redistribution due to the skin-effect or eddy currents and the occurrence of slow-wave modes. The electromagnetic environment is described by a scalar electric potential and a magnetic vector potential. These potentials are not uniquely defined, and in order to obtain a consistent discretization scheme, a gauge-transformation field is introduced. The displacement current is taken into account to describe current redistribution and a small-signal analysis solution scheme is proposed based upon existing techniques for static fields in semiconductors. In addition methods and apparatus for refining the mesh used for numerical analysis is described.

Abstract: A method of operating a quantum system comprising computational elements, including an insulated ring of superconductive material, and semi-closed rings used as an interface between the computational elements and the external world, is disclosed. In one aspect, the method comprises providing an electrical signal, e.g. a current, in an input ring magnetically coupled to a computational element, which generates a magnetic field in the computational element and sensing the change in the current and/or voltage of an output element magnetically coupled to the computational element. The electrical input signal can be an AC signal or a DC signal. The computational element is electromagnetically coupled with other adjacent computational elements and/or with the interface elements. The corresponding magnetic flux between the computational elements and/or the interface elements acts as an information carrier. Ferromagnetic cores are used to improve the magnetic coupling between adjacent elements.

Abstract: A novel nanostructure device operating in Junction Field Effect Transistor (JFET) mode is provided that avoids the majority of the carriers that interact with the interface (e.g. surface roughness, high-k scattering).

Abstract: A novel nanostructure device operating in Junction Field Effect Transistor (JFET) mode is provided that avoids the majority of the carriers that interact with the interface (e.g. surface roughness, high-k scattering).

Abstract: A method of forming a quantum system comprising computational elements, consisting of an insulated ring of superconductive material, and semi-closed rings, which are used as an interface or input/output facility between the quantum bit and the external world, is disclosed. Faraday induction is used to provide electromagnetic coupling between adjacent computational elements and between the computational elements with interface elements of the quantum system. Therefore the corresponding magnetic flux acts as an information carrier. Ferromagnetic cores are used to improve the magnetic coupling between adjacent elements of the quantum system.

Abstract: A method of operating a quantum system comprising computational elements, including an insulated ring of superconductive material, and semi-closed rings used as an interface between the computational elements and the external world, is disclosed. In one aspect, the method comprises providing an electrical signal, e.g. a current, in an input ring magnetically coupled to a computational element, which generates a magnetic field in the computational element and sensing the change in the current and/or voltage of an output element magnetically coupled to the computational element. The electrical input signal can be an AC signal or a DC signal. The computational element is electromagnetically coupled with other adjacent computational elements and/or with the interface elements. The corresponding magnetic flux between the computational elements and/or the interface elements acts as an information carrier. Ferromagnetic cores are used to improve the magnetic coupling between adjacent elements.

Abstract: In order to design on-chip interconnect structures in a flexible way, a CAD approach is advocated in three dimensions, describing high frequency effects such as current redistribution due to the skin-effect or eddy currents and the occurrence of slow-wave modes. The electromagnetic environment is described by a scalar electric potential and a magnetic vector potential. These potentials are not uniquely defined, and in order to obtain a consistent discretization scheme, a gauge-transformation field is introduced. The displacement current is taken into account to describe current redistribution and a small-signal analysis solution scheme is proposed based upon existing techniques for static fields in semiconductors. In addition methods and apparatus for refining the mesh used for numerical analysis is described.

Abstract: In order to design on-chip interconnect structures in a flexible way, a CAD approach is advocated in three dimensions, describing high frequency effects such as current redistribution due to the skin-effect or eddy currents and the occurrence of slow-wave modes. The electromagnetic environment is described by a scalar electric potential and a magnetic vector potential. These potentials are not uniquely defined, and in order to obtain a consistent discretization scheme, a gauge-transformation field is introduced. The displacement current is taken into account to describe current redistribution and a small-signal analysis solution scheme is proposed based upon existing techniques for static fields in semiconductors. In addition methods and apparatus for refining the mesh used for numerical analysis is described.

Abstract: A method of forming a quantum system comprising computational elements, consisting of an insulated ring of superconductive material, and semi-closed rings, which are used as an interface or input/output facility between the quantum bit and the external world, is disclosed. Faraday induction is used to provide electromagnetic coupling between adjacent computational elements and between the computational elements with interface elements of the quantum system. Therefore the corresponding magnetic flux acts as an information carrier. Ferromagnetic cores are used to improve the magnetic coupling between adjacent elements of the quantum system.

Abstract: In order to design on-chip interconnect structures in a flexible way, a CAD approach is advocated in three dimensions, describing high frequency effects such as current redistribution due to the skin-effect or eddy currents and the occurrence of slow-wave modes. The electromagnetic environment is described by a scalar electric potential and a magnetic vector potential. These potentials are not uniquely defined, and in order to obtain a consistent discretization scheme, a gauge-transformation field is introduced. The displacement current is taken into account to describe current redistribution and a small-signal analysis solution scheme is proposed based upon existing techniques for static fields in semiconductors. In addition methods and apparatus for refining the mesh used for numerical analysis is described.

Abstract: The present invention discloses a quantum system comprising computational elements, consisting of an insulated ring of superconductive material, and semi-closed rings, which are used as an interface or input/output facility between the quantum bit and the external world. Faraday induction is used to provide electromagnetic coupling between adjacent computational elements and between the computational elements with interface elements of the quantum system. Therefore the corresponding magnetic flux acts as an information carrier. Ferromagnetic cores are used to improve the magnetic coupling between adjacent elements of the quantum system.

Abstract: The present invention discloses a quantum system comprising computational elements, consisting of an insulated ring of superconductive material, and semi-closed rings, which are used as an interface or input/output facility between the quantum bit and the external world. Faraday induction is used to provide electromagnetic coupling between adjacent computational elements and between the computational elements with interface elements of the quantum system. Therefore the corresponding magnetic flux acts as an information carrier. Ferromagnetic cores are used to improve the magnetic coupling between adjacent elements of the quantum system.

Abstract: In order to design on-chip interconnect structures in a flexible way, a CAD approach is advocated in three dimensions, describing high frequency effects such as current redistribution due to the skin-effect or eddy currents and the occurrence of slow-wave modes. The electromagnetic environment is described by a scalar electric potential and a magnetic vector potential. These potentials are not uniquely defined, and in order to obtain a consistent discretization scheme, a gauge-transformation field is introduced. The displacement current is taken into account to describe current redistribution and a small-signal analysis solution scheme is proposed based upon existing techniques for static fields in semiconductors. In addition methods and apparatus for refining the mesh used for numerical analysis is described.

Abstract: In order to design on-chip interconnect structures in a flexible way, a CAD approach is advocated in three dimensions, describing high frequency effects such as current redistribution due to the skin-effect or eddy currents and the occurrence of slow-wave modes. The electromagnetic environment is described by a scalar electric potential and a magnetic vector potential. These potentials are not uniquely defined, and in order to obtain a consistent discretization scheme, a gauge-transformation field is introduced. The displacement current is taken into account to describe current redistribution and a small-signal analysis solution scheme is proposed based upon existing techniques for static fields in semiconductors. In addition methods and apparatus for refining the mesh used for numerical analysis is described.

Abstract: A method, i.e. the so-called Cube-Assembling Method (CAM), is disclosed for locally refining a n-dimensional mesh in a predetermined domain, wherein the mesh comprises nodes and n−1 planes connecting these nodes thereby dividing said domain in n-dimensional first elements. By applying a mesh on a domain, the domain can be introduced in a computer aided design environment for optimization purposes. Concerning the mesh, one of the issues is to perform the optimization using the appropriate amount of nodes at the appropriate location The method of the present invention succeeds in adding or removing nodes locally. The assembling is done over the elements, being e.g. squares or cubes or hypercubes dependent of the dimension of the mesh. Like the finite-box method, the CAM method is easy to program, even in higher dimensions. However, the CAM method does not suffer from the restriction that only one line may terminate at the side of a box.