Abstract: A lithographic apparatus wherein a dipole illumination mode used for printing a line pattern, is arranged to provide quadrupole illumination. Radiation emanating from the two additional poles and passing the mask pattern without being affected by diffraction is prevented from reaching the wafer by a radiation blocking aperture disposed in the projection system. Astigmatism aberration due to lens heating associated with the dipole illumination mode is reduced by lens heating associated with the additional poles of the quadrupole illumination mode.

Abstract: The invention provides a height detecting apparatus for a lithographic apparatus. The height mapping apparatus includes a height mapping unit for providing at least one height map of a top surface of an object to be placed in a radiation beam of the lithographic apparatus, the object to be clamped by a clamping force applied thereto on a support constructed to support the object. The height mapping apparatus also includes a control unit for controlling the mapping unit to provide the at least one height map of the object relative to at least two different clamping pressure levels.

Abstract: A lithographic apparatus operable in a substrate exposing configuration to expose a substrate with a pattern of radiation and a radiation beam inspection configuration in which the pattern of radiation that would be exposed on the substrate if the lithographic apparatus was in the substrate exposing configuration is inspected by a radiation beam inspection device. In the radiation beam inspecting configuration, the operation of the lithographic apparatus is modified in order to minimize the difference between the pattern of radiation exposed on the substrate and the required pattern of radiation to be exposed on the substrate.

Abstract: A lithographic apparatus includes a pattern support to support a patterning device, the patterning device to impart a radiation beam with a pattern in its cross-section to form a patterned radiation beam. The lithographic apparatus further includes a position measurement system to perform a position measurement of a reference mark of the patterning device. Also, the lithographic apparatus includes a contamination monitor to estimate a contamination of at least one of the patterning device and the pattern support by performing first and second position measurements of at least one reference mark of the patterning device and estimating a contamination from a position difference between the first and second position measurements.

Abstract: A lithographic projection apparatus includes a measurement system for measuring changes in projection system aberrations with time, and a predictive control system for predicting variation of projection system aberrations with time on the basis of model parameters and for generating a control signal for compensating a time-varying property of the apparatus, such as the OVL values (X-Y adjustment) and the FOC values (Z adjustment) of a lens of the projection system for example. An inline model identification system is provided for estimating model parameter errors on the basis of projection system aberration values provided by the predictive control system and measured projection system aberration values provided by the measurement system, and an updating system utilizes the model parameter errors for updating the model parameters of the predictive control system in order to maintain the time-varying property within acceptable performance criteria.

Abstract: A lithographic apparatus is provided that uses an array of individually controllable elements to pattern the beam of radiation. The critical dimension uniformity of a substrate patterned using the apparatus is improved by adjusting the pattern data provided to the array of individually controllable elements to compensate for process variation.

Abstract: A manufacturing method is utilized in lithographic projection apparatus in order to enable all aberrations to be compensated for but with those aberrations that are of most significance to the particular application (the particular pattern, illumination mode, etc.) being given precedence over aberrations that are of lesser significance in relation to that particular application. The method uses a substrate having a target portion for receiving an image, a mask for applying a pattern in accordance with a required patterning application, and a projection system to project a selected beam of radiation onto the mask to produce a specific required patterned beam providing an image of the pattern on the target portion.

Abstract: A method is provided for modifying an image of a pattern during a lithographic imaging process, where the pattern is arranged on a mask for imaging by a projection system on a surface, and the image is an image formed from the pattern by the projection system. In this method the imaging quality of the projection system is described by selected imaging quality parameters, and the image is adjustable by image adjustment parameters of the projection system. The method comprises the steps of determining an ideal image of the pattern, determining a simulated distorted image of the pattern based on the selected imaging quality parameters; determining a deviation between the simulated distorted image and the ideal image, and adapting the image adjustment parameters during the imaging process to minimize the deviation between the simulated distorted image and the ideal image on the basis of the selected imaging quality parameters.

Abstract: A rework station and a metrology device(s) are incorporated into a lithographic processing cell so that a faulty substrate can be reworked directly and reprocessed without, for example, an overhead involved in changing masks, etc.

Abstract: A system, apparatus, and method for improving CD uniformity in lithographic system is presented herein. The system includes an exposure apparatus configured to expose substrates, a track apparatus that is operatively coupled to the exposure apparatus and a plurality of processing modules and apparatus. The system also includes a measuring device configured to measure attributes of the exposed and processed substrates and to assess whether the exposed and processed substrate attributes are uniform based on pre-specified substrate profile information. The system further includes a module configured to adaptively calculate corrective exposure data based on the measured attributes upon determining that said attributes are not uniform. The corrective exposure data is configured to correct for non-uniformities in the substrates by regulating the exposure dosage of the exposure apparatus.

Abstract: A system, apparatus, and method for improving CD uniformity in lithographic system is presented herein. The system includes an exposure apparatus configured to expose substrates, a track apparatus that is operatively coupled to the exposure apparatus and a plurality of processing modules and apparatus. The system also includes a measuring device configured to measure attributes of the exposed and processed substrates and to assess whether the exposed and processed substrate attributes are uniform based on pre-specified substrate profile information. The system further includes a module configured to adaptively calculate corrective exposure data based on the measured attributes upon determining that said attributes are not uniform. The corrective exposure data is configured to correct for non-uniformities in the substrates by regulating the exposure dosage of the exposure apparatus.

Abstract: A system, apparatus, and method for thermally controlling lithographic chemical processes is disclosed herein. The thermal control system includes a multi-zone thermal sensing unit containing a plurality of thermal sensor elements. These thermal elements are configured to detect the temperature of a plurality of pre-defined zones on the substrates. The system also includes a multi-zone thermal adjustment unit that contains a plurality of thermal coupler elements, which are configured to adjust the temperature of the pre-defined zones. The system further includes a thermal controller unit, operatively and communicatively coupled to the multi-zone thermal sensing unit and the multi-zone thermal adjustment unit.

Abstract: A method of scheduling one or more maintenance actions in at least a part of a substrate processing system is provided. According to an embodiment, the method includes determining a gap in the flow of substrates in a part of the substrate processing system and scheduling one or more maintenance actions to be performed in another part of the substrate processing during a period associated with the gap. An increase of productivity of substrate processing can be achieved through a reduction in downtime in a substrate processing system by appropriate scheduling of maintenance actions.