Abstract: An extreme ultraviolet (EUV) lithography mask is provided. The EUV lithography mask includes a reflective layer and an absorptive layer deposited over the reflective layer. The absorptive layer is patterned so as to define absorptive regions of the mask for absorbing EUV radiation and reflective regions of the mask for reflecting EUV radiation. The EUV lithography mask further includes a protective capping layer which is deposited over both the absorptive regions and the reflective regions of the mask.

Abstract: A photomask is provide. The photomask includes a substrate having a multi-layer stack disposed over the substrate. The multilayer stack has alternating first second and third layers disposed over each other, wherein the first, second and third layers are composed of first, second and third materials, respectively, and wherein at least the second layer is formed through an atomic layer deposition process. A capping layer is disposed over the multilayer stack; and an absorber layer disposed over the capping layer. A method for evaluating materials, unit processes, and process sequences for manufacturing a photomask is also provided.

Abstract: An extreme ultraviolet (EUV) lithography mask is provided. The EUV lithography mask includes a reflective layer and an absorptive layer deposited over the reflective layer. The absorptive layer is patterned so as to define absorptive regions of the mask for absorbing EUV radiation and reflective regions of the mask for reflecting EUV radiation. The EUV lithography mask further includes a protective capping layer which is deposited over both the absorptive regions and the reflective regions of the mask.

Abstract: A photomask is provide. The photomask includes a substrate having a multi-layer stack disposed over the substrate. The multilayer stack has alternating first second and third layers disposed over each other, wherein the first, second and third layers are composed of first, second and third materials, respectively, and wherein at least the second layer is formed through an atomic layer deposition process. A capping layer is disposed over the multilayer stack; and an absorber layer disposed over the capping layer. A method for evaluating materials, unit processes, and process sequences for manufacturing a photomask is also provided.