Patents by Inventor Win-Yi Hsieh

Win-Yi Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating contact plug
    Patent number: 6043148
    Abstract: A method of fabricating a metal plug. On a semiconductor substrate comprising a MOS device, a dielectric layer, and a via hole penetrating though the dielectric layer, a conformal titanium layer is formed on the dielectric layer and the via hole. A low temperature annealing is formed in a nitrogen environment, so that a surface of the titanium layer is transformed into a first thin titanium nitride layer. A conformal second titanium nitride layer is formed on the first thin titanium nitride layer by using collimator sputtering. A metal layer is formed and etched back on the second titanium nitride layer to form a metal plug.
    Type: Grant
    Filed: April 16, 1998
    Date of Patent: March 28, 2000
    Assignee: United Microelectronics Corp.
    Inventors: Yuan-Ching Peng, Lih-Juann Chen, Yu-Ru Yang, Win-Yi Hsieh, Yong-Fen Hsieh