Abstract: Implementations are presented herein that include an antenna switch that includes a plurality of ports. A bandstop filter is coupled to at least one of the plurality of ports of the antenna switch and the bandstop filter is configured to attenuate a disturbing frequency. A transistor is configured to receive a control signal and to switch on the bandstop filter responsive to the control signal.

Abstract: A semiconductor device includes a semiconductor substrate having a first main surface in which a recess is formed. Further, the semiconductor device includes an electrical interconnect structure which is arranged at a bottom of the recess. A semiconductor chip is located in the recess. The semiconductor chip includes a plurality of chip electrodes facing the electrical interconnect structure. Further, a plurality of electrically conducting elements is arranged in the electrical interconnect structure and electrically connected to the plurality of chip electrodes.

Abstract: An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.

Abstract: A circuit includes a switching element with a first terminal, a second terminal and a control terminal. The circuit also includes an impedance network coupled between the control terminal and a switching node. The circuit also includes a first accelerating element coupled between the control terminal and a first node. The first node is different from the switching node. The circuit is configured to temporarily activate the first accelerating element when a switching state of the switching element is to be changed.

Abstract: In accordance with an embodiment, a circuit includes a magnetic transformer having a first winding coupled between a first signal node and a second signal node, and a second winding coupled between a first reference node and a current measurement node. A phase shift network is coupled between the second node and a voltage measurement node, and the circuit is configured to indicate an impedance matching condition based on an amplitude difference and a phase difference between the voltage measurement node and the current measurement node.

Abstract: An antenna tuning circuit is provided. The antenna tuning circuit includes an antenna, an inductor and a variable capacitance. The antenna includes a first terminal, which serves as a feed terminal, and a second terminal, which is separate from the first terminal. The inductor and the variable capacitance are coupled to the second terminal, to tune the antenna.

Abstract: In accordance with an embodiment, a system has an audio amplifier configured to be coupled to a speaker coil port via a parallel resonant circuit, and a radio frequency (RF) amplifier configured to transmit a RF signal at a first RF transmission frequency. The speaker coil port is configured to be coupled to a speaker coil, and the parallel resonant circuit has a resonance frequency of about the first RF transmission frequency.

Abstract: In accordance with an embodiment, a phase detector circuit includes a plurality of cascaded RF stages that each has a first RF amplifier and a second RF amplifier. The first RF amplifiers are cascaded with first RF amplifiers of successive RF stages, and the second RF amplifiers are cascaded with second RF amplifiers of successive RF stages. The phase detector further includes a first mixer having a first input coupled to an output of a first RF amplifier of a first RF stage and a second input coupled to an output of a second RF amplifier of the first RF stage, and a second mixer having a first input coupled to an output of a second RF amplifier of a second RF stage and a second input coupled to an output of a first RF amplifier of the second RF stage.

Abstract: In accordance with an embodiment, a switchable capacitance circuit includes a plurality of capacitance-switch cells that each has a first semiconductor switching circuit and a capacitance circuit having a first terminal coupled to the first semiconductor switching circuit. A resistance of the first semiconductor switching circuit of a first switch-capacitance cell of the plurality of capacitance-switch cells is within a first tolerance of a resistance of the first semiconductor switching circuit of a second capacitance-switch cell of the plurality of capacitance-switch cells, and a capacitance of the capacitance circuit of the first capacitance-switch cell is within a second tolerance of a capacitance of the capacitance circuit of the second capacitance-switch cell.

Abstract: A semiconductor device includes a semiconductor substrate having a first main surface in which a recess is formed. Further, the semiconductor device includes an electrical interconnect structure which is arranged at a bottom of the recess. A semiconductor chip is located in the recess. The semiconductor chip includes a plurality of chip electrodes facing the electrical interconnect structure. Further, a plurality of electrically conducting elements is arranged in the electrical interconnect structure and electrically connected to the plurality of chip electrodes.

Abstract: A DC power supply circuit comprises an output configured to provide a power supply signal to an RF element for generating an RF output signal. Furthermore, the DC power supply circuit comprises an input configured to receive the RF output signal. The DC power supply circuit is configured to generate the DC power supply signal based on the received RF output signal.

Abstract: An impedance matching network comprises a first and a second signal terminal and a reference potential terminal. The network further comprises a first shunt branch between the first signal terminal and the reference potential terminal, the first shunt branch comprising a variable inductive element and a first capacitive element. The impedance matching network also comprises a second shunt branch between the second signal terminal and the reference potential terminal and comprising a second capacitive element. A series branch between the first signal terminal and the second signal terminal comprises a third capacitive element. Optionally, the first, second, and/or third capacitive element may be implemented as a variable capacitive element. The variable capacitive element comprises a plurality of transistors, wherein a combination of off-capacitances Coff of the transistors provide an overall capacitance of the variable capacitive element as a function of at least two independent transistor control signals.

Abstract: A DC power supply circuit comprises an output configured to provide a power supply signal to an RF element for generating an RF output signal. Furthermore, the DC power supply circuit comprises an input configured to receive the RF output signal. The DC power supply circuit is configured to generate the DC power supply signal based on the received RF output signal.

Abstract: In accordance with an embodiment, a system has an audio amplifier configured to be coupled to a speaker coil port via a parallel resonant circuit, and a radio frequency (RF) amplifier configured to transmit a RF signal at a first RF transmission frequency. The speaker coil port is configured to be coupled to a speaker coil, and the parallel resonant circuit has a resonance frequency of about the first RF transmission frequency.

Abstract: An RF switch includes a switchable RF transistor. The switchable RF transistor includes a stripe of a plurality of adjacent RF transistor fingers and at least one non-switchable dummy transistor that is arranged at an end of the stripe of the switchable RF transistor.

Abstract: In accordance with an embodiment, a method includes coupling power from a transmitter to form a first signal, conditioning the first signal to form a second signal, and coupling the second signal to an input of a receiver. Conditioning includes adjusting the second signal to combine in anti-phase with a leakage signal coupled from the transmitter to the input of the receiver such that the leakage signal is attenuated.

Abstract: An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.

Abstract: Embodiments provide a mobile communication device comprising an adaptive filter for filtering a RF signal and a controller. The adaptive filter comprises a first terminal, a second terminal, a reference terminal for providing a reference potential, a first filter structure connected in series between the first terminal and the second terminal, a second filter structure connected in series between the first terminal and the reference terminal, and a third filter structure connected in series between the second terminal and the reference terminal, wherein at least one filter structure of the first, second and third filter structures comprises at least one switchable filter element. The controller is configured to selectively activate or deactivate the at least one switchable filter element based on the RF signal or a baseband version thereof.

Abstract: One aspect of the invention relates to a shielding device for shielding from electromagnetic radiation, including a shielding base element, a shielding cover element and a shielding lateral element for electrically connecting the base element to the cover element in such that a circuit part to be shielded is arranged within the shielding elements. Since at least one partial section of the shielding elements includes a semiconductor material, a shielding device can be realized completely and cost-effectively in an integrated circuit.

Abstract: In accordance with an embodiment, a method of testing an integrated circuit, includes receiving a supply voltage on the integrated circuit via a first input pin, providing power to circuits disposed on the integrated circuit via the first input pin, comparing the supply voltage to an internally generated voltage, generating a digital output value based on the comparing, and applying the digital output value to a pin of the integrated circuit.