Abstract: A trapped-ion quantum computer may include a plurality of quantum computing modules; and a coherent quantum matter-link between adjacent quantum computing modules. The coherent quantum matter-link may be characterized by an infidelity associated with atom loss during transfer between adjacent modules or an infidelity associated with loss of coherence during atom transfer between adjacent modules.

Abstract: There is provided an ion trap comprising a first current source, a first pair of parallel wires forming a plane and having a space therebetween, each of the wires being connected to the first current source such that current flows in opposite directions along each of the parallel wires, a second current source; and a second pair of parallel wires arranged in the plane of the first pair of parallel wires and in the space between the first pair of parallel wires and being substantially perpendicular to the first pair of wires, each of the second pair of wires being connected to the second current source such that each of the second pair current flows in opposite directions along each of the second pair of parallel wires.

Abstract: A micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. A single 111Cd+ ion is confined, laser cooled, and the heating measured in an integrated radiofrequency trap etched from a doped gallium arsenide (GaAs) heterostructure. Single 111Cd+ qubit ions are confined in a radiofrequency linear ion trap on a semiconductor chip by applying a combination of static and oscillating electric potentials to integrated electrodes. The electrodes are lithographically patterned from a monolithic semiconductor substrate, eliminating the need for manual assembly and alignment of individual electrodes. The scaling of this structure to hundreds or thousands of electrodes is possible with existing semiconductor fabrication technology.

Abstract: A micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. A single 111Cd+ ion is confined, laser cooled, and the heating measured in an integrated radiofrequency trap etched from a doped gallium arsenide (GaAs) heterostructure. Single 111Cd+ qubit ions are confined in a radiofrequency linear ion trap on a semiconductor chip by applying a combination of static and oscillating electric potentials to integrated electrodes. The electrodes are lithographically patterned from a monolithic semiconductor substrate, eliminating the need for manual assembly and alignment of individual electrodes. The scaling of this structure to hundreds or thousands of electrodes is possible with existing semiconductor fabrication technology.