Abstract: A wavelength conversion matrix includes: at least one wavelength conversion layer that is dry-etchable, where each wavelength conversion layer of the at least one wavelength conversion layer includes a mask area and a non-mask area, the non-mask area is a hollow area, the wavelength conversion layer is configured to superimpose a self-luminous pixel of a display to emit light with a set light wavelength. In the present disclosure, patterning of a wavelength conversion material may be realized by dry etching, thereby improving a resolution of the wavelength conversion matrix.

Abstract: An automated concrete cube processing system. The system comprises a curing stage including a water tank arranged to facilitate curing of a plurality of concrete cubes for a predetermined period of time; a drying stage arranged to facilitate drying of the plurality of concrete cubes upon completion of curing process; a measurement stage arranged to facilitate measuring of dimensions and a weight of each of the plurality of concrete cubes; a compression stage arranged to facilitate undertaking of a compressive strength test on each of the plurality of concrete cubes; and a transportation module arranged to transfer the plurality of concrete cubes among different stages.

Abstract: This invention provides an alloy with an interference thin film and the method for making the same. In one embodiment, said alloy consists essentially of 55.0-78.0 wt % Au, 8.0-24.0 wt % Ag, 8.0-24.0 wt % Cu and 0.0-3.0 wt % deoxidizer, and said interference thin film is grown on a surface of said alloy and has a thickness of less than 200 nm; wherein said interference thin film exhibits a patination color.

Abstract: Methods for manufacturing a light emitting diode (LED) structure. One exemplary method includes forming a first reflector layer and a semiconductor structure on a first substrate, performing an implantation operation to form an isolation material surrounding at least one optical cavity unit in the semiconductor structure, forming a passivation layer on the semiconductor structure, forming an electrode layer on the passivation layer, and forming a second reflector layer on the passivation layer and the electrode layer.

Abstract: The application describes a method of treating chronic obstructive pulmonary disease (COPD) in a patient comprising administering 476 mg of an ST2 antagonist to the patient on Day 1 of a treatment period. The application also describes methods of treating or preventing frequency of moderate to severe exacerbations in a patient having COPD comprising administering an effective amount of an ST2 antagonist to achieve a clinical improvement of at least 10%, at least 20%, at least 21%, at least 22%, at least 25%, at least 30%, at least 35%, at least 40% or at least 45% annualized exacerbation rate reduction than standard of care (SOC).

Abstract: The present disclosure relates to methods of administering Compound I for treating fibrotic disorders, inflammatory disorders or autoimmune disorders.

Abstract: A LED structure includes a substrate, a LED unit formed on the substrate, a first reflector layer formed between the substrate and the LED unit, and a second reflector layer formed on the LED unit. A common anode layer of the LED unit is formed on the first reflector layer. The first reflector layer, the LED unit and the second reflector layer are configured to collectively provide a resonant cavity.

Abstract: The present disclosure relates to methods of administering Compound I for treating fibrotic disorders, inflammatory disorders or autoimmune disorders.

Abstract: A method for manufacturing a light emitting diode (LED) structure is provided. A driving circuit having a plurality of contact pads is formed in a first substrate. A plurality of metal contacts is formed on the first substrate, each metal contact being located on one of the plurality of contact pads. A nonconductive adhesive layer is formed on the first substrate covering the plurality of contact pads and the plurality of metal contacts. A plurality of LED units is formed on the nonconductive adhesive layer. Each LED unit is electrically connected to one of the plurality of contact pads through one of the plurality of metal contacts.

Abstract: A LED structure includes a substrate, a plurality of LED units, a bonding layer and a metal contact. The substrate includes a driving circuit, and a plurality of LED units is formed on the substrate. The bonding layer is formed between the substrate and the plurality of LED units, and the metal contact is formed in the bonding layer beneath each LED unit to electrically connect each LED unit with a contact pad of the driving circuit. A first sectional area of the metal contact is smaller than a second sectional area of each LED unit.

Abstract: A standalone Storage Controller with PCIe Multi-Mode capability that can be configured as PCIe Root-Complex (RC), an End-Point (EP) or a bridge (BR). In EP mode, the Storage Controller acts like a regular PCIe slaved controller which is connected to a PCIe Root-Complex provided by a Host via a PCIe port. While in RC mode, the Storage Controller acts as a PCIe configuration and management entity, a Host acting as a PCIe Root-Complex, which an add-in card or chip can attach to via a PCIe port that is provided by the Storage Controller, supporting any type of Network Device Interface, without an external Root-Complex. While in bridge mode, the Storage Controller can act as a transparent or non-transparent bridge with either a Root-Complex or End-Point port for the internal connection to the bridge.

Abstract: A Multiprotocol Storage Controller (MPSC) System on a Chip (SOC) comprising multiple heterogeneous network interface ports, a switch core, a global memory mapper and a frame router. The interface ports capable of interconnecting networks of devices with differing data and signaling protocols and differing number of data and signal lines.

Abstract: The present disclosure relates to methods of administering Compound I for treating fibrotic disorders, inflammatory disorders or autoimmune disorders.

Abstract: A Multiprotocol Storage Controller (MPSC) System on a Chip (SOC) comprising multiple heterogeneous network interface ports, a switch core, a global memory mapper and a frame router. The interface ports capable of interconnecting networks of devices with differing data and signaling protocols and differing number of data and signal lines.

Abstract: A LED structure includes a substrate, a LED driving circuit, a plurality of conductive pads, and a first LED set. The LED driving circuit is formed in the substrate, and the LED driving circuit includes a plurality of contacts. The plurality of conductive pads are formed on the LED driving circuit, and each conductive pad of the plurality of conductive pads is disposed on a corresponding contact of the plurality of contacts. The first LED set includes a plurality of LED units disposed on a first conductive pad of the plurality of conductive pads. The plurality of LED units of the first LED set are in electric contact with the corresponding contact through the first conductive pad.

Abstract: The present disclosure relates to methods of administering Compound I for treating fibrotic disorders, inflammatory disorders or autoimmune disorders.

Abstract: A LED structure includes a substrate, a first semiconductor layer, a second semiconductor layer, and a color conversion layer. The first semiconductor layer is formed on the substrate, and the first semiconductor layer includes a first LED unit and a second LED unit formed therein. The first LED unit and the second LED unit emit light of a first color. The second semiconductor layer is formed above the first semiconductor layer, and the second semiconductor layer includes a third LED unit formed therein. The third LED unit emits light of a second color different from the first color. The color conversion layer is formed on the first LED unit to convert light of the first color to light of a third color different from the first color and the second color.

Abstract: A standalone Storage Controller with PCIe Multi-Mode capability that can be configured as PCIe Root-Complex (RC), an End-Point (EP) or a bridge (BR). In EP mode, the Storage Controller acts like a regular PCIe slaved controller which is connected to a PCIe Root-Complex provided by a Host via a PCIe port. While in RC mode, the Storage Controller acts as a PCIe configuration and management entity, a Host acting as a PCIe Root-Complex, which an add-in card or chip can attach to via a PCIe port that is provided by the Storage Controller, supporting any type of Network Device Interface, without an external Root-Complex. While in bridge mode, the Storage Controller can act as a transparent or non-transparent bridge with either a Root-Complex or End-Point port for the internal connection to the bridge.

Abstract: A LED structure includes a substrate, a plurality of LED units, a bonding layer and a metal contact. The substrate includes a driving circuit, and a plurality of LED units is formed on the substrate. The bonding layer is formed between the substrate and the plurality of LED units, and the metal contact is formed in the bonding layer beneath each LED unit to electrically connect each LED unit with a contact pad of the driving circuit. A first sectional area of the metal contact is smaller than a second sectional area of each LED unit.

Abstract: A LED structure includes a substrate, a bonding layer, a first doping type semiconductor layer, a multiple quantum well (MQW) layer, a second doping type semiconductor layer, a passivation layer and an electrode layer. The bonding layer is formed on the substrate, and the first doping type semiconductor layer is formed on the bonding layer. The MQW layer is formed on the first doping type semiconductor layer, and the second doping type semiconductor layer is formed on the MQW layer. The second doping type semiconductor layer includes an isolation material made through implantation, and the passivation layer is formed on the second doping type semiconductor layer. The electrode layer is formed on the passivation layer in contact with a portion of the second doping type semiconductor layer through a first opening on the passivation layer.