Abstract: An electrical coupler comprises an inner connector having upper and lower ends, an insulative outer connector element circumscribing the inner connector, and a thermally conductive flange disposed over the upper end of the inner connector and the outer connector for conducting heat from the electrical conductor. The electrical conductor may be utilized in a substrate support for semiconductor wafer processing. The substrate support comprises a chuck body having an electrode embedded therein, and an upper male connector coupled to the electrode and protruding from said chuck body. A cooling plate having the electrical coupler is positioned proximate to the chuck body. The upper male connector is inserted in the electrical coupler, and a power source coupled to the lower portion of the electrical coupler chucks and biases a wafer to an upper surface of said chuck. The thermally conductive flange conducts and transfers heat generated from the upper male connector and electrical coupler to the cooling plate.

Abstract: A substrate processing chamber has a substrate support to support a substrate, and an exhaust conduit about the substrate support. A first process gas distributor directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer energizes the first and second process gases in the chamber. A controller operates the substrate support, gas flow meters, gas energizer, and throttle valve, to process the substrate in the energized gas.

Abstract: A magnetic assembly for a plasma processing chamber includes an annular housing having a radially outward face and a radially inwardly facing opening, a cover plate to seal the radially inwardly facing opening, and a plurality of magnets in the annular housing. The magnets may be in preassembled modules that abut one another in a ring configuration within the annular housing. A plasma processing chamber using the magnetic assembly includes a substrate support that can fit in an inner radius of the magnetic assembly, a gas supply to maintain process gas at a pressure in the chamber, a gas energizer to energize the process gas, and an exhaust to exhaust the process gas.

Abstract: A chamber 30 for processing a substrate 25 comprises a support 55 including an electrode 70 at least partially covered by a dielectric 60 that is permeable to electromagnetic energy. The electrode 70 may be chargeable to electrostatically hold the substrate 25, to couple energy to a gas in the chamber 30, or both. A base 90 below the support 55 comprises a slot 95 that may be adapted to serve as a thermal expansion slot to reduce thermal stresses.

Abstract: An electrostatic chuck 55 for holding a substrate 30 comprises an electrostatic member 100 made from a dielectric 115 covering an electrode 105 that is chargeable to electrostatically hold the substrate 30. A base 175 that includes a heater 235 is joined to the electrostatic member 100. The base may be made from a composite material, such as a porous ceramic infiltrated with the metal, and may be joined to the electrostatic member by a bond layer.

Abstract: A substrate processing chamber has a substrate support to support a substrate, and an exhaust conduit about the substrate support. A first process gas distributor directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer energizes the first and second process gases in the chamber. A controller operates the substrate support, gas flow meters, gas energizer, and throttle valve, to process the substrate in the energized gas.

Abstract: A substrate support 55 comprises first, second and third sections 88, 90, 92 connected to one another by first and second bonds 106, 108, one of the sections comprises a surface 75 adapted to receive a substrate 25. The first bond 106 comprises a first bonding material and the second bond 108 comprises a second bonding material. In one version, the first bonding material is capable of bonding surfaces when heated to a first temperature and the second bonding material is capable of bonding surfaces when heated to a second temperature.

Abstract: An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about ±30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.

Abstract: An electrostatic chuck 55 comprises an electrical connector 140 which is connected to the electrode 105 to conduct an electrical charge to the electrode 105. The electrical connector 140 comprises a refractory metal having a melting temperature of at least about 1500° C., such as for example, tungsten, titanium, nickel, tantalum, molybdenum, or alloys thereof. Preferably, the electrical connector 140 is bonded to the electrode 105 by a metal having a softening temperature of less than about 600° C., such as aluminum, indium, or low melting point alloys.

Abstract: An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about ±30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.

Abstract: An electrostatic chuck 55 comprises an electrostatic member 100 including a dielectric 115 having a surface 120 adapted to receive a substrate 30. The dielectric 115 covers an electrode 105 that is chargeable to electrostatically hold the substrate 30. The base 175 comprises a composite of a plurality of materials, such as, ceramic and metal, for example silicon carbide and aluminum. Optionally, a support 190 can be provided to support the base 175.

Abstract: Apparatus for connecting a first component to a second component in that the first component has a first connecting member attached thereto, the second component has a second connecting member attached thereto and either of the first or second connecting members is provided with a relief. The apparatus is a connector, the first component is a power supply and the second component is an electrostatic chuck. The first connecting member has a bore provided on a top end. The second connecting member has a threaded opening for receiving the first connecting member. Alternately, the second connecting member is provided with a groove disposed radially outward of the threaded opening. The connecting members provided with the reliefs accommodate and withstand the forces exerted thereupon caused by thermal expansion during semiconductor wafer processing.

Abstract: An electrostatic chuck 55 has an electrostatic member 100 including a dielectric 115 having a surface 120 adapted to receive the substrate 30. The dielectric 115 covers an electrode 105 that is chargeable to electrostatically hold the substrate 30. A support 190 below the electrostatic member 100 has a cavity 300 adapted to hold a gas to serve as a thermal insulator to regulate the flow of heat from the electrostatic chuck 55 to a surface 120 of the chamber 25. The cavity 300 has a cross-sectional profile that is shaped to provide a predetermined temperature profile across the substrate 30.