Abstract: A memory device and related techniques are provided to modify data stored in the memory device without the need to send the data to an external device. A command is received at the memory device to modify data stored at a memory location in a memory array of the memory device. The command includes a value to be used for modifying the data. The memory device reads data from the memory location. The data read from the memory location is modified with modify circuit in the memory device based on the value obtained form the command to produce results data. The results data produced by the modify circuit is written back to the memory location. Since the memory device does not need to send the data read from the memory array off-chip to another device, referred to herein as a host device, to update the data, the input/output bandwidth of the bandwidth is substantially reduced, allowing for lower power memory device operation and reduced latency.

Abstract: A memory device and related techniques are provided to modify data stored in the memory device without the need to send the data to an external device. A command is received at the memory device to modify data stored at a memory location in a memory array of the memory device. The command includes a value to be used for modifying the data. The memory device reads data from the memory location. The data read from the memory location is modified with modify circuit in the memory device based on the value obtained form the command to produce results data. The results data produced by the modify circuit is written back to the memory location. Since the memory device does not need to send the data read from the memory array off-chip to another device, referred to herein as a host device, to update the data, the input/output bandwidth of the bandwidth is substantially reduced, allowing for lower power memory device operation and reduced latency.