Patents by Inventor Wing Y. Lum

Wing Y. Lum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radiation-hardened transistor fabricated by modified CMOS process
    Patent number: 6847065
    Abstract: An NMOS field effect transistor (1) is made radiation hard by a pair of guard band implants (115) of limited horizontal extent, extending between the source (30A) and drain (30B) along the edge of the transistor body, and extending only to a limited extent into the field insulator and into the interior of the transistor, leaving an unimplanted area in the center of the body that retains the transistor design threshold voltage.
    Type: Grant
    Filed: April 16, 2003
    Date of Patent: January 25, 2005
    Assignee: Raytheon Company
    Inventor: Wing Y. Lum
  • Low-noise cryogenic MOSFET
    Patent number: 5357130
    Abstract: A microelectronic device of the MOSFET type (20) is structured to exhibit low noise characteristics at cryogenic temperatures of less than about 40K. The device (20) comprises a doped silicon substrate wafer (22), the dopant having an ionization energy in the substrate of more than about 0.1 eV. Preferred substrate dopants include tellurium as an n-type dopant and indium as a p-type dopant. A metal-oxide-semiconductor field effect transistor (20) in the substrate wafer (22) includes a source (24), a drain ( 26 ), and a gate (30) intermediate the source (24) and the drain (26).
    Type: Grant
    Filed: July 24, 1992
    Date of Patent: October 18, 1994
    Assignee: Hughes Aircraft Company
    Inventors: Frank J. Scholz, James W. Roach, Wing Y. Lum
  • Integrated circuit resistor fabrication using focused ion beam
    Patent number: 5047827
    Abstract: A high value, precision resistor (10) includes a doped region (18) having a boustrophedonic (folded or meandering) shape formed in a substrate (12). At least one section of the doped region (18) is formed by implantation using a focused ion beam. Where the entire doped region (18) is formed by the focused ion beam, the length thereof is selected to be large (10 to 100 times the width of the boustrophedonic shape) to maximize the accuracy of the resistor (10) by averaging over variations in grain size and implant dose. Alternatively, a probe resistor (32) and a plurality of similar unconnected doped sections (28) may be formed by means such as photolithography and flood ion implantation. The probe resistor (32) is measured at the desired operating temperature to determine the ratio of the measured resistance to the desired design resistance value.
    Type: Grant
    Filed: August 20, 1990
    Date of Patent: September 10, 1991
    Assignee: Hughes Aircraft Company
    Inventors: William M. Clark, Jr., Gary M. Atkinson, Wing Y. Lum, James R. Herring
  • Method of liquid phase epitaxial growth
    Patent number: 4263064
    Abstract: An improved method of liquid phase epitaxial growth of III-V compound on an nP substrate by growing the epitaxial layer in an atmosphere of H.sub.2 with 10.sup.-5 to 10.sup.-4 mole fraction PH.sub.3.
    Type: Grant
    Filed: February 19, 1980
    Date of Patent: April 21, 1981
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Arthur R. Clawson, Wing Y. Lum, Gerald E. McWilliams