Abstract: An improved, low cost photovoltaic device responsive to ultraviolet radiation includes a body of amorphous silicon having a front contact formed of a thin film of a transparent, electrically conductive oxide. In order to achieve desired quantum efficiencies in the spectral region from 200-400 nm, the oxide film is less than 50 nm in thickness and most preferably is about 15 to 30 nm in thickness. A metallic current collector may be disposed on part of the oxide film to reduce resistive losses in current collection. The amorphous silicon body may include a P-I-N structure or a doped film disposed on an oppositely doped crystalline silicon layer. In some embodiments of the device, the amorphous silicon region or body disposed in contact with the oxide film is preferably microcrystalline silicon.