Patents by Inventor Wingyu Lueng

Wingyu Lueng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus of operating a non-volatile DRAM
    Patent number: 8320190
    Abstract: A non-volatile DRAM cell includes a pass-gate transistor and a cell capacitor. A read operation of the non-volatile cell begins by negatively charging the cell capacitor. A cell capacitor of an associated dummy non-volatile DRAM cell is fully discharged. The pass-gate transistor is activated and if the pass-gate transistor is programmed it does not turn on and if it is erased, it turns on. Charge is shared on the complementary pair of precharged bit lines connected to the non-volatile DRAM cell and its associated Dummy non-volatile DRAM cell. A sense amplifier detects the difference in the data state stored in the pass-gate transistor. The program and erase of the non-volatile DRAM cell is accomplished by charge injection from the associated bit line of the non-volatile DRAM cell.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: November 27, 2012
    Assignee: Chip Memory Technology, Inc.
    Inventor: Wingyu Lueng
  • Method and apparatus of operating a non-volatile DRAM
    Publication number: 20120026794
    Abstract: A non-volatile DRAM cell includes a pass-gate transistor and a cell capacitor. A read operation of the non-volatile cell begins by negatively charging the cell capacitor. A cell capacitor of an associated dummy non-volatile DRAM cell is fully discharged. The pass-gate transistor is activated and if the pass-gate transistor is programmed it does not turn on and if it is erased, it turns on. Charge is shared on the complementary pair of precharged bit lines connected to the non-volatile DRAM cell and its associated Dummy non-volatile DRAM cell. A sense amplifier detects the difference in the data state stored in the pass-gate to transistor. The program and erase of the non-volatile DRAM cell is accomplished by charge injection from the associated bit line of the non-volatile DRAM cell.
    Type: Application
    Filed: October 11, 2011
    Publication date: February 2, 2012
    Inventor: Wingyu Lueng
  • Method and apparatus of operating a non-volatile DRAM
    Patent number: 8059471
    Abstract: A non-volatile DRAM cell includes a pass-gate transistor and a cell capacitor. A read operation of the non-volatile cell begins by negatively charging the cell capacitor. A cell capacitor of an associated dummy non-volatile DRAM cell is fully discharged. The pass-gate transistor is activated and if the pass-gate transistor is programmed it does not turn on and if it is erased, it turns on. Charge is shared on the complementary pair of precharged bit lines connected to the non-volatile DRAM cell and its associated Dummy non-volatile DRAM cell. A sense amplifier detects the difference in the data state stored in the pass-gate transistor. The program and erase of the non-volatile DRAM cell is accomplished by charge injection from the associated bit line of the non-volatile DRAM cell.
    Type: Grant
    Filed: December 12, 2008
    Date of Patent: November 15, 2011
    Assignee: Chip Memory Technology Inc.
    Inventor: Wingyu Lueng
  • Method and apparatus of operating a non-volatile DRAM
    Publication number: 20090201730
    Abstract: A non-volatile DRAM cell includes a pass-gate transistor and a cell capacitor. A read operation of the non-volatile cell begins by negatively charging the cell capacitor. A cell capacitor of an associated dummy non-volatile DRAM cell is fully discharged. The pass-gate transistor is activated and if the pass-gate transistor is programmed it does not turn on and if it is erased, it turns on. Charge is shared on the complementary pair of precharged bit lines connected to the non-volatile DRAM cell and its associated Dummy non-volatile DRAM cell. A sense amplifier detects the difference in the data state stored in the pass-gate transistor. The program and erase of the non-volatile DRAM cell is accomplished by charge injection from the associated bit line of the non-volatile DRAM cell.
    Type: Application
    Filed: December 12, 2008
    Publication date: August 13, 2009
    Inventor: Wingyu Lueng