Abstract: A method of forming a semiconductor device includes providing a substrate having a recess, and growing an epitaxial feature in the recess. The method of growing the epitaxial feature includes: (a) growing a sub-layer of the epitaxial feature; (b) selectively etching the sub-layer of the epitaxial feature while providing a first UV radiation; and (c) repeating step (a) and step (b) alternately multiple times.

Abstract: Techniques are disclosed relating to cache footprint management. In some embodiments, execution circuitry is configured to perform operations for instructions from multiple threads in parallel. Cache circuitry may store information operated on by threads executed by the execution circuitry. Scheduling circuitry may arbitrate among threads to schedule threads for execution by the execution circuitry. Tracking circuitry may determine one or more performance metrics for the cache circuitry. Control circuitry may, based on the one or more performance metrics meeting a threshold, reduce a limit on a number of threads considered for arbitration by the scheduling circuitry, to control a footprint of information stored by the cache circuitry. Disclosed techniques may advantageously reduce or avoid cache thrashing for certain processor workloads.

Abstract: Textured particles and methods of making the same. A textured particle includes an inner core and a spherical solid outer shell including an outer surface. The inner core is inside the outer shell. The outer surface includes a first tier texture including a first metal, wherein the first metal is greater than 50 atomic % of a total atomic content of all metals in the first tier texture; a second tier texture including the second metal, wherein the second metal is greater than 50 atomic % of a total atomic content of all metals in the second tier texture; and a third tier texture including the third metal, wherein the third metal is greater than 50 atomic % of a total atomic content of all metals in the third tier texture. The first metal, second metal, and third metals are different metals.

Abstract: A fin-like field-effect transistor (FinFET) device is disclosed. The device includes a semiconductor substrate having a source/drain region, a plurality of isolation regions over the semiconductor substrate and a source/drain feature in the source/drain region. The source/drain feature includes a multiple plug-type portions over the substrate and each of plug-type portion is isolated each other by a respective isolation region. The source/drain feature also includes a single upper portion over the isolation regions. Here the single upper portion is merged from the multiple plug-type portions. The single upper portion has a flat top surface facing away from a top surface of the isolation region.

Abstract: Described herein are methods using mechanical inverting tube apparatuses to remove clot (e.g., thrombectomy), the apparatuses including an inversion support catheter having an expandable funnel-shaped distal end, and a flexible tube that can be continuously rolled over the funnel-shaped distal end and invert into the inner lumen of the inversion support catheter.

Abstract: A system and method for assessing deterioration of a metallurgical runner using acoustic emissions. The system may be referred to as an acoustic emission runner integrity system (AERIS). The system comprises acoustic emission sensors mounted on the runner. At least some of the sensors can detect acoustic emission signals in the runner. The sensors may be able to emit acoustic emission signals into the runner. The sensors are in communication with a controller. The controller is configured to one or more of identify and monitor deterioration of the runner based on the acoustic emission signals of the sensors. The method comprises affixing AE sensors to the runner, detecting AE signals with the sensors, and assessing deterioration of the runner based on the AE signals of the sensors.

Abstract: A method of semiconductor fabrication includes positioning a substrate on a susceptor in a chamber and growing an epitaxial feature on the substrate. The growing includes providing UV radiation to a first region of a surface of the substrate and while providing the UV radiation, growing a first portion of the epitaxial feature on the first region of the surface while concurrently growing a second portion of the epitaxial feature on a second region of the surface of the substrate. The first portion of the epitaxial feature can be greater in thickness than the second portion of the epitaxial feature.

Abstract: The present invention relates to methods for treating or preventing atherosclerotic cardiovascular disease and other conditions associated with elevated levels of lipoprotein (a) (Lp(a)) using RNAi constructs targeting the LPA gene, which encodes apolipoprotein(a), a component of Lp(a) particles. In particular, the present invention relates to methods for reducing serum Lp(a) levels and reducing the risk of cardiovascular events in patients with elevated levels of Lp(a) comprising administering an LPA-targeted RNAi construct according to specific dosage regimens. Pharmaceutical compositions comprising the LPA-targeted RNAi constructs for use in the methods are also disclosed.

Abstract: Example embodiments described herein therefore relate to an object-model based event detection system that comprises a plurality of sensor devices, to perform operations that include: generating sensor data at the plurality of sensor devices; accessing the sensor data generated by the plurality of sensor devices; detecting an event, or precursor to an event, based on the sensor data, wherein the detected event corresponds to an event category; accessing an object model associated with the event type in response to detecting the event, wherein the object model defines a procedure to be applied by the event detection system to the sensor data; and streaming at least a portion of a plurality of data streams generated by the plurality of sensor devices to a server system based on the procedure, wherein the server system may perform further analysis or visualization based on the portion of the plurality of data streams.

Abstract: Techniques are disclosed relating to arbitration for computer memory resources. In some embodiments, an apparatus includes queue circuitry that implements multiple queues configured to queue requests to access a memory bus. Control circuitry may, in response to detecting a first threshold condition associated with the queue circuitry, generate a first snapshot that indicates numbers of requests in respective queues of the multiple queues at a first time. The control circuitry may generate a second snapshot that indicates numbers of requests in respective queues of the multiple queues at a second time that is subsequent to the first time. The control circuitry may arbitrate between requests from the multiple queues to select requests to access the memory bus, where the arbitration is based on snapshots to which requests from the multiple queues belong. Disclosed techniques may approximate age-based scheduling while reducing area and power consumption.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a substrate and a fin protruding from the substrate in a first direction. In addition, the fin includes a well region and an anti-punch through region over the well region. The semiconductor structure further includes a barrier layer formed over the anti-punch through region and channel layers formed over the fin and spaced apart from the barrier layer in the first direction. The semiconductor structure further includes a first liner layer formed around the fin and an isolation structure formed over the first liner layer. The semiconductor structure further includes a gate wrapping around the channel layers and extending in a second direction. In addition, a top surface of the barrier layer is higher than a top surface of the first liner layer in a cross-sectional view along the second direction.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate and a semiconductor layer formed over the substrate. The semiconductor device further includes a first channel layer and a second channel layer and a first insulating structure interposing the first channel layer and the semiconductor layer and a second insulating structure interposing the first channel layer and the second channel layer. The semiconductor device further includes a gate stack abutting the first channel layer and the second channel layer, and the gate stack includes a first portion vertically sandwiched between the first channel layer and the semiconductor layer and a second portion vertically sandwiched between the first channel layer and the second channel layer.

Abstract: A method comprising selecting at least one granola; mixing at least two additives with a selected granola and at least one sugar; coating the at least one granola with a dry corn syrup solid; generating a first moisture barrier that encapsulates a coated granola; dividing the granola cluster into at least one predetermined size; reducing a temperature associated with the granola cluster; generating a second moisture barrier that encapsulates the first moisture barrier that encapsulates the coated granola; and storing the coated granola cluster in a climate-controlled package for at least twelve hours.

Abstract: The present invention relates to, inter alia, combinations, methods, compositions, and oral dosage forms of a FAK inhibitor and a MEK inhibitor, for treating abnormal cell growth (e.g., cancer).

Abstract: Compounds of general formula I X1 is a CD2 group or a CT2 group; X2 is oxygen or a group (CZ1Z2)n, wherein Z1 and Z2 on each occurrence independently each are hydrogen, deuterium, or tritium and n is an integer from 1 to 12; X3 is a CD2 group or a CT2 group; and R is selected from the group consisting of hydroxy, -NO2, halogen, a diazonium ion, a diazonium salt, a trialkylammonium ion, a trialkylammonium salt, a dialkoxyarene, a sulphoxide, a boronic acid, a boronic acid ester, an organotin compound, an iodonium ion, an iodonium salt, an iodonium ylide, and a sulphonate.

Abstract: Described herein are methods using mechanical inverting tube apparatuses to remove clot (e.g., thrombectomy), the apparatuses including an inversion support catheter having an expandable funnel-shaped distal end, and a flexible tube that can be continuously rolled over the funnel-shaped distal end and invert into the inner lumen of the inversion support catheter.