Patents by Inventor Winston G. Scott

Winston G. Scott has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming transistor gates; and methods of forming programmable read-only memory constructions
    Patent number: 7183185
    Abstract: The invention includes a method of forming a transistor gate. One or more conductive materials are formed over a semiconductor substrate, and a block is formed over the one or more conductive materials. The block comprises a photoresist mass and a material other than photoresist which is against the photoresist. A pattern is transferred from the block to the one or more conductive materials to pattern a transistor gate construction from the one or more conductive materials.
    Type: Grant
    Filed: October 26, 2005
    Date of Patent: February 27, 2007
    Assignee: Micron Technology, Inc.
    Inventor: Winston G. Scott
  • Methods of forming transistor gates
    Patent number: 6995080
    Abstract: The invention includes a method of forming a transistor gate. One or more conductive materials are formed over a semiconductor substrate, and a block is formed over the one or more conductive materials. The block comprises a photoresist mass and a material other than photoresist which is against the photoresist. A pattern is transferred from the block to the one or more conductive materials to pattern a transistor gate construction from the one or more conductive materials.
    Type: Grant
    Filed: August 5, 2003
    Date of Patent: February 7, 2006
    Assignee: Micron Technology, Inc.
    Inventor: Winston G. Scott
  • Methods of forming transistor gates; and methods of forming programmable read-only memory constructions
    Publication number: 20040038460
    Abstract: The invention includes a method of forming a transistor gate. One or more conductive materials are formed over a semiconductor substrate, and a block is formed over the one or more conductive materials. The block comprises a photoresist mass and a material other than photoresist which is against the photoresist. A pattern is transferred from the block to the one or more conductive materials to pattern a transistor gate construction from the one or more conductive materials.
    Type: Application
    Filed: August 5, 2003
    Publication date: February 26, 2004
    Inventor: Winston G. Scott
  • Methods of forming transistor gates; and methods of forming programmable read-only memory constructions
    Patent number: 6627524
    Abstract: The invention includes a method of forming a transistor gate. One or more conductive materials are formed over a semiconductor substrate, and a block is formed over the one or more conductive materials. The block comprises a photoresist mass and a material other than photoresist which is against the photoresist. A pattern is transferred from the block to the one or more conductive materials to pattern a transistor gate construction from the one or more conductive materials.
    Type: Grant
    Filed: June 6, 2001
    Date of Patent: September 30, 2003
    Assignee: Micron Technology, Inc.
    Inventor: Winston G. Scott
  • Methods of forming transistor gates; and methods of forming programmable read-only memory constructions
    Publication number: 20020187611
    Abstract: The invention includes a method of forming a transistor gate. One or more conductive materials are formed over a semiconductor substrate, and a block is formed over the one or more conductive materials. The block comprises a photoresist mass and a material other than photoresist which is against the photoresist. A pattern is transferred from the block to the one or more conductive materials to pattern a transistor gate construction from the one or more conductive materials.
    Type: Application
    Filed: June 6, 2001
    Publication date: December 12, 2002
    Inventor: Winston G. Scott