Abstract: The present disclosure relates to a diode laser and a method for producing the same. In one embodiment, the diode laser, comprises a passive pedestal layer structure, an active ridge layer structure positioned over the passive pedestal layer structure, a p-contact contacting a top side of the active ridge layer structure, a first n-contact disposed on a first side of the active ridge layer structure, a second n-contact disposed on a second side of the active ridge layer structure and, an n-final-metal layer connecting the first n-contact metal and the second n-contact metal, wherein the n-final-metal layer is continuous over the active ridge layer structure.

Abstract: The present disclosure relates to a diode laser and a method for producing the same. In one embodiment, the diode laser, comprises a passive pedestal layer structure, an active ridge layer structure positioned over the passive pedestal layer structure, a p-contact contacting a top side of the active ridge layer structure, a first n-contact disposed on a first side of the active ridge layer structure, a second n-contact disposed on a second side of the active ridge layer structure and, an n-final-metal layer connecting the first n-contact metal and the second n-contact metal, wherein the n-final-metal layer is continuous over the active ridge layer structure.

Abstract: A luminescent solar concentrator (LSC) for receiving electromagnetic radiation of at least a first wavelength is disclosed. The LSC includes a core layer. A lower clad layer substantially underlies the core layer. At least one photovoltaic (PV) cell is partially embedded in at least one of the core layer and the lower clad layer. At least one dye layer substantially overlies the core layer. The at least one dye layer has embedded therein at least one absorption dipole and at least one emission dipole, the at least one emission dipole being coupled to the at least one absorption dipole.

Abstract: A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition.

Abstract: A method of coupling a waveguide to a multi-layered active device structure on a substrate is described. The method includes forming a junction area by etching the active device structure to form a sloped etch profile with respect to the substrate, aligning multiple layers of the multi-layered active device structure via an etch stop adjacent the multi-layered active device structure, and depositing the waveguide over the etched active device structure, wherein a sloped active passive junction is formed at the junction area that reduces residual interface reflection in a resulting coupled device. Also described is a method for removing at least one laser layer in a sloped junction region forming passive amorphous silicon waveguides. This includes depositing a SiN layer for use as an etch mask, patterning a photoresist mask, patterning the SiN layer by reactive ion etching, stripping the photoresist mask, and etching the at least one laser layer.

Abstract: The present disclosure relates to increasing the external efficiency of light emitting diodes, and specifically to increasing the outcoupling of light from an organic light emitting diode utilizing a diffraction grating.

Abstract: A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition.

Abstract: A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition.

Abstract: A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition.

Abstract: A method of fabricating a tunable quantum dot apparatus, comprising: forming multi-quantum wells sandwiched substantially between at least two barrier layers; spin coating a non-continuous mask onto at least one of said barrier layers; forming a gate material onto the mask, wherein the non-continuity of the mask substantially prevents formation of a continuous gate material layer; lifting off at least a portion of the gate material; self isolating the gate material; and, forming a top contact onto at least a portion of said barrier layers

Abstract: An instrument including a scannable mirror employs multimode optical fibers and an optical coupler. Modal dispersion, e.g., from the multimode optical fiber, is reduced by a method employing deconvolution. The scannable mirror may employ a mirror movable in an optical waveguide or an optical fiber wound on an expandable core.

Abstract: A scannable mirror employs a mirror movable in an optical waveguide. The optical waveguide may be fluid filled and the mirror may be moved by an electromagnetic or electrostatic motor.

Abstract: A method of fabricating a tunable quantum dot apparatus, comprising: forming multi-quantum wells sandwiched substantially between at least two barrier layers; spin coating a non-continuous mask onto at least one of said barrier layers; forming a gate material onto the mask, wherein the non-continuity of the mask substantially prevents formation of a continuous gate material layer; lifting off at least a portion of the gate material; self isolating the gate material; and, forming a top contact onto at least a portion of said barrier layers

Abstract: A scannable mirror employs a mirror movable in an optical waveguide. The optical waveguide may be fluid filled and the mirror may be moved by an electromagnetic or electrostatic motor.

Abstract: An instrument including a scannable mirror employs multimode optical fibers and an optical coupler. Modal dispersion, e.g., from the multimode optical fiber, is reduced by a method employing deconvolution. The scannable mirror may employ a mirror movable in an optical waveguide or an optical fiber wound on an expandable core.