Abstract: A method, a system and a program product for use when monitoring degradation of a photovoltaic cell each use a plurality of current-voltage curves for the photovoltaic cell obtained at a plurality of predetermined times, where the plurality of current-voltage curves is obtained when the photovoltaic cell (or related module, string or array) is in operational service. The use of such a plurality of current-voltage curves provides for extraction of a plurality of degradation characteristics or parameters for the photovoltaic cell.

Abstract: A method, a system and a program product for use when monitoring degradation of a photovoltaic cell each use a plurality of current-voltage curves for the photovoltaic cell obtained at a plurality of predetermined times, where the plurality of current-voltage curves is obtained when the photovoltaic cell (or related module, string or array) is in operational service. The use of such a plurality of current-voltage curves provides for extraction of a plurality of degradation characteristics or parameters for the photovoltaic cell.

Abstract: Backlit video display systems where the backlights (for example, LED backlights) are controlled based at least in part on the content of the video signal of the video that is being displayed by the backlit video display system. The system can provide specific control of the three primary colors (for example, red, green and blue LEDs). The system can provide content-based control in a spatial mode. The system is a smart backlighting system with content-based controls at the following levels: (i) spectral, (ii) spatial, and (iii) temporal control. Also, some embodiments may provide a novel way of providing a backlit video display system with night vision (NV) capability through a unique four LED chip architecture.

Abstract: Backlit video display systems where the backlights (for example, LED backlights) are controlled based at least in part on the content of the video signal of the video that is being displayed by the backlit video display system. The system can provide specific control of the three primary colors (for example, red, green and blue LEDs). The system can provide content-based control in a spatial mode. The system is a smart backlighting system with content-based controls at the following levels: (i) spectral, (ii) spatial, and (iii) temporal control. Also, some embodiments may provide a novel way of providing a backlit video display system with night vision (NV) capability through a unique four LED chip architecture.

Abstract: A method of forming an ultraviolet (UV) photodetector includes forming an epitaxial semiconductor metal oxide layer on a substrate, wherein the forming includes using an O2 flow rate and applied RF plasma power which together provide a ratio of O• (oxygen radicals) to O+ of at least 1.5. Metal fingers are formed on a surface of the semiconductor metal oxide layer. The metal fingers can include a multi-layer stack including a metal having a 25° C. work function <4 eV positioned between an adhesion layer and an oxidation resistant metal capping layer. The semiconductor metal oxide layer can be Zn1-xMgxO wherein 0<x<1.

Abstract: A photodetector (PD) includes a substrate, and a ZnO nucleation layer on the substrate. A wurtzite MgxZn1-xO layer is on the ZnO nucleation layer, wherein x is a mole fraction between 0 and 0.62. A level of crystallinity of the wurtzite MgxZn1-xO layer characterized by x-ray diffraction with a deconvolution of a triple-crystal ? rocking curve of a ZnO (0002) peak has a narrow component with a full width at half maximum (FWHM) less than or equal to (?) 20 arc/s. First and second spaced apart electrodes are on a surface of the wurtzite MgxZn1-xO layer. The mole fraction x can be between 0.20 and 0.46, including between 0.37 and 0.46, and provide a PD responsivity of at least 20 A/W at 5V in the solar blind region from 200 nm to 290 nm.

Abstract: A photodetector (PD) includes a substrate, and a ZnO nucleation layer on the substrate. A wurtzite MgxZn1-xO layer is on the ZnO nucleation layer, wherein x is a mole fraction between 0 and 0.62. A level of crystallinity of the wurtzite MgxZn1-xO layer characterized by x-ray diffraction with a deconvolution of a triple-crystal ? rocking curve of a ZnO (0002) peak has a narrow component with a full width at half maximum (FWHM) less than or equal to (?) 20 arc/s. First and second spaced apart electrodes are on a surface of the wurtzite MgxZn1-xO layer. The mole fraction x can be between 0.20 and 0.46, including between 0.37 and 0.46, and provide a PD responsivity of at least 20 A/W at 5V in the solar blind region from 200 nm to 290 nm.

Abstract: A method for forming a boron doped region within a silicon material substrate, and the resulting silicon material substrate that includes the boron doped region, each use a boron doped aluminum oxide material layer as a boron dopant source layer. The method provides the boron doped region with a sheet resistance in a range from about 15 to about 300 ohms per square. The method is also applicable, in general, to forming an n doped region, a p doped region or an n and p co-doped region within a silicon material substrate.

Abstract: A method of forming an ultraviolet (UV) photodetector includes forming an epitaxial semiconductor metal oxide layer on a substrate, wherein the forming includes using an O2 flow rate and applied RF plasma power which together provide a ratio of O• (oxygen radicals) to O+ of at least 1.5. Metal fingers are formed on a surface of the semiconductor metal oxide layer. The metal fingers can include a multi-layer stack including a metal having a 25° C. work function <4 eV positioned between an adhesion layer and an oxidation resistant metal capping layer. The semiconductor metal oxide layer can be Zn1-xMgxO wherein 0<x<1.

Abstract: An organic photovoltaic cell structure and a method for fabricating the organic photovoltaic cell structure are each predicated upon an organic photovoltaic material layer located and formed interposed between an anode and a cathode. The organic photovoltaic cell structure and the method for fabricating the organic photovoltaic cell structure also include for the anode a nickel and indium doped tin oxide material layer (Ni-ITO) that has a nickel doping sufficient to provide a work function of the nickel and indium doped tin oxide material layer (Ni-ITO) anode preferably no more positive than about ?5.0 eV.

Abstract: A cubic epitaxial article and electronic devices therefrom includes a single crystal cubic oxide substrate having a substrate band gap and a top surface. An epitaxial cubic oxide alloy layer that includes at least one transition metal or group IIA metal disposed on the top surface of the substrate. The epitaxial cubic oxide alloy layer has a band gap that is different than the substrate band gap and has a lattice that is lattice matched within 5% to a lattice of the single crystal cubic oxide substrate.

Abstract: A back-to-back parallel tandem organic photovoltaic cell structure and a method for fabricating the back-to-back parallel tandem organic photovoltaic cell structure include an aluminum doped zinc oxide material layer (AZO) as a common central cathode within the back-to-back parallel tandem organic photovoltaic cell structure and sandwiched between (and contacting) a pair of lithium fluoride material layers (LiF). The back-to-back parallel tandem organic photovoltaic cell structure and the related method also includes separate and different active material layers further separated from the aluminum doped zinc oxide material layer (AZO) common central cathode and further separated nickel and indium doped tin oxide material layer (Ni-ITO) anodes. An aluminum doped zinc oxide material layer (AZO) and lithium fluoride material layer (LiF) laminate is also contemplated for use in various photovoltaic cell structures.

Abstract: An organic photovoltaic cell structure and a method for fabricating the organic photovoltaic cell structure are each predicated upon an organic photovoltaic material layer located and formed interposed between an anode and a cathode. The organic photovoltaic cell structure and the method for fabricating the organic photovoltaic cell structure also include for the anode a nickel and indium doped tin oxide material layer (Ni-ITO) that has a nickel doping sufficient to provide a work function of the nickel and indium doped tin oxide material layer (Ni-ITO) anode preferably no more positive than about ?5.0 eV.

Abstract: Backlit video display systems where the backlights (for example, LED backlights) are controlled based at least in part on the content of the video signal of the video that is being displayed by the backlit video display system. The system can provide specific control of the three primary colors (for example, red, green and blue LEDs). The system can content-based control in a spatial mode. The system a smart backlighting system with content-based controls at the following levels: (i) spectral, (ii) spatial, and (iii) temporal control. Also, some embodiments may provide a novel way of providing a backlit video display system with night vision (NV) capability through a unique four LED chip architecture.

Abstract: A cubic epitaxial article and electronic devices therefrom includes a single crystal cubic oxide substrate having a substrate band gap and a top surface. An epitaxial cubic oxide alloy layer that includes at least one transition metal or group IIA metal disposed on the top surface of the substrate. The epitaxial cubic oxide alloy layer has a band gap that is different than the substrate band gap and has a lattice that is lattice matched within 5% to a lattice of the single crystal cubic oxide substrate.