Abstract: The invention provides for systems, methods, and compositions for altering expression of target gene sequences and related gene products. Provided are structural information on the Cas protein of the CRJSPR-Cas system, use of this information in generating modified components of the CRISPR complex, vectors and vector systems which encode one or more components or modified components of a CRISPR complex, as well as methods for the design and use of such vectors and components. Also provided are methods of directing CRISPR complex formation in eukaryotic cells and methods for utilizing the CRISPR-Cas system. In particular the present invention comprehends optimized functional CR.ISPR-Cas enzyme systems. In particular the present invention comprehends engineered new guide architectures and enzymes to be used in optimized Staphylococcus aureus CRISPR-Cas enzyme systems.

Abstract: The invention provides for systems, methods, and compositions for altering expression of target gene sequences and related gene products. Provided are structural information on the Cas protein of the CRISPR-Cas system, use of this information in generating modified components of the CRISPR complex, vectors and vector systems which encode one or more components or modified components of a CRISPR complex, as well as methods for the design and use of such vectors and components. Also provided are methods of directing CRISPR complex formation in eukaryotic cells and methods for utilizing the CRISPR-Cas system. In particular the present invention comprehends optimized functional CRISPR-Cas enzyme systems. In particular the present invention comprehends engineered new guide architectures and enzymes to be used in optimized Staphylococcus aureus CRISPR-Cas enzyme systems.

Abstract: The invention provides for systems, methods, and compositions for targeting nucleic acids. In particular, the invention provides non-naturally occurring or engineered DNA-targeting systems comprising a novel DNA-targeting CRISPR effector protein and at least one targeting nucleic acid component like a guide RNA.

Abstract: The invention provides for systems, methods, and compositions for targeting nucleic acids. In particular, the invention provides non-naturally occurring or engineered DNA-targeting systems comprising a novel DNA-targeting CRISPR effector protein and at least one targeting nucleic acid component like a guide RNA.

Abstract: Disclosed here is a method of identifying novel CRISPR effectors, comprising: identifying sequences in a genomic or metagenomic database encoding a CRISPR array; identifying one or more Open Reading Frames (ORFs) in said selected sequences within 10 kb of the CRISPR array; discarding all loci encoding proteins which are assigned to known CRISPR-Cas subtypes and, optionally, all loci encoding a protein of less than 700 amino acids; and identifying putative novel CRISPR effectors, and optionally classifying them based on structure analysis.

Abstract: The invention provides for systems, methods, and compositions for targeting nucleic acids. In particular, the invention provides non-naturally occurring or engineered DNA-targeting systems comprising a novel DNA-targeting CRISPR effector protein and at least one targeting nucleic acid component like a guide RNA.

Abstract: The invention provides for systems, methods, compositions, and kits for the complete characterization of targeted nuclease specificity which necessitates techniques that can assess the full possibility space of off-target activity and genomic stability following genome editing. Also provided are the materials and techniques which enable the comprehensive genomic stability accompanying a range of cellular perturbations, including genome editing (ZFN, TALEN, CRISPR, and future technologies) and disease modeling among other applications.

Abstract: The invention provides for systems, methods, and compositions for altering expression of target gene sequences and related gene products. Provided are structural information on the Cas protein of the CRISPR-Cas system, use of this information in generating modified components of the CRISPR complex, vectors and vector systems which encode one or more components or modified components of a CRISPR complex, as well as methods for the design and use of such vectors and components. Also provided are methods of directing CRISPR complex formation in eukaryotic cells and methods for utilizing the CRISPR-Cas system. In particular the present invention comprehends optimized functional CRISPR-Cas enzyme systems. In particular the present invention comprehends engineered new guide architectures and enzymes to be used in optimized Staphylococcus aureus CRISPR-Cas enzyme systems.

Abstract: The invention provides for systems, methods, compositions, and kits for the complete characterization of targeted nuclease specificity which necessitates techniques that can assess the full possibility space of off-target activity and genomic stability following genome editing. Also provided are the materials and techniques which enable the comprehensive genomic stability accompanying a range of cellular perturbations, including genome editing (ZFN, TALEN, CRISPR, and future technologies) and disease modeling among other applications.

Abstract: A monolithic integrated circuit including a capacitor structure. In one embodiment the integrated circuit includes at least first and second levels of interconnect conductor for connection to a semiconductor layer and a stack of alternating conductive and insulative layers formed in vertical alignment with respect to an underlying plane. The stack is formed between the first and second levels of conductor. Preferably the stack includes a first conductive layer, a first insulator layer formed over the first conductive layer, a second conductive layer formed over the first insulative layer, a second insulator layer formed over the second conductive layer, and a third conductive layer formed over the second insulative layer, with the first and third conductive layers commonly connected.

Abstract: A method of fabricating a metal-oxide-metal capacitor in a microelectronic device is provided. First, a recess is formed in a surface of a dielectric layer deposited over a microelectronic substrate. A first barrier layer is then deposited over the dielectric layer such that the first barrier layer conforms to the recess. A first conductive element is then deposited over the first barrier layer so as to at least fill the recess. A second barrier layer is further deposited over the first conductive element such that the first barrier layer and the second barrier layer cooperate to encapsulate the first conductive element. The first conductive element thus comprises a first plate of the capacitor. A capacitor dielectric layer is then deposited over the second barrier layer, followed by the deposition of a second conductive element over the capacitor dielectric layer. The second conductive element thus comprises a second plate of the capacitor.

Abstract: An integrated circuit capacitor includes a metal plug in a dielectric layer adjacent a substrate. The metal plug has at least one topographical defect in an uppermost surface portion thereof. A lower metal electrode overlies the dielectric layer and the metal plug. The lower metal electrode includes, in stacked relation, a metal layer, a lower metal nitride layer, an aluminum layer, and an upper metal nitride layer. A capacitor dielectric layer overlies the lower metal electrode, and an upper metal electrode: overlies the capacitor dielectric layer. An advantage of this structure is that the stack of metal layers of the lower metal electrode, will prevent undesired defects at the surface of the metal plug from adversely effecting device reliability or manufacturing yield.

Abstract: A method of fabricating a metal-oxide-metal capacitor in a microelectronic device is provided. First, a recess is formed in a surface of a dielectric layer deposited over a microelectronic substrate. A first barrier layer is then deposited over the dielectric layer such that the first barrier layer conforms to the recess. A first conductive element is then deposited over the first barrier layer so as to at least fill the recess. A second barrier layer is further deposited over the first conductive element such that the first barrier layer and the second barrier layer cooperate to encapsulate the first conductive element. The first conductive element thus comprises a first plate of the capacitor. A capacitor dielectric layer is then deposited over the second barrier layer, followed by the deposition of a second conductive element over the capacitor dielectric layer. The second conductive element thus comprises a second plate of the capacitor.

Abstract: An integrated circuit capacitor includes a metal plug in a dielectric layer adjacent a substrate. The metal plug has at least one topographical defect in an uppermost surface portion thereof. A lower metal electrode overlies the dielectric layer and the metal plug. The lower metal electrode includes, in stacked relation, a metal layer, a lower metal nitride layer, an aluminum layer, and an upper metal nitride layer. A capacitor dielectric layer overlies the lower metal electrode, and an upper metal electrode overlies the capacitor dielectric layer. An advantage of this structure is that the stack of metal layers of the lower metal electrode, will prevent undesired defects at the surface of the metal plug from adversely effecting device reliability or manufacturing yield.

Abstract: A method of fabricating a metal-oxide-metal capacitor in a microelectronic device is provided. First, a recess is formed in a surface of a dielectric layer deposited over a microelectronic substrate. A first barrier layer is then deposited over the dielectric layer such that the first barrier layer conforms to the recess. A first conductive element is then deposited over the first barrier layer so as to at least fill the recess. A second barrier layer is further deposited over the first conductive element such that the first barrier layer and the second barrier layer cooperate to encapsulate the first conductive element. The first conductive element thus comprises a first plate of the capacitor. A capacitor dielectric layer is then deposited over the second barrier layer, followed by the deposition of a second conductive element over the capacitor dielectric layer. The second conductive element thus comprises a second plate of the capacitor.

Abstract: An integrated circuit capacitor includes a metal plug in a dielectric layer adjacent a substrate. The metal plug has at least one topographical defect in an uppermost surface portion thereof. A lower metal electrode overlies the dielectric layer and the metal plug. The lower metal electrode includes, in stacked relation, a metal layer, a lower metal nitride layer, an aluminum layer, and an upper metal nitride layer. A capacitor dielectric layer overlies the lower metal electrode, and an upper metal electrode overlies the capacitor dielectric layer. An advantage of this structure is that the stack of metal layers of the lower metal electrode, will prevent undesired defects at the surface of the metal plug from adversely effecting device reliability or manufacturing yield.