Patents by Inventor Witold Maszara
Witold Maszara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8859389Abstract: Methods of making fins and semiconductor structures containing fins are provided. The methods involve forming a multi-layer structure over a semiconductor substrate. The multi-layer structure comprises a first layer over the semiconductor substrate, a second layer over the first layer, and a third layer over the second layer. The method also comprises removing upper portions of the semiconductor substrate and portions of the multi-layer structure to form fins of the semiconductor substrate and portions of the multi-layer structure. Further, the method comprises selectively oxidizing the first layer while oxidization of the second layer and the third layer is less than the oxidization of the first layer. The oxidation can be performed before gap fill recess or after gap fill recess.Type: GrantFiled: January 28, 2011Date of Patent: October 14, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Hirohisa Kawasaki, Basker Veeraraghavan, Hemant Adhikari, Witold Maszara
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Patent number: 8828839Abstract: Fabrication methods for semiconductor device structures are provided. In an exemplary embodiment, a method of fabricating an electrically-isolated FinFET semiconductor device includes the steps of forming a silicon oxide layer over a semiconductor substrate including a silicon material and forming a first hard mask layer over the silicon oxide layer. The method further includes the steps of forming a first plurality of void spaces in the first hard mask layer and forming a second hard mask layer in the first plurality of void spaces. Still further, the method includes the steps of removing the remaining portions of the first hard mask layer, thereby forming a second plurality of void spaces in the second hard mask layer, extending the second plurality of void spaces into the silicon oxide layer, and forming a plurality of fin structures in the extended second plurality of void spaces.Type: GrantFiled: January 29, 2013Date of Patent: September 9, 2014Assignee: GLOBALFOUNDRIES, Inc.Inventors: David P. Brunco, Witold Maszara
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Publication number: 20140213033Abstract: Fabrication methods for semiconductor device structures are provided. In an exemplary embodiment, a method of fabricating an electrically-isolated FinFET semiconductor device includes the steps of forming a silicon oxide layer over a semiconductor substrate including a silicon material and forming a first hard mask layer over the silicon oxide layer. The method further includes the steps of forming a first plurality of void spaces in the first hard mask layer and forming a second hard mask layer in the first plurality of void spaces. Still further, the method includes the steps of removing the remaining portions of the first hard mask layer, thereby forming a second plurality of void spaces in the second hard mask layer, extending the second plurality of void spaces into the silicon oxide layer, and forming a plurality of fin structures in the extended second plurality of void spaces.Type: ApplicationFiled: January 29, 2013Publication date: July 31, 2014Applicant: GLOBALFOUNDRIES, INC.Inventors: David P. Brunco, Witold Maszara
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Patent number: 8716074Abstract: Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.Type: GrantFiled: September 12, 2012Date of Patent: May 6, 2014Assignee: GlobalFoundries, Inc.Inventors: Witold Maszara, Hemant Adhikari
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Patent number: 8466034Abstract: A method of manufacturing a finned semiconductor device structure is provided. The method begins by providing a substrate having bulk semiconductor material. The method continues by forming a semiconductor fin structure from the bulk semiconductor material, depositing an insulating material overlying the semiconductor fin structure such that the insulating material fills space adjacent to the semiconductor fin structure, and planarizing the deposited insulating material and the semiconductor fin structure to create a flat surface. Thereafter, a replacement gate procedure is performed to form a gate structure transversely overlying the semiconductor fin structure.Type: GrantFiled: March 29, 2010Date of Patent: June 18, 2013Assignee: Globalfoundries, Inc.Inventors: Witold Maszara, Robert J. Miller
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Publication number: 20130005114Abstract: Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.Type: ApplicationFiled: September 12, 2012Publication date: January 3, 2013Applicant: GLOBALFOUNDRIES INC.Inventors: Witold MASZARA, Hemant ADHIKARI
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Patent number: 8334177Abstract: Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.Type: GrantFiled: October 20, 2011Date of Patent: December 18, 2012Assignee: GLOBALFOUNDRIES, Inc.Inventors: Witold Maszara, Hemant Adhikari
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Publication number: 20120193751Abstract: Methods of making fins and semiconductor structures containing fins are provided. The methods involve forming a multi-layer structure over a semiconductor substrate. The multi-layer structure comprises a first layer over the semiconductor substrate, a second layer over the first layer, and a third layer over the second layer. The method also comprises removing upper portions of the semiconductor substrate and portions of the multi-layer structure to form fins of the semiconductor substrate and portions of the multi-layer structure. Further, the method comprises selectively oxidizing the first layer while oxidization of the second layer and the third layer is less than the oxidization of the first layer. The oxidation can be performed before gap fill recess or after gap fill recess.Type: ApplicationFiled: January 28, 2011Publication date: August 2, 2012Applicants: TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC., INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC.Inventors: Hirohisa Kawasaki, Basker Veeraraghavan, Hemant Adhikari, Witold Maszara
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Publication number: 20120040517Abstract: Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.Type: ApplicationFiled: October 20, 2011Publication date: February 16, 2012Applicant: GLOBALFOUNDRIES INC.Inventors: Witold MASZARA, Hemant ADHIKARI
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Patent number: 8101486Abstract: Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.Type: GrantFiled: October 7, 2009Date of Patent: January 24, 2012Assignee: GLOBALFOUNDRIES Inc.Inventors: Witold Maszara, Hemant Adhikari
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Patent number: 8084330Abstract: Embodiments of a method for fabricating a semiconductor device are provided. In one embodiment, the method includes the step of producing a partially-completed semiconductor device including a substrate, source/drain (S/D) regions, a channel region between the S/D regions, a gate stack over the channel region, and sidewall spacers laterally adjacent the gate stack. The method further includes the steps of amorphizing the S/D regions, depositing a silicide-forming material over the amorphized S/D regions, and heating the partially-completed semiconductor device to a predetermined temperature at which the silicide-forming material reacts with the amorphized S/D regions.Type: GrantFiled: September 16, 2009Date of Patent: December 27, 2011Assignee: GLOBALFOUNDRIES Inc.Inventor: Witold Maszara
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Publication number: 20110237046Abstract: A method of manufacturing a finned semiconductor device structure is provided. The method begins by providing a substrate having bulk semiconductor material. The method continues by forming a semiconductor fin structure from the bulk semiconductor material, depositing an insulating material overlying the semiconductor fin structure such that the insulating material fills space adjacent to the semiconductor fin structure, and planarizing the deposited insulating material and the semiconductor fin structure to create a flat surface. Thereafter, a replacement gate procedure is performed to form a gate structure transversely overlying the semiconductor fin structure.Type: ApplicationFiled: March 29, 2010Publication date: September 29, 2011Applicant: GLOBALFOUNDRIES INC.Inventors: Witold MASZARA, Robert J. MILLER
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Publication number: 20110081764Abstract: Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.Type: ApplicationFiled: October 7, 2009Publication date: April 7, 2011Applicant: GLOBALFOUNDRIES Inc.Inventors: Witold MASZARA, Hemant ADHIKARI
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Publication number: 20110062443Abstract: Embodiments of a method for fabricating a semiconductor device are provided. In one embodiment, the method includes the step of producing a partially-completed semiconductor device including a substrate, source/drain (S/D) regions, a channel region between the S/D regions, a gate stack over the channel region, and sidewall spacers laterally adjacent the gate stack. The method further includes the steps of amorphizing the S/D regions, depositing a silicide-forming material over the amorphized S/D regions, and heating the partially-completed semiconductor device to a predetermined temperature at which the silicide-forming material reacts with the amorphized S/D regions.Type: ApplicationFiled: September 16, 2009Publication date: March 17, 2011Applicant: GLOBALFOUNDRIES INC.Inventor: Witold MASZARA
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Patent number: 7871873Abstract: A method of manufacturing semiconductor fins for a semiconductor device may begin by providing a bulk semiconductor substrate. The method continues by growing a layer of first epitaxial semiconductor material on the bulk semiconductor substrate, and by growing a layer of second epitaxial semiconductor material on the layer of first epitaxial semiconductor material. The method then creates a fin pattern mask on the layer of second epitaxial semiconductor material. The fin pattern mask has features corresponding to a plurality of fins. Next, the method anisotropically etches the layer of second epitaxial semiconductor material, using the fin pattern mask as an etch mask, and using the layer of first epitaxial semiconductor material as an etch stop layer. This etching step results in a plurality of fins formed from the layer of second epitaxial semiconductor material.Type: GrantFiled: March 27, 2009Date of Patent: January 18, 2011Assignee: GLOBAL FOUNDRIES Inc.Inventors: Witold Maszara, Ming-Ren Lin, Jin Cho, Zoran Krivokapic
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Publication number: 20100248454Abstract: A method of manufacturing semiconductor fins for a semiconductor device may begin by providing a bulk semiconductor substrate. The method continues by growing a layer of first epitaxial semiconductor material on the bulk semiconductor substrate, and by growing a layer of second epitaxial semiconductor material on the layer of first epitaxial semiconductor material. The method then creates a fin pattern mask on the layer of second epitaxial semiconductor material. The fin pattern mask has features corresponding to a plurality of fins. Next, the method anisotropically etches the layer of second epitaxial semiconductor material, using the fin pattern mask as an etch mask, and using the layer of first epitaxial semiconductor material as an etch stop layer. This etching step results in a plurality of fins formed from the layer of second epitaxial semiconductor material.Type: ApplicationFiled: March 27, 2009Publication date: September 30, 2010Applicant: ADVANCED MICRO DEVICES, INC.Inventors: Witold MASZARA, Ming-Ren LIN, Jin CHO, Zoran KRIVOKAPIC
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Publication number: 20080054316Abstract: A semiconductor substrate is provided having an insulator thereon with a semiconductor layer on the insulator. A deep trench isolation is formed, introducing strain to the semiconductor layer. A gate dielectric and a gate are formed on the semiconductor layer. A spacer is formed around the gate, and the semiconductor layer and the insulator are removed outside the spacer. Recessed source/drain are formed outside the spacer.Type: ApplicationFiled: October 29, 2007Publication date: March 6, 2008Applicant: ADVANCED MICRO DEVICES, INC.Inventors: Qi Xiang, Niraj Subba, Witold Maszara, Zoran Krivokapic, Ming-Ren Lin
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Publication number: 20060211245Abstract: A method of forming an abrupt junction device with a semiconductor substrate is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed on the gate dielectric. A sidewall spacer is formed on the semiconductor substrate adjacent the gate and the gate dielectric. A thickening layer is formed by selective epitaxial growth on the semiconductor substrate adjacent the sidewall spacer. Raised source/drain dopant implanted regions are formed in at least a portion of the thickening layer. Silicide layers are formed in at least a portion of the raised source/drain dopant implanted regions to form source/drain regions, beneath the silicide layers, that are enriched with dopant from the silicide layers. A dielectric layer is deposited over the silicide layers, and contacts are then formed in the dielectric layer to the silicide layers.Type: ApplicationFiled: June 7, 2006Publication date: September 21, 2006Applicant: Advanced Micro Devices, Inc.Inventor: Witold Maszara
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Publication number: 20060180873Abstract: An integrated circuit with a semiconductor substrate is provided. A gate dielectric is on the semiconductor substrate, and a gate is on the gate dielectric. A suicide layer is on the semiconductor substrate adjacent the gate and the gate dielectric. The silicide layer incorporates a substantially uniformly distributed and concentrated dopant therein. A shallow source/drain junction is beneath the salicide layer. An interlayer dielectric is above the semiconductor substrate, and contacts are in the interlayer dielectric to the salicide layer.Type: ApplicationFiled: February 11, 2006Publication date: August 17, 2006Inventors: Mario Pelella, William En, Eric Paton, Witold Maszara
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Publication number: 20060177998Abstract: A method may include forming a gate electrode over a fin structure, depositing a first metal layer on a top surface of the gate electrode, performing a first silicide process to convert a portion of the gate electrode into a metal-silicide compound, depositing a second metal layer on a top surface of the metal-silicide compound, and performing a second silicide process to form a fully-silicided gate electrode.Type: ApplicationFiled: April 20, 2006Publication date: August 10, 2006Inventors: Ming-Ren Lin, Witold Maszara, Haihong Wang, Bin Yu