Abstract: An article comprising an electrodeposited aluminum alloy is described herein. The electrodeposited aluminum alloy comprises an average grain size less than approximately 1 micrometer. The electrodeposited aluminum alloy thickness is greater than approximately 40 micrometers. A ductility of the electrodeposited aluminum alloy is greater than approximately 2%.

Abstract: An article comprising an electrodeposited aluminum alloy is described herein. The electrodeposited aluminum alloy comprises an average grain size less than approximately 1 micrometer. The electrodeposited aluminum alloy thickness is greater than approximately 40 micrometers. A ductility of the electrodeposited aluminum alloy is greater than approximately 2%.

Abstract: The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising alumina particles, silica particles, or a combination thereof, (b) a rate accelerator comprising a phosphonic acid, an N-heterocyclic compound, or a combination thereof, (c) a corrosion inhibitor comprising an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, a fatty acid amino acid, an amine, an amide, or a combination thereof, (d) an oxidizing agent, and (e) an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a cobalt layer, with the polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition including (a) an abrasive comprising alumina particles, silica particles, or a combination thereof, (b) a rate accelerator comprising a phosphonic acid, an N-heterocyclic compound, or a combination thereof, (c) a corrosion inhibitor comprising an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, a fatty acid amino acid, an amine, an amide, or a combination thereof, (d) an oxidizing agent, and (e) an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a cobalt layer, with the polishing composition.

Abstract: Embodiments of the current disclosure are related to electrodeposition.

Abstract: A process is described for treating metal surfaces printed wiring boards and similar substrates to provide improved creep corrosion resistance on such surfaces. A modified organic solderability preservative composition is used in combination with an emulsion polymer to provide a modified polymer coating on the metal surface finish via a chemical reaction to provide enhanced corrosion protection of the surface.

Abstract: A method for treating a metal surface to reduce corrosion thereon and/or to increase the reflectance of the treated surface, the method comprising a) plating a metal surface with an electroless nickel plating solution; and thereafter b) immersion plating silver on the electroless nickel plated surface, whereby corrosion of the metal surface is substantially prevented and/or the reflectance of the silver plated surface is substantially improved. The treating method is useful for increasing the solderability of the metal surface, for example, in electronic packaging applications and in manufacturing light emitting diodes (LEDs).

Abstract: A method for treating a metal surface to reduce corrosion thereon and/or to increase the reflectance of the treated surface, the method comprising a) plating a metal surface with an electroless nickel plating solution; and thereafter b) immersion plating silver on the electroless nickel plated surface, whereby corrosion of the metal surface is substantially prevented and/or the reflectance of the silver plated surface is substantially improved. The treating method is useful for increasing the solderability of the metal surface, for example, in electronic packaging applications.

Abstract: A method for treating a metal surface to reduce corrosion thereon and/or to increase the reflectance of the treated surface, the method comprising a) plating a metal surface with an electroless nickel plating solution; and thereafter b) immersion plating silver on the electroless nickel plated surface, whereby corrosion of the metal surface is substantially prevented and/or the reflectance of the silver plated surface is substantially improved. The treating method is useful for increasing the solderability of the metal surface, for example, in electronic packaging applications.

Abstract: A process is described for treating metal surfaces printed wiring boards and similar substrates to provide improved creep corrosion resistance on such surfaces. A modified organic solderability preservative composition is used in combination with an emulsion polymer to provide a modified polymer coating on the metal surface finish via a chemical reaction to provide enhanced corrosion protection of the surface.

Abstract: A method of reducing solder mask interface attack in a process of fabricating printed circuit boards. The method comprises the steps of providing a printed circuit board with a solder mask applied thereon and treating the printed circuit board with an immersion plating solution, wherein the immersion plating solution is plated onto the printed circuit board with the use of ultrasonics in the plating bath. It has been found that the use of ultrasonics at a frequency of about 40 kHz for the entire plating duration provides beneficial results.

Abstract: An improved method of enhancing the solderability of a copper surface comprising the steps of contacting one or more copper surfaces with a pretreatment composition comprising a dilute solution of an aliphatic carboxylic acid and an additive selected from the group consisting of amines and ammonia and thereafter contacting the one or more surfaces with an organic solderability preservative composition. The improved organic solderability preservative process of the invention forms a more uniform coating that has a better appearance and color.

Abstract: A method of reducing solder mask interface attack in a process of fabricating printed circuit boards. The method comprises the steps of providing a printed circuit board with a solder mask applied thereon and treating the printed circuit board with an immersion plating solution, wherein the immersion plating solution is plated onto the printed circuit board with the use of ultrasonics in the plating bath. It has been found that the use of ultrasonics at a frequency of about 40 kHz for the entire plating duration provides beneficial results.

Abstract: Chemical vapor deposition (CVD) precursor compositions for forming Zr/Hf doped gate dielectric, ferroelectric, or high dielectric constant (k) metal oxide thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(&bgr;-diketonate)2(OR)2, wherein M is Zr or Hf, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.

Abstract: A precursor composition useful for liquid delivery MOCVD, including SBT precursors dissolved in a solvent system containing tetrahydrofuran. The associated liquid delivery MOCVD process may be carried out with vaporization of the precursor composition on a porous vaporization element having an average pore diameter in the range of from about 50 to about 200 micrometers, with the resultant precursor vapor being admixed with a carrier gas to achieve high efficiency formation of SBT films.

Abstract: Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate adducts of the formula M(&bgr;-diketonate)2(L)4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

Abstract: Chemical vapor deposition (CVD) precursor compositions for forming Zr/Hf doped gate dielectric, ferroelectric, or high dielectric constant (k) metal oxide thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(&bgr;-diketonate)2(OR)2, wherein M is Zr or Hf, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.

Abstract: A precursor composition for forming a zirconium and/or hafnium silicate film on a substrate, e.g., by chemical vapor deposition (CVD). Illustrative precursor compositions include (1) a first precursor metal compound or complex including a silicon alcoxide (siloxide) ligand coordinated to a metal M, wherein M=Zr or Hf and (2) a second precursor metal compound or complex including an aliphatic alcoxide ligand coordinated to a metal M, wherein M=Zr or Hf, wherein the relative proportions of the first and second precursors relative to one another are employed to controllably establish the M/Si ratio in the deposited silicate thin film. The precursor composition may contain a solvent medium, so that the composition is adapted for liquid delivery CVD, to form stable thin-film gate dielectrics for fabrication of microelectronic devices.

Abstract: Novel Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate Lewis base adducts having ligands such as: (i) amines bearing terminal NH2 groups; (ii) imine ligands formed as amine (i)/carbonyl reaction products; (iii) combination of two or more of the foregoing ligands (i)-(ii), and (iv) combination of one or more of the foregoing ligands (i)-(ii) with one or more other ligands or solvents. The source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II doped thin-films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.

Abstract: Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate adducts of the formula M(&bgr;-diketonate)2(L)4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.