Abstract: A diode includes a cell field, an intermediate field and a peripheral filed. The cell filed includes at least one first anode region of p-type; at least one pillar region of n-type and in contact with the anode electrode; a barrier region of n-type and in contact with the first anode region and the pillar region from a rear surface side; and a first intermediate region of p-type, in contact with the barrier region from the rear surface side. The intermediate field includes: a second anode region of p-type and in Ohmic contact with the anode electrode, a hole suppression region being in contact with the anode electrode; and a second intermediate region of p-type, in contact with the second anode region and the hole suppression region from the rear surface side. The barrier region is not located in the intermediate field.