Patents by Inventor Wlodzimierz S. Czarnecki

Wlodzimierz S. Czarnecki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11175335
    Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.
    Type: Grant
    Filed: June 19, 2019
    Date of Patent: November 16, 2021
    Assignee: International Business Machines Corporation
    Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
  • Patent number: 11143696
    Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.
    Type: Grant
    Filed: June 19, 2019
    Date of Patent: October 12, 2021
    Assignee: International Business Machines Corporation
    Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
  • Publication number: 20190369161
    Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.
    Type: Application
    Filed: June 19, 2019
    Publication date: December 5, 2019
    Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
  • Publication number: 20190310326
    Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.
    Type: Application
    Filed: June 19, 2019
    Publication date: October 10, 2019
    Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
  • Patent number: 10422829
    Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.
    Type: Grant
    Filed: June 27, 2016
    Date of Patent: September 24, 2019
    Assignee: International Business Machines Corporation
    Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
  • Patent number: 10371742
    Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: August 6, 2019
    Assignee: International Business Machines Corporation
    Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
  • Patent number: 10371743
    Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.
    Type: Grant
    Filed: December 30, 2017
    Date of Patent: August 6, 2019
    Assignee: International Business Machines Corporation
    Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
  • Publication number: 20180120372
    Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.
    Type: Application
    Filed: December 30, 2017
    Publication date: May 3, 2018
    Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
  • Publication number: 20180120370
    Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.
    Type: Application
    Filed: December 29, 2017
    Publication date: May 3, 2018
    Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
  • Publication number: 20180120371
    Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.
    Type: Application
    Filed: December 29, 2017
    Publication date: May 3, 2018
    Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
  • Publication number: 20180113167
    Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.
    Type: Application
    Filed: December 29, 2017
    Publication date: April 26, 2018
    Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
  • Patent number: 9915697
    Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: March 13, 2018
    Assignee: International Business Machines Corporation
    Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
  • Patent number: 9865282
    Abstract: Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: January 9, 2018
    Assignee: International Business Machines Corporation
    Inventors: Said A. Ahmad, Wlodzimierz S. Czarnecki, Ernest S. Gale, Icko E. T. Iben
  • Publication number: 20170370984
    Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.
    Type: Application
    Filed: June 27, 2016
    Publication date: December 28, 2017
    Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
  • Publication number: 20170370986
    Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.
    Type: Application
    Filed: July 21, 2017
    Publication date: December 28, 2017
    Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
  • Publication number: 20170125040
    Abstract: Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.
    Type: Application
    Filed: January 19, 2017
    Publication date: May 4, 2017
    Inventors: Said A. Ahmad, Wlodzimierz S. Czarnecki, Ernest S. Gale, Icko E. T. Iben
  • Patent number: 9613655
    Abstract: Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.
    Type: Grant
    Filed: June 13, 2016
    Date of Patent: April 4, 2017
    Assignee: International Business Machines Corporation
    Inventors: Said A. Ahmad, Wlodzimierz S. Czarnecki, Ernest S. Gale, Icko E. T. Iben
  • Patent number: 9530440
    Abstract: Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: December 27, 2016
    Assignee: International Business Machines Corporation
    Inventors: Said A. Ahmad, Wlodzimierz S. Czarnecki, Ernest S. Gale, Icko E. T. Iben
  • Patent number: 9418685
    Abstract: Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: August 16, 2016
    Assignee: International Business Machines Corporation
    Inventors: Said A. Ahmad, Wlodzimierz S. Czarnecki, Ernest S. Gale, Icko E. T. Iben
  • Patent number: 5634158
    Abstract: Magnetic recording and/or reproducing schemes and systems particularly for use for recording and/or reproducing information in data tracks of a magnetics-on-film (MOF) layer in the image area of a photographic filmstrip in a camera or in other photographic equipment. Recording of a photographic data set related to captured images is effected in n lengthwise extending, total interleaved tracks effected in the alternative by a single one or plural magnetic head array(s) of m magnetic recording heads arranged to extend across the filmstrip width and positioned in the camera alongside the photographic image frame gate.
    Type: Grant
    Filed: June 11, 1996
    Date of Patent: May 27, 1997
    Assignee: Eastman Kodak Company
    Inventors: Russell D. Shon, Wlodzimierz S. Czarnecki, Tomasz M. Jagielinski