Patents by Inventor Wlodzimierz S. Czarnecki
Wlodzimierz S. Czarnecki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11175335Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.Type: GrantFiled: June 19, 2019Date of Patent: November 16, 2021Assignee: International Business Machines CorporationInventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
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Patent number: 11143696Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.Type: GrantFiled: June 19, 2019Date of Patent: October 12, 2021Assignee: International Business Machines CorporationInventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
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Publication number: 20190369161Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.Type: ApplicationFiled: June 19, 2019Publication date: December 5, 2019Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
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Publication number: 20190310326Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.Type: ApplicationFiled: June 19, 2019Publication date: October 10, 2019Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
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Patent number: 10422829Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.Type: GrantFiled: June 27, 2016Date of Patent: September 24, 2019Assignee: International Business Machines CorporationInventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
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Patent number: 10371742Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.Type: GrantFiled: December 29, 2017Date of Patent: August 6, 2019Assignee: International Business Machines CorporationInventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
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Patent number: 10371743Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.Type: GrantFiled: December 30, 2017Date of Patent: August 6, 2019Assignee: International Business Machines CorporationInventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
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Publication number: 20180120371Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.Type: ApplicationFiled: December 29, 2017Publication date: May 3, 2018Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
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Publication number: 20180120372Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.Type: ApplicationFiled: December 30, 2017Publication date: May 3, 2018Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
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Publication number: 20180120370Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.Type: ApplicationFiled: December 29, 2017Publication date: May 3, 2018Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
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Publication number: 20180113167Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.Type: ApplicationFiled: December 29, 2017Publication date: April 26, 2018Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
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Patent number: 9915697Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.Type: GrantFiled: July 21, 2017Date of Patent: March 13, 2018Assignee: International Business Machines CorporationInventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
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Patent number: 9865282Abstract: Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.Type: GrantFiled: January 19, 2017Date of Patent: January 9, 2018Assignee: International Business Machines CorporationInventors: Said A. Ahmad, Wlodzimierz S. Czarnecki, Ernest S. Gale, Icko E. T. Iben
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Publication number: 20170370986Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.Type: ApplicationFiled: July 21, 2017Publication date: December 28, 2017Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
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Publication number: 20170370984Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.Type: ApplicationFiled: June 27, 2016Publication date: December 28, 2017Inventors: Robert G. Biskeborn, Wlodzimierz S. Czarnecki, Icko E. T. Iben, Hugo E. Rothuizen
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Publication number: 20170125040Abstract: Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.Type: ApplicationFiled: January 19, 2017Publication date: May 4, 2017Inventors: Said A. Ahmad, Wlodzimierz S. Czarnecki, Ernest S. Gale, Icko E. T. Iben
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Patent number: 9613655Abstract: Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.Type: GrantFiled: June 13, 2016Date of Patent: April 4, 2017Assignee: International Business Machines CorporationInventors: Said A. Ahmad, Wlodzimierz S. Czarnecki, Ernest S. Gale, Icko E. T. Iben
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Patent number: 9530440Abstract: Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.Type: GrantFiled: October 30, 2015Date of Patent: December 27, 2016Assignee: International Business Machines CorporationInventors: Said A. Ahmad, Wlodzimierz S. Czarnecki, Ernest S. Gale, Icko E. T. Iben
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Patent number: 9418685Abstract: Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.Type: GrantFiled: December 18, 2015Date of Patent: August 16, 2016Assignee: International Business Machines CorporationInventors: Said A. Ahmad, Wlodzimierz S. Czarnecki, Ernest S. Gale, Icko E. T. Iben
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Patent number: 5634158Abstract: Magnetic recording and/or reproducing schemes and systems particularly for use for recording and/or reproducing information in data tracks of a magnetics-on-film (MOF) layer in the image area of a photographic filmstrip in a camera or in other photographic equipment. Recording of a photographic data set related to captured images is effected in n lengthwise extending, total interleaved tracks effected in the alternative by a single one or plural magnetic head array(s) of m magnetic recording heads arranged to extend across the filmstrip width and positioned in the camera alongside the photographic image frame gate.Type: GrantFiled: June 11, 1996Date of Patent: May 27, 1997Assignee: Eastman Kodak CompanyInventors: Russell D. Shon, Wlodzimierz S. Czarnecki, Tomasz M. Jagielinski