Abstract: An ion plating process wherein a substrate to be plated is suspended in a vacuum chamber filled with an inert gas and radio frequency is supplied to the substrate to be plated to create a plasma which is maintained by the inert gas. Positive DC voltage is then applied to the substrate and negative DC voltage to the filament. Power is then applied to the filament, and upon vaporization of the ion source a plasma of evaporated and ionized deposition material is created between the ion source and the substrate to optimize the deposition of metal plating materials and dielectric materials. The ion source, or vaporizing material is wrapped around a filament which is enclosed within the vacuum chamber. One side of the filament is connected to ground and the vaccum chamber is also ground. The RF power supply feeding power to the substrate is connected to ground and to one side of the wrapped filament and ion source.