Patents by Inventor Wojciech P. Giziewicz
Wojciech P. Giziewicz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150241647Abstract: This invention relates to an optoelectronic transceiver which has the following: an optical transmitter, an optical receiver, coupling means consisting of a first and second optical lens made with optically active interfaces for changing/deflecting optical paths of on the one hand optical output signals A of the optical transmitter to a connectable optical light guide and on the other hand of input signals E of the same light guide to the receiver, characterized in that the first lens has a concave reflection surface which lies inside in the coupling means for signals of the optical transmitter and the second lens has a convex transmission surface which lies outside for outgoing signals of the optical transmitter and a concave reflection surface which lies inside for incoming signals.Type: ApplicationFiled: March 3, 2015Publication date: August 27, 2015Inventor: Wojciech P. Giziewicz
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Patent number: 8022494Abstract: A lateral photodiode, with improved response speed, includes a semiconductor substrate having active regions, and a p-type region and an n-type region arranged parallel to the surface of the substrate. The active regions are an n-layer and a p-layer respectively, and stacked in the thickness direction of the substrate to form a p-n junction. In addition, a barrier layer, for preventing movement of carriers from the substrate toward the active region, is provided on the side of the active regions toward the substrate.Type: GrantFiled: January 31, 2007Date of Patent: September 20, 2011Assignees: FUJIFILM Corporation, Massachusetts Institute of TechnologyInventors: Yukiya Miyachi, Wojciech P. Giziewicz, Jurgen Michel, Lionel C. Kimerling
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Patent number: 7723206Abstract: A photodiode in which increased sensitivity and speed are balanced. The photodiode includes: a semiconductor substrate; a plurality of active regions formed on the substrate by selective epitaxial growth; and a comb electrode provided for each of the plurality of active regions and in communication with each other to electrically connect the active regions together.Type: GrantFiled: December 5, 2007Date of Patent: May 25, 2010Assignees: FUJIFILM Corporation, Massachusetts Institute of TechnologyInventors: Yukiya Miyachi, Wojciech P. Giziewicz, Jurgen Michel, Lionel C. Kimerling
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Patent number: 7659627Abstract: A photodiode balanced in increased sensitivity and speed. The photodiode includes a semiconductor substrate, an active region formed on the semiconductor substrate, and a comb electrode connected to the active region. The comb electrode includes a plurality of electrode fingers, and each of the electrode fingers includes a transparent electrode contacting the active region, and an opaque electrode formed on the transparent electrode. Here, the width of the opaque electrode is set smaller than the width of the transparent electrode.Type: GrantFiled: December 5, 2007Date of Patent: February 9, 2010Assignees: FUJIFILM Corporation, Massachusetts Instutite of TechnologyInventors: Yukiya Miyachi, Wojciech P. Giziewicz, Jurgen Michel, Lionel C. Kimerling
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Patent number: 7606499Abstract: A bidirectional transceiver assembly includes a VCSEL structure that emits light at a defined wavelength on a substrate structure. A photodetector receives the light. A hole structure is formed on the substrate structure to allow the light from the VCSEL structure to be emitted so as to form an optical path.Type: GrantFiled: August 1, 2005Date of Patent: October 20, 2009Assignee: Massachusetts Institute of TechnologyInventors: Dong Pan, Jurgen Michel, Edward H. Sargent, Wojciech P. Giziewicz, Lionel C. Kimerling
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Publication number: 20090146239Abstract: A photodiode balanced in increased sensitivity and speed. The photodiode includes a semiconductor substrate, an active region formed on the semiconductor substrate, and a comb electrode connected to the active region. The comb electrode includes a plurality of electrode fingers, and each of the electrode fingers includes a transparent electrode contacting the active region, and an opaque electrode formed on the transparent electrode. Here, the width of the opaque electrode is set smaller than the width of the transparent electrode.Type: ApplicationFiled: December 5, 2007Publication date: June 11, 2009Applicants: FUJIFILM CORPORATION, MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Yukiya MIYACHI, Wojciech P. GIZIEWICZ, Jurgen MICHEL, Lionel C. KIMERLING
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Publication number: 20090146178Abstract: A photodiode in which increased sensitivity and speed are balanced. The photodiode includes: a semiconductor substrate; a plurality of active regions formed on the substrate by selective epitaxial growth; and a comb electrode provided for each of the plurality of active regions and in communication with each other to electrically connect the active regions together.Type: ApplicationFiled: December 5, 2007Publication date: June 11, 2009Applicants: FUJIFILM CORPORATION, MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Yukiya MIYACHI, Wojciech P. GIZIEWICZ, Jurgen MICHEL, Lionel C. KIMERLING
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Publication number: 20080179700Abstract: A lateral photodiode, with improved response speed, includes a semiconductor substrate having active regions, and a p-type region and an n-type region arranged parallel to the surface of the substrate. The active regions are an n-layer and a p-layer respectively, and stacked in the thickness direction of the substrate to form a p-n junction. In addition, a barrier layer, for preventing movement of carriers from the substrate toward the active region, is provided on the side of the active regions toward the substrate.Type: ApplicationFiled: January 31, 2007Publication date: July 31, 2008Applicants: FUJIFILM Corporation, Massachusetts Institute of TechnologyInventors: Yukiya Miyachi, Wojciech P. Giziewicz, Jurgen Michel, Lionel C. Kimerling
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Publication number: 20070274642Abstract: A high-speed optical transmission system includes an optical fiber for transmitting light and an optical receiver for receiving light transmitted from the optical fiber. The optical fiber is a plastic optical fiber (POF), and the optical receiver has a lateral pin structure.Type: ApplicationFiled: March 29, 2007Publication date: November 29, 2007Applicants: FUJIFILM Corporation, MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Takayoshi Inujima, Mikihiko Kato, Satoshi Takahashi, Yukiya Miyachi, Lionel C. Kimerling, Jurgen Michel, Dong Pan, Wojciech P. Giziewicz