Abstract: A sputter target for sputtering a silicon-containing film is provided. The target includes a silicon-containing sputter material layer, and a carrier for carrying the sputter material layer, wherein the sputter material layer contains less than 200 ppm iron.

Abstract: The invention concerns a transport device in an installation for the treatment of substrates with a succession of transport segments for the continuous in-line transport of the substrates along a transport line through several treatment sections, wherein a transfer means is provided for positioning one substrate each into a stationary treatment position. The object of the invention is to improve the functionality of a transport device of the generic method to guarantee reduced cycle times. The object is achieved with a transfer means having at least two matching, mobile combination segments, by means of which the substrate is positionable, wherein the combination segments in an alternating assignment to the transport line form a transport segment.

Abstract: A magnetron cathode for a cathode sputtering system has a target holder for holding a target 9 where the erosion zone is opposite the substrate. The non-sputtering target surfaces 9a are covered with a barrier layer or protective layer 21.

Abstract: The invention relates to a device for coating substrates by sputtering out of a plasma with at least one anode, one cathode, and an electric dc current voltage source, connectable pulse-wise to the anode/cathode path. The length of the voltage pulses and/or the interval between the pulses is regulatable.

Abstract: Cathode base (1) has a hollow target (8) disposed thereon with at least one planar sputtering surface (8a), of circular shape for example, which is encompassed by at least two concentric, continuous projections (8b, 8c), and with a magnet system (6) with pole faces (6c, 6d) of opposite polarity lying on both sides of the target (8) for the production of magnetic lines of force (11, 11', . . . ) running substantially parallel to the sputtering surface (16a), the wall surfaces (8d, 8e) of the projections (8b, 8c) of the target (8), adjoining the sputtering surface (8a) being disposed at an angle (.alpha.) to the perpendicular, is preferably in a range between 30 and 70 degrees.

Abstract: In a device for coating a substrate 1 made of polymethylmethacrylate with aluminum by means of a direct current source 10 which is connected to an electrode 5 disposed in an evacuable coating chamber 15a and electrically connected to a target 3 to be sputtered and the sputtered particles are deposited on a substrate 1 and wherein a process gas is introduced into the coating chamber (15, 15a), helium has is introduced as a process gas in order to improve adhesiveness and service life 2.

Abstract: In a process for coating a plastic substrate 1 made of polymethylmethacrylate with metal using a direct current source 10 connected to an electrode disposed in an evacuable coating chamber 15, 15a and electrically connected to a target 3 to be sputtered, the adhesiveness and the service life of the layer are improved. In a first coating step, an argon plasma is maintained in the coating chamber 15, 15a for an extremely short period of time preferably until the so generated sputtering process passes from the oxidic to the metallic process. In a second coating step, helium is introduced in the coating chamber 15, 15a and a helium plasma is ignited. In a third coating step, argon is introduced into the coating chamber 15, 15a and an argon plasma is ignited and this argon plasma process is maintained until a desired thickness is reached.