Patents by Inventor Wolf Schorn
Wolf Schorn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240083766Abstract: The invention relates to a method for producing MoO2Cl2 under inert conditions, comprising the steps of: (i) charging a reaction vessel with MoO2, (ii) reacting the MoO2 with supplied Cl2 in the reaction vessel at a first temperature T1 to give gaseous MoO2Cl2, (iii) transferring the gaseous MoO2Cl2 into a receiving vessel, (iv) resublimating the gaseous MoO2Cl2 in the receiving vessel to give solid MoO2Cl2 at a second temperature T2 that is lower than T1, and (v) recovering solid MoO2Cl2 with a purity determined by ICP-OES/MS of 99.9996 wt. % or more. The invention also relates to high-purity MoO2Cl2, the use thereof, and electronic components.Type: ApplicationFiled: December 2, 2021Publication date: March 14, 2024Inventors: Timo EBERT, Annika FREY, Nicholas RAU, Wolf SCHORN, Ralf KARCH, Eileen WOERNER, Angelino DOPPIU
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Publication number: 20230295203Abstract: The invention concerns a process for preparing an essentially silicon (Si) free compounds of the general formula [M(O)(OR)y], wherein M = Mo, y = 3 or M = W, y = 3 or 4. Furthermore, it is directed towards compounds obtained by the aforementioned process and towards the use of such an obtained compound. Another objective of the herein described invention are essentially silicon free compounds of the general formula MOXy or [MOXy(solv)p], prepared using the aforementioned process, wherein M = Mo, y = 3 or M = W, y = 3 or 4, X = Cl or Br, solv = an oxidizing agent Z binding or coordinating to M via at least one donor atom, p = 1 or 2.Type: ApplicationFiled: April 1, 2020Publication date: September 21, 2023Applicant: UMICORE AG & CO. KGInventors: Nicholas RAU, Wolf SCHORN, Annika FREY, Angelino DOPPIU, Eileen WOERNER, Ralf KARCH
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Patent number: 11643425Abstract: The invention relates to compounds in accordance with the general formula [Ru(arene)(Ra—N?CR1—CR3?N—Rb)] or [Ru(arene)((Rc,Rd)N—N?CRH1—CRH3?N—N(Re,Rf))]. In this case, arene is selected from the group consisting of mononuclear and polynuclear arenes and heteroarenes. R1, R3, RH1, RH3 and Ra-Rf are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl radical. It further relates to methods for the production of these compounds, compounds obtainable according to these methods, their use and a substrate having on a surface thereof a ruthenium layer or a layer containing ruthenium. In addition, the invention relates to a method for producing compounds [Ru(arene)X2]2, wherein arene is selected from the group consisting of mononuclear and polynuclear arenes and X=halogen, compounds of this type obtainable according to this method, and their use.Type: GrantFiled: July 26, 2019Date of Patent: May 9, 2023Assignee: UMICORE AG & CO. KGInventors: Nicholas Rau, Jörg Sundermeyer, Henrik Schumann, Andreas Rivas Nass, Annika Frey, Wolf Schorn, Eileen Woerner, Ralf Karch, Angelino Doppiu
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Patent number: 11584764Abstract: The invention relates to methods for the production of trialkylindium (InR3), wherein the production takes place in a reaction mixture that contains at least one alkylindium halide, a trialkylaluminum (AlR3), a carboxylate, and a solvent, wherein R is chosen independently of one another from C1-C4 alkyl, and X is chosen independently of one another from Cl, Br, and I.Type: GrantFiled: May 25, 2018Date of Patent: February 21, 2023Assignee: Umicore AG & Co. KGInventors: Wolf Schorn, Ralf Karch, Annika Frey, Angelino Doppiu, Andreas Rivas Nass, Eileen Woerner
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Publication number: 20220153768Abstract: Metal complexes of formula (I) are described: [M(L1)x(L2)y(hydra)z]n??formula (I) wherein: M=metal atom having an atomic number selected from the ranges a) through c): a) 12, 21 to 34, with the exception of 30, b) 39 to 52, with the exception of 48, c) 71 to 83, with the exception of 80, L1=neutral or anionic ligand, with x=0 or 1, L2=neutral or anionic ligand, with y=0 or 1, (hydra)=acetone dimethylhydrazone monoanion, with z=1, 2, or 3, n=1 or 2, and the total charge of the complex is 0.Type: ApplicationFiled: March 27, 2020Publication date: May 19, 2022Inventors: Joerg SUNDERMEYER, Henrik SCHUMANN, Wolf SCHORN, Nicholas RAU, Annika FREY, Ralf KARCH, Eileen WOERNER, Angelino DOPPIU
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Publication number: 20220056061Abstract: The invention relates to a two-stage synthesis for the production of bis(tertbutylimido)bis(dialkylamido)tungsten compounds according to the general formula [W(NtBu)2(NRARB)2] (I), starting from [W(NtBu)2(NHtBu)2]. The invention also relates to compounds according to the general formula [W(NtBu)2(NRARB)2] (I), obtainable according to the claimed method, compounds according to general formula [W(NtBu)2(NRARB)2] (I), with the exception of [W(NtBu)2(NMe2)2] and [W(NtBu)2(NEtMe)2], the use of a compound [W(NtBu)2(NRARB)2] (I), and a substrate which, on a surface, has a tungsten layer or a tungsten-containing layer. Defined bis(tertbutylimido)bis(dialkylamido)tungsten compounds of the type [W(NtBu)2(NRARB)2] (I) can be produced easily, economically and reproducibly in high purity and good yields by means of the described method. On account of their high purity, the compounds are suitable for producing high-quality substrates which have tungsten layers or tungsten-containing layers.Type: ApplicationFiled: November 28, 2019Publication date: February 24, 2022Applicant: UMICORE AG & CO. KGInventors: Susanne HERRITSCH, Joerg SUNDERMEYER, Andreas RIVAS NASS, Oliver BRIEL, Ralf KARCH, Wolf SCHORN, Annika FREY, Angelino DOPPIU, Eileen WOERNER
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Publication number: 20210388006Abstract: The invention relates to a method for producing dialkylamido element compounds. In particular, the invention relates to a method for producing dialkylamido element compounds of the type E(NRR?)x, wherein first WAIN is reacted with HNRR? in order to form M[Al(NRR?)4] and hydrogen, and then the formed M[Al(NRR?)4] is reacted with EXx in order to form E(NRR?)x and M[AlX4], wherein M=Li, Na, or K, R=CnH2n+1, where n=1 to 20, and independently thereof R?=CnH2n+1, where n=1 to 20, E is an element of the groups 3 to 15 of the periodic table of elements, X=F, Cl, Br, or I, and x=2, 3, 4 or 5.Type: ApplicationFiled: September 5, 2019Publication date: December 16, 2021Applicant: UMICORE AG & CO, KGInventors: Susanne HERRITSCH, Joerg SUNDERMEYER, Angelino DOPPIU, Annika FREY, Ralf KARCH, Andreas RIVAS NASS, Wolf SCHORN, Eileen WOERNER
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Publication number: 20210371442Abstract: The present patent application relates to novel allyl cobalt complexes, to a process for their preparation and to their use for vapor deposition.Type: ApplicationFiled: July 26, 2019Publication date: December 2, 2021Inventors: Wolf SCHORN, Annika FREY, Eileen WÖRNER, Angelino DOPPIU, Ralf KARCH
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Publication number: 20210206790Abstract: The invention relates to compounds in accordance with the general formula [Ru(arene)(Ra—N?CR1—CR3?N—Rb)] or [Ru(arene)((Rc,Rd)N—N?CRH1—CRH3?N—N(Re,Rf))]. In this case, arene is selected from the group consisting of mononuclear and polynuclear arenes and heteroarenes. R1, R3, RH1, RH3 and Ra-Rf are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl radical. It further relates to methods for the production of these compounds, compounds obtainable according to these methods, their use and a substrate having on a surface thereof a ruthenium layer or a layer containing ruthenium. In addition, the invention relates to a method for producing compounds [Ru(arene)X2]2, wherein arene is selected from the group consisting of mononuclear and polynuclear arenes and X=halogen, compounds of this type obtainable according to this method, and their use.Type: ApplicationFiled: July 26, 2019Publication date: July 8, 2021Applicant: UMICORE AG & CO, KGInventors: Nicholas RAU, Jörg SUNDERMEYER, Henrik SCHUMANN, Andreas RIVAS NASS, Annika FREY, Wolf SCHORN, Eileen WOERNER, Ralf KARCH, Angelino DOPPIU
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Publication number: 20210163502Abstract: The invention relates to methods for the production of trialkylindium (InR3), wherein the production takes place in a reaction mixture that contains at least one alkylindium halide, a trialkylaluminum (AlR3), a carboxylate, and a solvent, wherein R is chosen independently of one another from C1-C4 alkyl, and X is chosen independently of one another from Cl, Br, and I.Type: ApplicationFiled: May 25, 2018Publication date: June 3, 2021Inventors: Wolf SCHORN, Ralf KARCH, Annika FREY, Angelino DOPPIU, Andreas RIVAS NASS, Eileen WOERNER
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Patent number: 10745421Abstract: The invention relates to a method for the cost-effective and environmentally friendly production of alkyl indium sesquichloride in high yield and with high selectivity and purity. The alkyl indium sesquichloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapour deposition (MOCVD) or metal organic vapour phase epitaxy (MOVPE). The novel method according to the invention is characterised by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.Type: GrantFiled: February 27, 2019Date of Patent: August 18, 2020Assignee: UMICORE AG & CO. KGInventors: Joerg Sundermeyer, Annika Frey, Wolf Schorn, Ralf Karch, Andreas Rivas-Nass, Eileen Woerner, Angelino Doppiu
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Patent number: 10428089Abstract: The invention relates to an improved process for inexpensive and environmentally benign preparation of trialkylgallium compounds of the general formula: R3Ga in high yield and selectivity, where R is alkyl of 1 to 4 carbon atoms. Trialkylgallium is prepared according to the invention via the intermediate stage alkylgallium dichloride (RGaCl2) or dialkylgallium chloride/alkylgallium dichloride mixture (R2GaCl/RGaCl2). The RGaCl2 obtained or the R2GaCl/RGaCl2 mixture also forms part of the subject-matter of the present invention. The novel process of the present invention is notable for improved process management. The process intentionally makes substantial use of inexpensive starting materials and reagents of low environmental impact and so is also useful for the industrial scale.Type: GrantFiled: March 12, 2015Date of Patent: October 1, 2019Assignee: Umicore AG & Co. KGInventors: Wolf Schorn, Jörg Sundermeyer, Annika Frey, Ralf Karch, Andreas Rivas-Nass, Eileen Woerner, Angelino Doppiu
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Publication number: 20190194229Abstract: The invention relates to a method for the cost-effective and environmentally friendly production of alkyl indium sesquichloride in high yield and with high selectivity and purity. The alkyl indium sesquichloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapour deposition (MOCVD) or metal organic vapour phase epitaxy (MOVPE). The novel method according to the invention is characterised by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.Type: ApplicationFiled: February 27, 2019Publication date: June 27, 2019Applicant: UMICORE AG & CO. KGInventors: Joerg SUNDERMEYER, Annika FREY, Wolf SCHORN, Ralf KARCH, Andreas RIVAS-NASS, Eileen WOERNER, Angelino DOPPIU
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Patent number: 10239892Abstract: The invention relates to a method for the cost-effective and environmentally friendly production of alkyl indium sesquichloride in high yield and with high selectivity and purity. The alkyl indium sesquichloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapor deposition (MOCVD) or metal organic vapor phase epitaxy (MOVPE). The novel method according to the invention is characterized by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.Type: GrantFiled: March 16, 2017Date of Patent: March 26, 2019Assignee: UMICORE AG & CO. KGInventors: Joerg Sundermeyer, Annika Frey, Wolf Schorn, Ralf Karch, Andreas Rivas-Nass, Eileen Woerner, Angelino Doppiu
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Publication number: 20170183361Abstract: The invention relates to a method for the cost-effective and environmentally friendly production of alkyl indium sesquichloride in high yield and with high selectivity and purity. The alkyl indium sesquichloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapour deposition (MOCVD) or metal organic vapour phase epitaxy (MOVPE). The novel method according to the invention is characterised by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.Type: ApplicationFiled: March 16, 2017Publication date: June 29, 2017Applicant: UMICORE AG & CO. KGInventors: Joerg SUNDERMEYER, Annika Frey, Wolf Schorn, Ralf Karch, Andreas Rivas-Nass, Eileen Woerner, Angelino Doppiu
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Patent number: 9617284Abstract: The invention relates to a method for the cost-effective and environmentally friendly production of alkyl indium sesquichloride in high yield and with high selectivity and purity. The alkyl indium sesquichloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapor deposition (MOCVD) or metal organic vapor phase epitaxy (MOVPE). The novel method according to the invention is characterized by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.Type: GrantFiled: August 18, 2014Date of Patent: April 11, 2017Assignee: Umicore AG & Co. KGInventors: Joerg Sundermeyer, Annika Frey, Wolf Schorn, Ralf Karch, Andreas Rivas-Nass, Eileen Woerner, Angelino Doppiu
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Publication number: 20170081344Abstract: The invention relates to an improved process for inexpensive and environmentally benign preparation of trialkylgallium compounds of the general formula: R3Ga in high yield and selectivity, where R is alkyl of 1 to 4 carbon atoms. Trialkylgallium is prepared according to the invention via the intermediate stage alkylgallium dichloride (RGaCl2) or dialkylgallium chloride/alkylgallium dichloride mixture (R2GaCl/RGaCl2). The RGaCl2 obtained or the R2GaCl/RGaCl2 mixture also forms part of the subject-matter of the present invention. The novel process of the present invention is notable for improved process management. The process intentionally makes substantial use of inexpensive starting materials and reagents of low environmental impact and so is also useful for the industrial scale.Type: ApplicationFiled: March 12, 2015Publication date: March 23, 2017Applicant: Umicore AG & Co. KGInventors: Wolf SCHORN, Jörg SUNDERMEYER, Annika FREY, Ralf KARCH, Andreas RIVAS-NASS, Eileen WOERNER, Angelino DOPPIU
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Patent number: 9540401Abstract: The invention relates to a method for the cost-effective and environmentally friendly production of dialkyl indium chloride in high yield and with high selectivity and purity. The dialkyl indium chloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapor deposition (MOCVD) or metal organic vapor phase epitaxy (MOVPE). The novel method according to the invention is characterized by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.Type: GrantFiled: August 18, 2014Date of Patent: January 10, 2017Assignee: UMICORE AG & CO. KGInventors: Joerg Sundermeyer, Annika Frey, Wolf Schorn, David Grosse-Hagenbrock, Ralf Karch, Andreas Rivas-Nass, Eileen Woerner, Angelino Doppiu
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Publication number: 20160207941Abstract: The invention relates to a method for the cost-effective and environmentally friendly production of dialkyl indium chloride in high yield and with high selectivity and purity. The dialkyl indium chloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapour deposition (MOCVD) or metal organic vapour phase epitaxy (MOVPE). The novel method according to the invention is characterised by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.Type: ApplicationFiled: August 18, 2014Publication date: July 21, 2016Applicant: UMICORE AG & CO. KGInventors: Joerg SUNDERMEYER, Annika FREY, Wolf SCHORN, David GROSSE-HAGENBROCK, Ralf KARCH, Andreas RIVAS-NASS, Eileen WOERNER, Angelino DOPPIU
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Publication number: 20160207942Abstract: The invention relates to a method for the cost-effective and environmentally friendly production of alkyl indium sesquichloride in high yield and with high selectivity and purity. The alkyl indium sesquichloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapour deposition (MOCVD) or metal organic vapour phase epitaxy (MOVPE). The novel method according to the invention is characterised by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.Type: ApplicationFiled: August 18, 2014Publication date: July 21, 2016Applicant: UMICORE AG & CO. KGInventors: Joerg Sundermeyer, Annika Frey, Wolf Schorn, Ralf Karch, Andreas Rivas-Nass, Eileen Woerner, Angelino Doppiu