Patents by Inventor Wolfgang Arndt

Wolfgang Arndt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5972724
    Abstract: The reduction of surface recombination is required for the manufacture of electronic devices made of silicon as well as for the application of various measurements and analytical methods for determining the purity of silicon. According to this invention, a process will be described for applying a laquer layer to the surface of silicon wafers, wherby the surface recombination velocity will be reduced to a value below 100 cm/s.
    Type: Grant
    Filed: September 12, 1995
    Date of Patent: October 26, 1999
    Assignee: Temic Telefunken microelectronic GmbH
    Inventors: Wolfgang Arndt, Klaus Graff, Alfons Hamberger, Petra Heim
  • Patent number: 5893549
    Abstract: Mirror support means having a metal block machined with a first pair of slots shaped to receive a first pair of curved mirrors and a second pair of slots shaped to receive a second pair of curved mirrors. The block is sufficiently resiliently deformable to enable the slots to be widened to receive the mirrors and then for the mirrors to be clamped in position, the slots being accurately machined so that the mirrors are bent into their required forms of curvature. The use of a unitary block simplifies the construction and setting up of the support means for the mirrors.
    Type: Grant
    Filed: November 27, 1996
    Date of Patent: April 13, 1999
    Assignee: Medical Research Council
    Inventors: Ladislav Pina, Adolf Inneman, Ulrich Wolfgang Arndt, David Keith Bowen
  • Patent number: 5424222
    Abstract: The method in accordance with the invention is characterized by the steps of before an ion implantation, a dielectric diffusing layer array is formed on a substrate that has at least one oxide layer and is thick enough for the maximum of implanted ions to be inside the layer array; and post-diffusion is implemented such that no further oxidation of the substrate is possible. By these measures, it is achieved that within the semiconductor substrate the doping continually decreases towards the pn-junction, apart from a very narrow segregation area, the result being an electrical field that conducts substantially all charge carriers generated in the area between the surface of the substrate and the pn-junction to this pn-junction. This achieves a quantum efficiency in the short-wave range that is considerably greater than that achievable with conventional photodetectors.
    Type: Grant
    Filed: February 15, 1994
    Date of Patent: June 13, 1995
    Assignee: Temic Telefunken microelectronic GmbH
    Inventor: Wolfgang Arndt
  • Patent number: 4110555
    Abstract: To connect one out of a plurality of peripheral units to a data bus, each unit is connected to two wires of an address matrix. When a unit wants to connect itself to the data bus, it applies a starting voltage to both wires. The central unit then searches in both matrix coordinates for the two wires of the starting-voltage-transmitting unit and connects the unit so found to the data bus by excitation via the wires.
    Type: Grant
    Filed: April 28, 1977
    Date of Patent: August 29, 1978
    Assignee: International Standard Electric Corporation
    Inventors: Bernhard Heine, Wolfgang Arndt, Hartmut Lower