Abstract: A process for manufacturing a silicon semiconductor device having a reduced surface recombination velocity of charge carriers within a silicon wafer includes forming a plurality of semiconductor zones in the surface; reducing surface recombination velocity of charge carriers within the silicon wafer by maintaining temperature below 100° C. while sequentially performing the steps of cleaning the surface to remove oxide; drying the surface by blowing a non-oxidizing gas thereon; directly applying a layer of lacquer onto the surface at a temperature below 100° C.; and drying the layer of lacquer at a temperature below 100° C. to generate an electrically non-conducting layer and reduce the surface recombination velocity of charge carriers within the silicon wafer in which the layer of lacquer contains halogen in a concentration of more than 0.1 volume %; and forming at least one conducting structure on the surface of the layer of lacquer.

Abstract: An X-ray generator comprises an evacuated and sealed X-ray tube, an electron gun, an X-ray target, an internal electron mask, and an X-ray window consisting of a thin tube of material with low X-ray absorption and high mechanical strength, for example beryllium. The window connects the tube to the target assembly containing the X-ray target. The generator preferably also includes a system for focusing and steering the electron beam onto the target, a cooling system to cool the target material, kinematic mounts to allow precise and repeatable mounting of X-ray devices for focusing the X-ray beam, and X-ray focusing devices of varying configurations and methods. The X-ray generator of the invention produces an X-ray source having a focal spot or line of very small dimensions and is capable of producing a high intensity X-ray beam at a relatively small point of application using a low operating power.

Abstract: The reduction of surface recombination is required for the manufacture of electronic devices made of silicon as well as for the application of various measurements and analytical methods for determining the purity of silicon. According to this invention, a process will be described for applying a laquer layer to the surface of silicon wafers, wherby the surface recombination velocity will be reduced to a value below 100 cm/s.

Abstract: Mirror support means having a metal block machined with a first pair of slots shaped to receive a first pair of curved mirrors and a second pair of slots shaped to receive a second pair of curved mirrors. The block is sufficiently resiliently deformable to enable the slots to be widened to receive the mirrors and then for the mirrors to be clamped in position, the slots being accurately machined so that the mirrors are bent into their required forms of curvature. The use of a unitary block simplifies the construction and setting up of the support means for the mirrors.

Abstract: The method in accordance with the invention is characterized by the steps of before an ion implantation, a dielectric diffusing layer array is formed on a substrate that has at least one oxide layer and is thick enough for the maximum of implanted ions to be inside the layer array; and post-diffusion is implemented such that no further oxidation of the substrate is possible. By these measures, it is achieved that within the semiconductor substrate the doping continually decreases towards the pn-junction, apart from a very narrow segregation area, the result being an electrical field that conducts substantially all charge carriers generated in the area between the surface of the substrate and the pn-junction to this pn-junction. This achieves a quantum efficiency in the short-wave range that is considerably greater than that achievable with conventional photodetectors.

Abstract: To connect one out of a plurality of peripheral units to a data bus, each unit is connected to two wires of an address matrix. When a unit wants to connect itself to the data bus, it applies a starting voltage to both wires. The central unit then searches in both matrix coordinates for the two wires of the starting-voltage-transmitting unit and connects the unit so found to the data bus by excitation via the wires.