Abstract: A method and protocol tester for decoding data for the performance of a measurement task, which data is encoded in accordance with a protocol description, includes modifying the protocol description with respect to the measurement task by compressing protocol elements that are of no relevance to the measurement task and decoding the encoded data according to the modified protocol description to provide only decoded data relevant to the measurement task. The decoded data may be filtered before further processing according to a filter condition determined by the measurement task. Alternatively the filter condition may be installed as part of the modified protocol description. Then additional filtering may be applied when there are further filter conditions determined by the measurement task. The result is a protocol tester that permanently stores the protocol description while allowing modification of the protocol description for each measurement task, reducing storage and calculation requirements.

Abstract: A decoding device for analyzing communication protocols has a generic decoder into which at least one protocol description of a communication protocol is loaded, the at least one protocol description being capable of being interpreted by the generic decoder. The decoding device also has a specific decoder designed for a certain protocol description. The generic and specific decoders are reversibly connected.

Abstract: A method for treating a surface on an SiC semiconductor body produced by epitaxy. According to the method, the parts of the epitactic layer that are deposited in the final phase of the epitaxy are removed by etching and a wet chemical treatment is then carried out in order to remove a thin natural oxide on the surface. Alternatively, a metal layer configured as a Schottky contact and/or as an ohmic contact can also be applied to the surface immediately after the removal process.

Abstract: A method and protocol tester for decoding data for the performance of a measurement task, which data is encoded in accordance with a protocol description, includes modifying the protocol description with respect to the measurement task by compressing protocol elements that are of no relevance to the measurement task and decoding the encoded data according to the modified protocol description to provide only decoded data relevant to the measurement task. The decoded data may be filtered before further processing according to a filter condition determined by the measurement task. Alternatively the filter condition may be installed as part of the modified protocol description. Then additional filtering may be applied when there are further filter conditions determined by the measurement task. The result is a protocol tester that permanently stores the protocol description while allowing modification of the protocol description for each measurement task, reducing storage and calculation requirements.

Abstract: A method for treating a surface on an SiC semiconductor body produced by epitaxy. According to the method, the parts of the epitactic layer that are deposited in the final phase of the epitaxy are removed by etching and a wet chemical treatment is then carried out in order to remove a thin natural oxide on the surface. Alternatively, a metal layer configured as a Schottky contact and/or as an ohmic contact can also be applied to the surface immediately after the removal process.

Abstract: The disclosed semiconductor device comprises an ohmic contact between a semiconductor region made of n-conducting silicon carbide and a largely homogeneous ohmic contact layer (110), which adjoins the semiconductor region and is made of a material having a first and a second material component. A silicide formed from the first material component and the silicon of the silicon carbide and a carbide formed from the second material component and the carbon of the silicon carbide are contained in a junction region between the semiconductor region and the ohmic contact layer. The silicide and carbide formation take place at maximum 1000° C.

Abstract: The semiconductor configuration is formed with a lateral channel region and an adjoining vertical channel region in an n-conductive first semiconductor region. When a predetermined saturation current is exceeded, the lateral channel region is pinched off and the current is limited to a value below the saturation current.

Abstract: A semiconductor product is described that contains a semiconducting body doped with a first conductivity type, a Schottky contact layer disposed on the semiconducting body and forms a Schottky contact with the semiconducting body, an ohmic contact layer disposed adjacent the Schottky contact layer, and a diode structure disposed laterally beside the Schottky contact. The diode structure has a first region disposed in the semiconducting body. The first region is doped with a second conductivity type and is connected to the Schottky contact layer through the ohmic contact layer. The diode structure has a second region functioning as part of an edge termination and surrounds the Schottky contact and the first region. The second region is disposed in the semiconducting body and is doped with the second conductivity type.

Abstract: A lateral silicon carbide junction field effect transistor has p-conductive and n-conductive silicon carbide layers. The layers are provided in pairs in lateral direction in a silicon carbide body. Trenches for a source, a drain and a gate extend from a principal surface of the silicon carbide body and penetrate the layers. The source and drain trenches are filled with silicon carbide of one conductivity type, whereas the trench for the gate is filled with silicon carbide of a conductivity type that is different from the source and the drain.

Abstract: A decoding device for analyzing communication protocols has a generic decoder into which at least one protocol description of a communication protocol is loaded, the at least one protocol description being capable of being interpreted by the generic decoder. The decoding device also has a specific decoder designed for a certain protocol description. The generic and specific decoders are reversibly connected.

Abstract: The disclosed semiconductor device comprises an ohmic contact between a semiconductor region made of n-conducting silicon carbide and a largely homogeneous ohmic contact layer (110), which adjoins the semiconductor region and is made of a material having a first and a second material component. A silicide formed from the first material component and the silicon of the silicon carbide and a carbide formed from the second material component and the carbon of the silicon carbide are contained in a junction region between the semiconductor region and the ohmic contact layer. The silicide and carbide formation take place at maximum 1000° C.

Abstract: A semiconductor configuration, in particular based on silicon carbide, is specified which rapidly limits a short-circuit current to an acceptable current value. For this purpose, when a predetermined saturation current is exceeded, a lateral channel region is pinched off, and the current is limited to a value below the saturation current.

Abstract: A device for limiting an alternating electric current includes a least one passive semiconductor configuration and a protection circuit. The semiconductor configuration is configured such that when a forward voltage is applied thereto, a forward current flows through the semiconductor configuration. The forward current increases monotonously with the forward voltage up to a saturation current at an associated saturation voltage. At a forward voltage above the saturation voltage, the forward current is limited to a limiting current that is smaller than the saturation current. The semiconductor configuration is further configured such that when a reverse voltage is applied, a reverse current flows through the passive semiconductor configuration.

Abstract: The invention concerns nitric acid esters of cyclohexanol of formula I ##STR1## in which A signifies a valency bond or a C.sub.1 -C.sub.6 -alkylene chain and B the group --NR.sup.1 --CO--Z, --NR.sup.1 --SO.sub.2 --Z or --CO--NR.sup.2 --Z, whereby R.sup.1 signifies hydrogen or a C.sub.1 -C.sub.6 -alkyl alkyl group R.sup.2 hydrogen, a hydroxyl, hydroxy-C.sub.1 -C.sub.6 -alkyl, C.sub.1 -C.sub.6 -alkoxy, C.sub.1 -C.sub.6 -alkyl, C.sub.2 -C.sub.6 -alkenyl or C.sub.2 -C.sub.6 -alkynyl group and Z signifies hydrogen a C.sub.1 -C.sub.6 -alkyl, C.sub.2 -C.sub.6 -alkenyl or C.sub.2 -C.sub.6 -alkynyl group which may optionally be substituted for the case that B is an --NR.sup.1 --CO--Z group, Z can also signify a C.sub.1 -C.sub.6 -alkoxy group.

Abstract: The present invention provides anti-angina pharmaceutical compositions containing at least one compound of the formula: ##STR1## wherein n is 1 or 2, R is a hydrogen atom or an H--(C.sub.1 -C.sub.8)-alkylene, hydroxy-(C.sub.1 -C.sub.8)-alkylene, R.sup.1 R.sup.2 N--(C.sub.1 -C.sub.8)-alkylene, R.sup.1 R.sup.2 N--(C.sub.1 -C.sub.8)-alkylene-CO--, R.sup.1 R.sup.2 N--CO--NR.sup.3 --(C.sub.1 -C.sub.8)-alkylene or R.sup.1 R.sup.2 N--CO-- radical, A is a valency bond or an --NR.sup.4 --CO-- or --CO-- NR.sup.4 -- radical, R.sup.4 is a hydrogen atom or a straight-chained or branched, saturated or unsaturated or cyclic alkyl radical containing up to 6 carbon atoms and B is a valency bond or a straight-chained or branched alkylene chain containing up to 8 carbon atoms, in which a --CH.sub.2 -- group can be replaced by a cycloalkylene radical containing 3 to 7 carbon atoms.

Abstract: The present invention provides pharmaceutical compositions effective against angina-like heart and circulatory diseases containing at least one nitroxyalkylamine derivative of the general formula: ##STR1## wherein R.sub.1 is a hydrogen atom, a lower-alkyl radical, a C.sub.3 -C.sub.8 -cycloalkyl or C.sub.3 -C.sub.8 -cycloalkenyl radical, an aminocarbonyl, C.sub.1 -C.sub.6 -mono- or di-alkylaminocarbonyl radical, R.sup.2 is a hydrogen atom, a lower-alkyl radical or a C.sub.3 -C.sub.8 -cycloalkyl or cycloalkenyl radical or R.sup.2, together with R.sup.1 and the nitrogen atom to which they are attached, form a heteroaliphatic ring containing up to 6 carbon atoms, A is a valency bond or a straight-chained or branched lower-alkylene radical, in which a --CH.sub.2 -- group can be replaced by a cycloalkylene radical, B is a lower-alkylene radical, in which a --CH.sub.2 -- group can be replaced by a cycloalkylene radical and X is an --NR.sup.3 --CO-- or --CO--NR.sup.3 -- radical, in which R.sup.

Abstract: The present invention provides anti-angina pharmaceutical compositions containing at least one compound of the formula: ##STR1## wherein n is 1 or 2, R is a hydrogen atom or an H-(C.sub.1 -C.sub.8)-alkylene, hydroxy-(C.sub.1 -C.sub.8)-alkylene, R.sup.1 R.sup.2 N-(C.sub.1 -C.sub.8)-alkylene, R.sup.1 R.sup.2 N-(C.sub.1 -C.sub.8)-alkylene-CO--, R.sup.1 R.sup.2 N-CO-NR.sup.3 -(C.sub.1 -C.sub.8)-alkylene or R.sup.1 R.sup.2 N-CO-- radical, A is a valency bond or an --NR.sup.4 --CO-- or --CO--NR.sup.4 -- radical, R.sup.4 is a hydrogen atom or a straight-chained or branched, saturated or unsaturated of cyclic alkyl radical containing up to 6 carbon atoms and B is a valency bond or a straight-chained or branched alkylene chain containing up to 8 carbon atoms, in which a --CH.sub.2 -- group can be replaced by a cycloalkylene radical containing 3 to 7 carbon atoms.

Abstract: The present invention provides compounds of the general formula: ##STR1## wherein Ar is a substituted or unsubstituted aromatic or heteroaromatic radical, A is a straight-chained or branched alkylene chain containing up to 8 carbon atoms, a --CH.sub.2 -- group of which can be replaced by a cycloalkylene radical containing 3 to 7 carbon atoms, B is a straight-chained mono- or bicyclic, optionally branched, saturated or unsaturated alkylene chain containing up to 12 carbon atoms, a --CH.sub.2 -- group of which can be replaced by a cycloalkylene radical containing 3 to 7 carbon atoms and/or up to two --CH.sub.2 -- groups of which can be replaced by an oxygen or a sulphur atom or by an --S(.dbd.O) or --S(.dbd.O).sub.2 group, X is a valency bond, an oxygen atom or an --NR.sup.1 group, in which R.sup.1 is a hydrogen atom or a straight-chained or branched, saturated or unsaturated alkyl or nitroxyalkyl radical containing up to 6 carbon atoms or R.sup.1, together with the nitrogen atom of the --NR.sup.

Abstract: The present invention provides oxindole derivatives of the formula: ##STR1## wherein the various substituents are defined hereinbelow. The above compounds display nitrate-like as well as .beta.-blocking actions.

Abstract: The present invention provides new aminopropanol derivatives of the general formula: ##STR1## wherein A is a direct bond, a straight-chained or branched alkylene chain containing up to 3 carbon atoms or a --CO--CH.sub.2 -- group; X is a direct bond or a carbonyl group; B is a straight-chained or branched, saturated or unsaturated alkylene chain containing up to 12 carbon atoms, in which one or two --CH.sub.2 -- groups can also be replaced by a saturated or unsaturated alkylene ring containing 3 to 7 carbon atoms and/or by an oxygen or sulphur atom or an --S(.dbd.O)-- or --S(.dbd.O).sub.2 -- group, n is 1, 2 or 3; R.sub.1 is a hydrogen atom or a straight-chained or branched, saturated or unsaturated alkyl radical containing up to 6 carbon atoms or a --B--(ONO.sub.2).sub.n group, in which B and n have the same meanings as above, or when A is a --CO--CH.sub.2 -- group and X is a direct bond, R.sub.