Abstract: The invention relates to a high-pass filter comprising a signal line with several capacitors connected in series as well as a ground line, wherein several inductors are connected between the signal line and the ground line. In order to configure the high-pass filter as a coaxial construction it is suggested in accordance with the invention that the signal line form an inner conductor and the ground line an outer conductor of a coaxial conductor, between which an insulation layer is arranged, and that the inductors be designed as discrete components which are arranged at a distance to one another and between which at least one impedor is connected.

Abstract: The invention relates to a high-pass filter comprising a signal line with several capacitors connected in series as well as a ground line, wherein several inductors are connected between the signal line and the ground line. In order to configure the high-pass filter as a coaxial construction it is suggested in accordance with the invention that the signal line form an inner conductor and the ground line an outer conductor of a coaxial conductor, between which an insulation layer is arranged, and that the inductors be designed as discrete components which are arranged at a distance to one another and between which at least one impedor is connected.

Abstract: The invention relates to an electrical socket with a housing, which has a space for inserting a connector and surrounds a contact module which comprises a number of electrical conductors and contact elements which can be contacted by associated plug contacts of the connector, two conductors respectively forming a pair of conductors.

Abstract: The invention relates to an electrical socket with a housing, which has a space for inserting a connector and surrounds a contact module which comprises a number of electrical conductors and contact elements which can be contacted by associated plug contacts of the connector, two conductors respectively forming a pair of conductors.

Abstract: The invention relates to an overvoltage arrester for high-frequency lines comprising a coaxial line section with an inner conductor and an outer conductor, and a short-circuit conductor which branches off from the inner conductor and is electrically connected to the outer conductor. In order to design the overvoltage arrester such that it enables transmission of a supply voltage in a constructionally simple way and ensures reliable protection against electromagnetic interference pulses, it is proposed, in accordance with the invention, that the short-circuit conductor be connected to the outer conductor solely via an arrester configured as a varistor, with the varistor forming the only discrete electrically active element between the short-circuit conductor and the outer conductor.

Abstract: A soldering jig made of plastic.

Abstract: An electrode centering and clamping device for producing diffused, contacted and surface passivated semiconductor chips for semiconductor devices, wherein after producing a semiconductor wafer with a given arrangement of layers and regions of different conductance and different conductivity types for a plurality of devices by doping with impurity forming elements, both of the major surfaces of the semiconductor wafer are provided with respective metal layers and output electrodes are applied to both of the metal layers for the plurality of devices with the output electrodes being of such a thickness and overlying such areas of the metal layers so that the thickness of the electrodes will still be sufficient for further processing after a subsequent separation of the wafer into the plurality of chips and the major surfaces of the chips after separation, are completely covered by the output electrodes.

Abstract: A method for producing diffused, contacted and surface passivated semiconductor chips for semiconductor devices, wherein after producing a semiconductor wafer with a given arrangement of layers and regions of different conductance and different conductivity types for a plurality of devices by doping with impurity forming elements, both of the major surfaces of the semiconductor wafer are provided with respective metal layers and output electrodes are applied to both of the metal layers for the plurality of devices with the output electrodes being of such a thickness and overlying such areas of the metal layers so that the thickness of the electrodes will still be sufficient for further processing after a subsequent separation of the wafer into the plurality of chips and the major surfaces of the chips after separation, are completely covered by the output electrodes.