Abstract: An electromagnetic wave sensor for determining an interstitial fluid parameter in vivo comprises an implantable housing, and a sensor component hermetically encapsulated within the implantable housing. The sensor component comprises an electromagnetic wave transmitter unit configured to emit an electromagnetic wave signal in a frequency range between 300 MHz and 3 THz penetrating the implantable housing and penetrating an interstitial fluid probe volume, an electromagnetic wave receiver unit configured to receive the electromagnetic wave signal modified by the interstitial fluid probe volume, and a transceiver unit configured to transmit radio frequency signals related to the electromagnetic wave signal modified by the interstitial fluid probe volume. A system for determining an interstitial fluid parameter in vivo comprises the electromagnetic wave sensor and an external reader.

Abstract: A communication arrangement may include a communication device, which may include an application processor, a mobile radio circuit, and a near-field communication (NFC) circuit configured according to an NFC technology for transmission of data and energy for operating a circuit external to the communication device. The arrangement may include a flexible carrier mounted detachably on the communication device. The carrier may include a radio circuit, an NFC circuit configured according to an NFC technology, a circuit coupled to the NFC circuit and the radio circuit, which is configured to be operated with energy which is received by means of the NFC circuit according to the NFC technology, the circuit configured for converting data coded in accordance with the NFC technology into data coded in accordance with the radio technology, or for converting data coded in accordance with the radio technology into data coded in accordance with the NFC technology.

Abstract: An electromagnetic wave sensor for determining an interstitial fluid parameter in vivo comprises an implantable housing, and a sensor component hermetically encapsulated within the implantable housing. The sensor component comprises an electromagnetic wave transmitter unit configured to emit an electromagnetic wave signal in a frequency range between 300 MHz and 3 THz penetrating the implantable housing and penetrating an interstitial fluid probe volume, an electromagnetic wave receiver unit configured to receive the electromagnetic wave signal modified by the interstitial fluid probe volume, and a transceiver unit con-figured to transmit radio frequency signals related to the electromagnetic wave signal modified by the interstitial fluid probe volume. A system for determining an interstitial fluid parameter in vivo comprises the electromagnetic wave sensor and an external reader.

Abstract: A communication arrangement may include a communication device, which may include an application processor, a mobile radio circuit, and a near-field communication (NFC) circuit configured according to an NFC technology for transmission of data and energy for operating a circuit external to the communication device. The arrangement may include a flexible carrier mounted detachably on the communication device. The carrier may include a radio circuit, an NFC circuit configured according to an NFC technology, a circuit coupled to the NFC circuit and the radio circuit, which is configured to be operated with energy which is received by means of the NFC circuit according to the NFC technology, the circuit configured for converting data coded in accordance with the NFC technology into data coded in accordance with the radio technology, or for converting data coded in accordance with the radio technology into data coded in accordance with the NFC technology.

Abstract: A set of at least two masks for the projection of structure patterns coordinated with one another by a projection system into the same photosensitive layer of a semiconductor wafer, in which the set of at least two masks includes a primary mask having an opaque structure element, which is formed at a first position on the first mask. A second mask of the set, for example a trimming mask, which is assigned to the first mask, can have a semitransparent region assigned to the structure element of the first mask. The semitransparent region can be formed at the same position on the second mask as the opaque structure element on the first mask. With the aid of the suitable choice of the transparency of the semitransparent region, it is possible to enable an undesirable resist region to be trimmed away for enlargement of a process window during exposure of the photosensitive layer on the semiconductor wafer.

Abstract: A set of at least two masks, coordinated with one another, for the projection of structure patterns, into the same photosensitive layer arranged on a semiconductor wafer. The first mask includes a semitransparent or nontransparent first layer, which is arranged on a first substrate and in which at least one first opening is formed at a first position, the first opening having a first lateral dimension, which is greater than the resolution limit of a projection system for the projection of the structure patterns. The second mask includes a semitransparent or nontransparent second layer, which is arranged on a second substrate and in which at least one dummy structure assigned to the first opening is formed at a second position, the dummy structure having a second lateral dimension, which is smaller than the resolution limit of the projection system wherein the first position on the first mask corresponds to the second position on the second mask.

Abstract: The invention relates to a method for inspection of periodic structures on lithography masks using a microscope with adjustable illumination and an operating element for movement of a mechanical stage with the lithography mask attached to it in order to record images of the lithography mask at a computer-controlled location on the lithography mask. The position, the size and the pitch specification of the lithography mask are stored.

Abstract: A mask, and in particular a phase shift product mask, utilizes predetermined defects being produced during the fabrication thereof in the so-called “second layer” process. The defects are identified by markers in their direct vicinity. The markers are quadrangular and indicate, by virtue of their number in combination with their configuration, information about the respectively assigned defect, such as, for example, defect type, defect size, etc.

Abstract: A set of at least two masks for the projection of structure patterns, coordinated with one another, by a projection system into the same photosensitive layer of a semiconductor wafer can include a second mask.

Abstract: A set of at least two masks for the projection of structure patterns coordinated with one another by a projection system into the same photosensitive layer of a semiconductor wafer can include a primary mask having an opaque structure element, which is formed at a first position on the first mask. A second mask of the set, for example a trimming mask, which is assigned to the first mask, can have a semitransparent region assigned to the structure element of the first mask. The semitransparent region can be formed at the same position on the second mask as the opaque structure element on the first mask. With the aid of the suitable choice of the transparency of the semitransparent region, it is possible to enable an undesirable resist region to be trimmed away with an enlargement of the process window during the exposure of the semiconductor wafer.

Abstract: The invention relates to a method for inspection of periodic structures on lithography masks using a microscope with adjustable illumination and an operating element for movement of a mechanical stage with the lithography mask attached to it in order to record images of the lithography mask at a computer-controlled location on the lithography mask. The position, the size and the pitch specification of the lithography mask are stored.

Abstract: A mask, and in particular a phase shift product mask, utilizes predetermined defects being produced during the fabrication thereof in the so-called “second layer” process. The defects are identified by markers in their direct vicinity. The markers are quadrangular and indicate, by virtue of their number in combination with their configuration, information about the respectively assigned defect, such as, for example, defect type, defect size, etc.