Abstract: A method textures at least one portion of a surface of a semiconductor material, according to which the at least one portion of the surface is brought into contact with an etching solution. The portion of the surface is electrically conductively connected to a plus pole of a current source and is used as a positive electrode. A negative electrode located in the etching solution is electrically conductively connected to a minus pole of the current source and electric current is carried from the plus pole to the minus pole and the at least one portion of the surface is thus electrochemically etched. A device is provided for carrying out the method.

Abstract: A continuous separation installation for the galvanic deposition of a substance on objects includes contacting devices having at least one electrically conductive contact arm. The contacting devices are arranged in areas of the continuous separation installation which are free from an electrolyte used for the galvanic deposition of the substance. There is also described an assembly for a continuous separation installation.